JPS6454692A - Thin film el element - Google Patents

Thin film el element

Info

Publication number
JPS6454692A
JPS6454692A JP62212411A JP21241187A JPS6454692A JP S6454692 A JPS6454692 A JP S6454692A JP 62212411 A JP62212411 A JP 62212411A JP 21241187 A JP21241187 A JP 21241187A JP S6454692 A JPS6454692 A JP S6454692A
Authority
JP
Japan
Prior art keywords
back plate
small amount
electrode
ta2o5
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62212411A
Other languages
Japanese (ja)
Inventor
Hiroshi Washimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP62212411A priority Critical patent/JPS6454692A/en
Publication of JPS6454692A publication Critical patent/JPS6454692A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To restrict transformation of Sn at low temperatures and prevent the function as a back plate from deteriorating by forming the back plate with Sn containing a small amount of time-constant additive. CONSTITUTION:An EL panel is obtained by forming layers with electron beam deposition or the like on a transparent glass substrate 1 with said layers comprising: a transparent electrode 3 made of ITO, an insulation layer 4 made of Al2O3 and Ta2O5, a luminescent layer 5 made of ZnS doped with Mn, an insulation layer 6 made of Y2O3 and Ta2O5, and a back plate 7 made of Sn added with a small amount of additive. The back plate 7 is constituted with Sn containing at least one element out of Bi, Sb, Pb, Au, Cd, Ag, As, and In by a small amount. As a result, the electrode 7 is prevented from deteriorating due to transformation even if dielectric breakdown occurs between the electrodes 3 and 7 as the electrode comes to a self-restoring type breakdown mode without expanding a breakdown point.
JP62212411A 1987-08-25 1987-08-25 Thin film el element Pending JPS6454692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62212411A JPS6454692A (en) 1987-08-25 1987-08-25 Thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62212411A JPS6454692A (en) 1987-08-25 1987-08-25 Thin film el element

Publications (1)

Publication Number Publication Date
JPS6454692A true JPS6454692A (en) 1989-03-02

Family

ID=16622141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62212411A Pending JPS6454692A (en) 1987-08-25 1987-08-25 Thin film el element

Country Status (1)

Country Link
JP (1) JPS6454692A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994003032A1 (en) * 1992-07-23 1994-02-03 Idemitsu Kosan Co., Ltd. Organic el device
US5404075A (en) * 1991-12-26 1995-04-04 Kabushiki Kaisha Toyota Chuo Kenkyusho TFEL element with tantalum oxide and tungsten oxide insulating layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404075A (en) * 1991-12-26 1995-04-04 Kabushiki Kaisha Toyota Chuo Kenkyusho TFEL element with tantalum oxide and tungsten oxide insulating layer
WO1994003032A1 (en) * 1992-07-23 1994-02-03 Idemitsu Kosan Co., Ltd. Organic el device
US5500568A (en) * 1992-07-23 1996-03-19 Idemitsu Kosan Co., Ltd. Organic El device

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