GB1446592A - Dynode structures - Google Patents

Dynode structures

Info

Publication number
GB1446592A
GB1446592A GB116673*[A GB116673A GB1446592A GB 1446592 A GB1446592 A GB 1446592A GB 116673 A GB116673 A GB 116673A GB 1446592 A GB1446592 A GB 1446592A
Authority
GB
United Kingdom
Prior art keywords
thick
electrons
layer
light
acceptors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB116673*[A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne UK Ltd
Original Assignee
English Electric Valve Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by English Electric Valve Co Ltd filed Critical English Electric Valve Co Ltd
Priority to GB116673*[A priority Critical patent/GB1446592A/en
Priority to US431787A priority patent/US3910803A/en
Publication of GB1446592A publication Critical patent/GB1446592A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/10—Dynodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Led Devices (AREA)

Abstract

1446592 Electrode materials and processing ENGLISH ELECTRIC VALVE CO Ltd 11 Dec 1973 [9 Jan 1973] 38570/72 Heading H1D A method of producing a dynode structure, defined as emitting electrons in response to incident light, or electrons as in a multiplier, and having a thin active area 2 (e.g. 5 Á thick) of GaAs, includes etching a relatively thick body 1 of GaAs (e.g. 100 Á thick) to produce the thin active area surrounded by an integral thick frame 3. Preferably the body is rotated and inclined in a liquid etchant. Etching solutions, process details and masking materials are detailed. Area 2 is preferably coated with a Cs compound (e.g. caesium oxide), and the other face on which light or electrons impede may have a surface layer to increase the work function, e.g. a P<SP>+</SP> layer 9, ¢ to 1 Á thick, doped with Zn, Si or Ge. The body may contain 10<SP>16</SP> to 5 Î 10<SP>18</SP> acceptors/cc., the P<SP>+</SP> layer 10<SP>20</SP> acceptors/cc. In an electron tube, at least the Cs oxide surface is in a vacuum for light incidence, both surfaces being in the vacuum for electron incidence.
GB116673*[A 1973-01-09 1973-01-09 Dynode structures Expired GB1446592A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB116673*[A GB1446592A (en) 1973-01-09 1973-01-09 Dynode structures
US431787A US3910803A (en) 1973-01-09 1974-01-08 Method of producing dynode structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB116673*[A GB1446592A (en) 1973-01-09 1973-01-09 Dynode structures

Publications (1)

Publication Number Publication Date
GB1446592A true GB1446592A (en) 1976-08-18

Family

ID=9717327

Family Applications (1)

Application Number Title Priority Date Filing Date
GB116673*[A Expired GB1446592A (en) 1973-01-09 1973-01-09 Dynode structures

Country Status (2)

Country Link
US (1) US3910803A (en)
GB (1) GB1446592A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170648A (en) * 1985-02-01 1986-08-06 Raytheon Co Secondary emission cathode

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507386A1 (en) * 1981-06-03 1982-12-10 Labo Electronique Physique SEMICONDUCTOR DEVICE, ELECTRON TRANSMITTER, WITH ACTIVE LAYER HAVING A DOPING GRADIENT
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
GB1037199A (en) * 1964-07-14 1966-07-27 Standard Telephones Cables Ltd Improvements in or relating to transistor manufacture
US3713912A (en) * 1971-02-11 1973-01-30 Bell Telephone Labor Inc Gallium arsenide field effect structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170648A (en) * 1985-02-01 1986-08-06 Raytheon Co Secondary emission cathode
US4677342A (en) * 1985-02-01 1987-06-30 Raytheon Company Semiconductor secondary emission cathode and tube
GB2170648B (en) * 1985-02-01 1989-07-26 Raytheon Co Crossed-field tube

Also Published As

Publication number Publication date
US3910803A (en) 1975-10-07

Similar Documents

Publication Publication Date Title
GB1536412A (en) Photocathodes
EP0202637A3 (en) Uv photocathode
GB1417032A (en) Cold cathode field electron emitting devices
GB1142262A (en) Improvements in or relating to cathode ray tubes
GB1252290A (en)
GB1081829A (en) Electron multipliers
US3525679A (en) Method of electrodepositing luminescent material on insulating substrate
GB1503875A (en) Electron emissive electrode including porous antimony
GB1170678A (en) A Method of Etching a Film of Silicon Nitride
JPS57130490A (en) Semiconductor laser device
GB1446592A (en) Dynode structures
GB1015002A (en) Improvements in or relating to photosensitive electron emission device
US4019082A (en) Electron emitting device and method of making the same
GB1340353A (en) Cold-cathode and method of manufacturing same
GB1390105A (en) Gas discharge display device and a method for fabricating the same
GB1207091A (en) Method of manufacturing and electronic discharge tube including a photocathode
GB1297563A (en)
GB1024897A (en) Improvements in or relating to cold emission cathodes
GB1589874A (en) Electron multiplier devices
GB984936A (en) Electron discharge device including a photoemissive layer
GB1407156A (en) Device for converting an acoustic pattern into a visual image
GB1154062A (en) The Etching of Aluminium.
GB1605142A (en) Luminescent screen devices
US3873872A (en) Pyroelectric vidicon
GB1173989A (en) Improvements in or relating to Electron Image Storage and Display Devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee