GB1301702A - - Google Patents
Info
- Publication number
- GB1301702A GB1301702A GB317970A GB317970A GB1301702A GB 1301702 A GB1301702 A GB 1301702A GB 317970 A GB317970 A GB 317970A GB 317970 A GB317970 A GB 317970A GB 1301702 A GB1301702 A GB 1301702A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- recess
- etching
- film
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1301702 Semi-conductor devices KOGYO GIJUTSUIN 22 Jan 1970 [27 Jan 1969 (2) 1 Dec 1969] 3179/70 Heading H1K An I.G.F.E.T. is formed from a wafer 7 by producing regions 8 and 9 by double diffusion to form an NPN structure, etching a recess into the wafer, growing an insulating film 4 on the walls of the recess, and forming a conductive layer, 5, on the film 4. The layer 5 forms the gate electrode, region 9 the source region, region 8 adjacent the film 4 the channel region, and 7 the drain region. The length of the channel, L, is determined by the thickness of region 8 and the etching angle of the recess. The thickness of region 8 may be accurately controlled by the diffusion processes to be less than 1 Á. A further, thicker insulating film 6 may be formed on the region 9 surface, prior to etching, in order to reduce the gate to source capacitance.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP526969 | 1969-01-27 | ||
JP526869 | 1969-01-27 | ||
JP9572269 | 1969-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1301702A true GB1301702A (en) | 1973-01-04 |
Family
ID=27276681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB317970A Expired GB1301702A (en) | 1969-01-27 | 1970-01-22 |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2003558A1 (en) |
GB (1) | GB1301702A (en) |
NL (1) | NL7001150A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2904769A1 (en) * | 1978-02-17 | 1979-08-23 | Siliconix Inc | METHOD OF MANUFACTURING A V-NUT-MOS FIELD EFFECT TRANSISTOR AND TRANSISTOR OF THIS TYPE |
GB2129216A (en) * | 1982-10-12 | 1984-05-10 | Secr Defence | Field effect transistors |
-
1970
- 1970-01-22 GB GB317970A patent/GB1301702A/en not_active Expired
- 1970-01-27 NL NL7001150A patent/NL7001150A/xx unknown
- 1970-01-27 DE DE19702003558 patent/DE2003558A1/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2904769A1 (en) * | 1978-02-17 | 1979-08-23 | Siliconix Inc | METHOD OF MANUFACTURING A V-NUT-MOS FIELD EFFECT TRANSISTOR AND TRANSISTOR OF THIS TYPE |
FR2417855A1 (en) * | 1978-02-17 | 1979-09-14 | Siliconix Inc | FIELD-EFFECT TRANSISTOR AND ITS EMBODIMENT PROCESS |
GB2129216A (en) * | 1982-10-12 | 1984-05-10 | Secr Defence | Field effect transistors |
Also Published As
Publication number | Publication date |
---|---|
DE2003558A1 (en) | 1970-07-30 |
NL7001150A (en) | 1970-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |