JPS6451670A - Manufacture of amorphous semiconductor device - Google Patents

Manufacture of amorphous semiconductor device

Info

Publication number
JPS6451670A
JPS6451670A JP62208433A JP20843387A JPS6451670A JP S6451670 A JPS6451670 A JP S6451670A JP 62208433 A JP62208433 A JP 62208433A JP 20843387 A JP20843387 A JP 20843387A JP S6451670 A JPS6451670 A JP S6451670A
Authority
JP
Japan
Prior art keywords
electrode
metal layer
layer
metal
amorphous semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62208433A
Other languages
Japanese (ja)
Other versions
JP2590918B2 (en
Inventor
Takashi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62208433A priority Critical patent/JP2590918B2/en
Publication of JPS6451670A publication Critical patent/JPS6451670A/en
Application granted granted Critical
Publication of JP2590918B2 publication Critical patent/JP2590918B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce the number of processes, and decrease the manufacturing cost, by spreading a metal layer on an amorphous semiconductor layer formed on an insulating substrate via a first electrode, and forming a second electrode by dividing said metal layer by electrochemical machining. CONSTITUTION:On a glass substrate 1, is formed a first electrode 2 which is transparent and conductive, and thereon, an amorphous semiconductor layer 3 having a PIN junction is arranged. In order to divide a metal electrode layer of semiconductor element formed in thickness of 1mum on the layer 3 by vapor deposition or sputtering, a processing electrode 5 surrounded by an insulator 6 is arranged at a position facing the part to be divided. From a nozzle 7, electrolytic solution 8 is supplied between the processing electrode 5 and the metal layer 4. By applying a voltage to the metal layer 4 and the processing electrode 5 in the manner in which the metal layer becomes positive, the metal electrode is subjected to solvent reaction with a speed proportional to the current quantity, and the metal layer of the part to be divided is very simply eliminated.
JP62208433A 1987-08-22 1987-08-22 Manufacturing method of amorphous semiconductor device Expired - Fee Related JP2590918B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208433A JP2590918B2 (en) 1987-08-22 1987-08-22 Manufacturing method of amorphous semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208433A JP2590918B2 (en) 1987-08-22 1987-08-22 Manufacturing method of amorphous semiconductor device

Publications (2)

Publication Number Publication Date
JPS6451670A true JPS6451670A (en) 1989-02-27
JP2590918B2 JP2590918B2 (en) 1997-03-19

Family

ID=16556130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208433A Expired - Fee Related JP2590918B2 (en) 1987-08-22 1987-08-22 Manufacturing method of amorphous semiconductor device

Country Status (1)

Country Link
JP (1) JP2590918B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0394476A (en) * 1989-06-16 1991-04-19 Canon Inc Manufacture of substrate for selective crystal growth and selective crystal growth method and manufacture of solar cell by using these substrates
JP2006229188A (en) * 2005-01-18 2006-08-31 Shinko Electric Ind Co Ltd Processing method and equipment for conductive thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214584A (en) * 1985-03-15 1986-09-24 アトランテイツク・リツチフイールド・カンパニー Method of forming part of solar battery by inscribing thin film of material wilded on substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214584A (en) * 1985-03-15 1986-09-24 アトランテイツク・リツチフイールド・カンパニー Method of forming part of solar battery by inscribing thin film of material wilded on substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0394476A (en) * 1989-06-16 1991-04-19 Canon Inc Manufacture of substrate for selective crystal growth and selective crystal growth method and manufacture of solar cell by using these substrates
JP2006229188A (en) * 2005-01-18 2006-08-31 Shinko Electric Ind Co Ltd Processing method and equipment for conductive thin film

Also Published As

Publication number Publication date
JP2590918B2 (en) 1997-03-19

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees