GB1301702A - - Google Patents

Info

Publication number
GB1301702A
GB1301702A GB317970A GB317970A GB1301702A GB 1301702 A GB1301702 A GB 1301702A GB 317970 A GB317970 A GB 317970A GB 317970 A GB317970 A GB 317970A GB 1301702 A GB1301702 A GB 1301702A
Authority
GB
United Kingdom
Prior art keywords
region
recess
etching
film
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB317970A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1301702A publication Critical patent/GB1301702A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1301702 Semi-conductor devices KOGYO GIJUTSUIN 22 Jan 1970 [27 Jan 1969 (2) 1 Dec 1969] 3179/70 Heading H1K An I.G.F.E.T. is formed from a wafer 7 by producing regions 8 and 9 by double diffusion to form an NPN structure, etching a recess into the wafer, growing an insulating film 4 on the walls of the recess, and forming a conductive layer, 5, on the film 4. The layer 5 forms the gate electrode, region 9 the source region, region 8 adjacent the film 4 the channel region, and 7 the drain region. The length of the channel, L, is determined by the thickness of region 8 and the etching angle of the recess. The thickness of region 8 may be accurately controlled by the diffusion processes to be less than 1 Á. A further, thicker insulating film 6 may be formed on the region 9 surface, prior to etching, in order to reduce the gate to source capacitance.
GB317970A 1969-01-27 1970-01-22 Expired GB1301702A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP526969 1969-01-27
JP526869 1969-01-27
JP9572269 1969-12-01

Publications (1)

Publication Number Publication Date
GB1301702A true GB1301702A (en) 1973-01-04

Family

ID=27276681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB317970A Expired GB1301702A (en) 1969-01-27 1970-01-22

Country Status (3)

Country Link
DE (1) DE2003558A1 (en)
GB (1) GB1301702A (en)
NL (1) NL7001150A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904769A1 (en) * 1978-02-17 1979-08-23 Siliconix Inc METHOD OF MANUFACTURING A V-NUT-MOS FIELD EFFECT TRANSISTOR AND TRANSISTOR OF THIS TYPE
GB2129216A (en) * 1982-10-12 1984-05-10 Secr Defence Field effect transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904769A1 (en) * 1978-02-17 1979-08-23 Siliconix Inc METHOD OF MANUFACTURING A V-NUT-MOS FIELD EFFECT TRANSISTOR AND TRANSISTOR OF THIS TYPE
FR2417855A1 (en) * 1978-02-17 1979-09-14 Siliconix Inc FIELD-EFFECT TRANSISTOR AND ITS EMBODIMENT PROCESS
GB2129216A (en) * 1982-10-12 1984-05-10 Secr Defence Field effect transistors

Also Published As

Publication number Publication date
DE2003558A1 (en) 1970-07-30
NL7001150A (en) 1970-07-29

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee