GB1340353A - Cold-cathode and method of manufacturing same - Google Patents

Cold-cathode and method of manufacturing same

Info

Publication number
GB1340353A
GB1340353A GB2380671A GB2380671A GB1340353A GB 1340353 A GB1340353 A GB 1340353A GB 2380671 A GB2380671 A GB 2380671A GB 2380671 A GB2380671 A GB 2380671A GB 1340353 A GB1340353 A GB 1340353A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
porous
sio
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2380671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1340353A publication Critical patent/GB1340353A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type

Abstract

1340353 Cathode materials and processing PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 19 April 1971 [14 March 1970] 23806/71 Heading H1D A cold cathode comprises a first conductive layer 2; an insulating layer with thick and thin regions, the thin regions being not more than 50Ám wide and formed of a compact layer 7 and a thicker porous layer 9; a discontinuous metal layer 12 on the porous layer with some of the metal 11 diffused into the porous layer and a second conductive layer 4 on the thick regions. The metal 11, 12 is gold and the diffused portions form field emission regions. The cathode comprises a glass substrate 1, layers 2, 3, 4, 8 of Al, SiO 2 , Al and Al 2 O 3 and in an etched hole, layers 7, 9, 12 of dense Al 2 O 3 , porous Al 2 O 3 containing needle shaped Au deposits 11 and Au. The cathode is prepared by vapour depositing the Al layer 2 on the substrate, sputtering on a layer of SiO 2 and adding an Al layer. A matrix of holes in layers 3, 4 are etched using a photo-resist method or ion bombardment and the assembly oxidized to form dense layers 7, 8. A porous Al 2 O 3 layer 9 is deposited electrolytically from an organic acid solution and the Au vapour deposited. The assembly is then heated in vacuum at 300‹ C. with a potential between layers 2, 4 causing some Au to diffuse into layer 9. In another embodiment used in an image intensifier the Al layer 2 is replaced by transparent SnO 2 and photo-conductive layers and dense and porous SiO 2 layers deposited by sputtering in holes in a SiO 2 . The continuous electrodes 2, 4 may be replaced by crossed conductor arrays.
GB2380671A 1970-03-14 1971-04-19 Cold-cathode and method of manufacturing same Expired GB1340353A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702012192 DE2012192A1 (en) 1970-03-14 1970-03-14 Electrical discharge tubes with a cathode consisting of an insulating layer lying between two conductive layers, and a method for producing a cathode intended for such a discharge tube

Publications (1)

Publication Number Publication Date
GB1340353A true GB1340353A (en) 1973-12-12

Family

ID=5765098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2380671A Expired GB1340353A (en) 1970-03-14 1971-04-19 Cold-cathode and method of manufacturing same

Country Status (6)

Country Link
JP (1) JPS5224829B1 (en)
CA (1) CA937977A (en)
DE (1) DE2012192A1 (en)
FR (1) FR2084551A5 (en)
GB (1) GB1340353A (en)
NL (1) NL7103154A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2235819A (en) * 1989-08-12 1991-03-13 Cathodeon Ltd Gas discharge display device
GB2304989A (en) * 1995-08-04 1997-03-26 Richard Allan Tuck Field electron emission materials and devices
EP0874384A1 (en) * 1997-03-25 1998-10-28 Pioneer Electronic Corporation Electron emission device and display device using the same
GB2330687A (en) * 1997-10-22 1999-04-28 Printable Field Emitters Ltd Field emission devices
EP0986084A2 (en) * 1998-09-11 2000-03-15 Pioneer Corporation Electron emission device and display apparatus using the same
EP1271594A1 (en) * 2001-06-29 2003-01-02 Canon Kabushiki Kaisha Electron-emitting device, electron source, and image-forming apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5442193A (en) * 1994-02-22 1995-08-15 Motorola Microelectronic field emission device with breakdown inhibiting insulated gate electrode
JP3874396B2 (en) * 2000-01-13 2007-01-31 パイオニア株式会社 ELECTRON EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE USING ELECTRON EMITTING ELEMENT
JP4253416B2 (en) * 2000-01-14 2009-04-15 パイオニア株式会社 Imaging device using electron-emitting device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2235819A (en) * 1989-08-12 1991-03-13 Cathodeon Ltd Gas discharge display device
GB2304989A (en) * 1995-08-04 1997-03-26 Richard Allan Tuck Field electron emission materials and devices
GB2304989B (en) * 1995-08-04 1997-09-03 Richard Allan Tuck Field electron emission materials and devices
EP0874384A1 (en) * 1997-03-25 1998-10-28 Pioneer Electronic Corporation Electron emission device and display device using the same
GB2330687A (en) * 1997-10-22 1999-04-28 Printable Field Emitters Ltd Field emission devices
GB2330687B (en) * 1997-10-22 1999-09-29 Printable Field Emitters Ltd Field emission devices
EP0986084A2 (en) * 1998-09-11 2000-03-15 Pioneer Corporation Electron emission device and display apparatus using the same
EP0986084A3 (en) * 1998-09-11 2004-01-21 Pioneer Corporation Electron emission device and display apparatus using the same
EP1271594A1 (en) * 2001-06-29 2003-01-02 Canon Kabushiki Kaisha Electron-emitting device, electron source, and image-forming apparatus
US7276843B2 (en) 2001-06-29 2007-10-02 Canon Kabushiki Kaisha Electron-emitting device with electron blocking layer, electron source, and image-forming apparatus

Also Published As

Publication number Publication date
NL7103154A (en) 1971-09-16
DE2012192A1 (en) 1971-10-07
CA937977A (en) 1973-12-04
JPS5224829B1 (en) 1977-07-04
FR2084551A5 (en) 1971-12-17

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee