DK131253B - Integrated capacitor storage. - Google Patents

Integrated capacitor storage.

Info

Publication number
DK131253B
DK131253B DK214469A DK214469A DK131253B DK 131253 B DK131253 B DK 131253B DK 214469 A DK214469 A DK 214469A DK 214469 A DK214469 A DK 214469A DK 131253 B DK131253 B DK 131253B
Authority
DK
Denmark
Prior art keywords
capacitor storage
integrated capacitor
integrated
storage
capacitor
Prior art date
Application number
DK214469A
Other languages
Danish (da)
Other versions
DK131253C (en
Inventor
C Mulder
F L J Sangster
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK131253B publication Critical patent/DK131253B/en
Application granted granted Critical
Publication of DK131253C publication Critical patent/DK131253C/da

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DK214469A 1968-04-23 1969-04-18 Integrated capacitor storage. DK131253B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.

Publications (2)

Publication Number Publication Date
DK131253B true DK131253B (en) 1975-06-16
DK131253C DK131253C (en) 1975-11-17

Family

ID=19803412

Family Applications (1)

Application Number Title Priority Date Filing Date
DK214469A DK131253B (en) 1968-04-23 1969-04-18 Integrated capacitor storage.

Country Status (11)

Country Link
JP (1) JPS509515B1 (en)
AT (1) AT301908B (en)
BE (1) BE731974A (en)
CH (1) CH511496A (en)
DE (2) DE1919507C3 (en)
DK (1) DK131253B (en)
ES (2) ES366285A1 (en)
FR (1) FR2011816A1 (en)
GB (2) GB1271154A (en)
NL (1) NL162500C (en)
SE (1) SE386299B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574629B2 (en) * 2008-08-01 2013-11-05 Anteis S.A. Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
NL162500C (en) 1980-05-16
DE1966847A1 (en) 1974-09-19
DE1919507B2 (en) 1979-12-06
NL6805704A (en) 1969-10-27
DK131253C (en) 1975-11-17
DE1919507A1 (en) 1969-11-20
ES386979A1 (en) 1973-12-01
ES366285A1 (en) 1971-05-01
JPS509515B1 (en) 1975-04-14
GB1271155A (en) 1972-04-19
AT301908B (en) 1972-09-25
SE386299B (en) 1976-08-02
NL162500B (en) 1979-12-17
CH511496A (en) 1971-08-15
DE1919507C3 (en) 1982-06-09
BE731974A (en) 1969-10-23
GB1271154A (en) 1972-04-19
FR2011816A1 (en) 1970-03-13

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