GB1230879A - - Google Patents

Info

Publication number
GB1230879A
GB1230879A GB1230879DA GB1230879A GB 1230879 A GB1230879 A GB 1230879A GB 1230879D A GB1230879D A GB 1230879DA GB 1230879 A GB1230879 A GB 1230879A
Authority
GB
United Kingdom
Prior art keywords
emitter
transistor
forward biased
transistors
utilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589707 external-priority patent/DE1589707C3/en
Application filed filed Critical
Publication of GB1230879A publication Critical patent/GB1230879A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electronic Switches (AREA)

Abstract

1,230,879. Semi-conductor devices. ITT INDUSTRIES Inc. 5 Dec., 1968 [9 Dec., 1967], No. 57771/68. Heading H1K. [Also in Division H3] A temperature compensated Zener diode consisting of components formed in a common semiconductor body, comprises more than two transistor structures having a common collector zone, the emitter junctions of the transistors being connected in series such that at least one is reverse biased to form a Zener diode and the remainder are forward biased, at least one of the transistors with its emitter junction forward biased being utilized to reduce the dynamic resistance of the structure. The transistors having forward biased emitter junctions form a Darlington-type configuration, the transistor effect producing the required reduction in dynamic resistance, and may be provided with emitter resistors to increase the individual emitter currents. Since the temperature coefficient of each forward biased junction varies with the current, these emitter resistors may be selected to produce the desired temperature coefficient. The resistors may comprise diffused regions in the integrated circuit or resistive tracks deposited on the surface. A transistor utilized as a forward biased diode and one utilized as a Zener diode may be combined in the form of a double emitter transistor, Fig. 9 (not shown), and the degree of temperature compensation may be controlled by selecting the coupling between the two emitters which together with their common base region may effectively form a lateral-type transistor. Various alternative circuit configurations, some using double-emitter transistors, are described, Figs. 6 to 8 and 10 to 13 (not shown). Reference has been directed by the Comptroller to Specification 1,082,519.
GB1230879D 1967-12-09 1968-12-05 Expired GB1230879A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (en) 1967-12-09 1967-12-09 Temperature compensated Z diode arrangement
DE19671589707 DE1589707C3 (en) 1967-12-09 1967-12-09 Temperature-compensated Zener diode arrangement
DE1639173 1968-01-20
DE1639173A DE1639173C3 (en) 1967-12-09 1968-01-20 Temperature-compensated Zener diode arrangement
DE1764251A DE1764251C3 (en) 1967-12-09 1968-05-02 Temperature-compensated Zener diode arrangement and method for their production

Publications (1)

Publication Number Publication Date
GB1230879A true GB1230879A (en) 1971-05-05

Family

ID=27509903

Family Applications (3)

Application Number Title Priority Date Filing Date
GB1230879D Expired GB1230879A (en) 1967-12-09 1968-12-05
GB2563/69A Expired GB1245531A (en) 1967-12-09 1969-01-16 Temperature compensated zener diode
GB20659/69A Expired GB1245668A (en) 1967-12-09 1969-04-23 Temperature compensated zener diode

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB2563/69A Expired GB1245531A (en) 1967-12-09 1969-01-16 Temperature compensated zener diode
GB20659/69A Expired GB1245668A (en) 1967-12-09 1969-04-23 Temperature compensated zener diode

Country Status (5)

Country Link
US (1) US3567965A (en)
DE (3) DE1589707B2 (en)
FR (1) FR1599179A (en)
GB (3) GB1230879A (en)
NL (1) NL6817648A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756061A (en) * 1969-09-11 1971-03-11 Philips Nv SEMICONDUCTOR DEVICE
US3703651A (en) * 1971-07-12 1972-11-21 Kollmorgen Corp Temperature-controlled integrated circuits
US3723776A (en) * 1971-12-27 1973-03-27 Us Navy Temperature compensated zener diode circuit
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS5240017B2 (en) * 1972-10-16 1977-10-08
JPS5330205Y2 (en) * 1972-11-13 1978-07-28
US3875539A (en) * 1973-11-26 1975-04-01 Amp Inc High voltage ripple reduction circuit
DE2452107C3 (en) * 1974-11-02 1979-08-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement
DE2532847C2 (en) * 1975-07-23 1982-08-19 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrated circuit with Zener diode characteristic
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
DE2645182C2 (en) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement, operating circuit for this and use of the arrangement with this operating circuit
US4311926A (en) * 1977-08-11 1982-01-19 Gte Laboratories Incorporated Emitter coupled logic programmable logic arrays
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS6048765B2 (en) * 1977-12-19 1985-10-29 日本電気株式会社 Constant voltage semiconductor integrated circuit
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3416404A1 (en) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED PLANAR SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
DE19526902A1 (en) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithically integrated planar semiconductor device

Also Published As

Publication number Publication date
DE1589707B2 (en) 1971-02-04
DE1639173B2 (en) 1971-09-23
DE1764251B2 (en) 1979-09-27
DE1764251A1 (en) 1972-05-04
DE1764251C3 (en) 1980-06-19
DE1639173C3 (en) 1979-03-15
GB1245531A (en) 1971-09-08
DE1589707A1 (en) 1970-05-06
GB1245668A (en) 1971-09-08
FR1599179A (en) 1970-07-15
DE1639173A1 (en) 1971-04-08
US3567965A (en) 1971-03-02
NL6817648A (en) 1969-06-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee