JPS5380A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5380A
JPS5380A JP7481876A JP7481876A JPS5380A JP S5380 A JPS5380 A JP S5380A JP 7481876 A JP7481876 A JP 7481876A JP 7481876 A JP7481876 A JP 7481876A JP S5380 A JPS5380 A JP S5380A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
formation
protective fet
increaing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7481876A
Other languages
Japanese (ja)
Inventor
Yoshihiro Osada
Akihiro Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7481876A priority Critical patent/JPS5380A/en
Publication of JPS5380A publication Critical patent/JPS5380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To have formation of a protective FET without increaing manufacturing processes by etching the gate insulation film for protective FET into a prescribed thickness simultaneously with the contact hole formation to the diffusion layer.
JP7481876A 1976-06-23 1976-06-23 Manufacture of semiconductor device Pending JPS5380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7481876A JPS5380A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7481876A JPS5380A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5380A true JPS5380A (en) 1978-01-05

Family

ID=13558265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7481876A Pending JPS5380A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5380A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
JPH07505004A (en) * 1993-03-31 1995-06-01 サムソン　エレクトロニクス　カンパニー　リミテッド Monitor power saving device and method
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode
JP2021156865A (en) * 2020-03-26 2021-10-07 株式会社神戸製鋼所 Dismantling method of heat exchanger

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128653A (en) * 1983-12-16 1985-07-09 Hitachi Ltd Semiconductor integrated circuit device
JPH0530073B2 (en) * 1983-12-16 1993-05-07 Hitachi Ltd
US5475245A (en) * 1992-03-23 1995-12-12 Rohm Co., Ltd. Field-effect voltage regulator diode
JPH07505004A (en) * 1993-03-31 1995-06-01 サムソン　エレクトロニクス　カンパニー　リミテッド Monitor power saving device and method
JP2021156865A (en) * 2020-03-26 2021-10-07 株式会社神戸製鋼所 Dismantling method of heat exchanger

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