ES386979A1 - Improvements in and relating to integrated capacitor memories - Google Patents

Improvements in and relating to integrated capacitor memories

Info

Publication number
ES386979A1
ES386979A1 ES386979A ES386979A ES386979A1 ES 386979 A1 ES386979 A1 ES 386979A1 ES 386979 A ES386979 A ES 386979A ES 386979 A ES386979 A ES 386979A ES 386979 A1 ES386979 A1 ES 386979A1
Authority
ES
Spain
Prior art keywords
transistors
capacitors
common
delay time
integrated capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES386979A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES386979A1 publication Critical patent/ES386979A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

An integrated capacitor memory used inter alia for delaying transit times of A.F. and V.F. signals comprises a chain of capacitors between which charge can be transferred via a corresponding chain of transistors in response to control signals applied through their bases, the capacitors being constituted by the collector-base capacitances of the transistors, which are formed in islands on a common substrate. Independent signals can be applied to each transistor (Fig. 1, not shown) to give the maximum delay time per transistor but the number of switching sources can be reduced with only a slight loss of delay time by arranging the transistors in a series of groups (Fig. 6) and applying a common signal to the corresponding transistors in each group, which preferably have a common base region with an N+ underlayer, as in the Fig. 10 structure (not shown), which lacks the final diode D of the Fig. 6 circuit. The circuit operates as described in Specification 1,175,600. In Fig. 10 (not shown) the transistors are of lateral type with the emitter and collector zones formed by diffusion into an epitaxial N-type base layer, which may be contacted at one or several points, on a P-type silicon substrate.
ES386979A 1968-04-23 1970-12-31 Improvements in and relating to integrated capacitor memories Expired ES386979A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.

Publications (1)

Publication Number Publication Date
ES386979A1 true ES386979A1 (en) 1973-12-01

Family

ID=19803412

Family Applications (2)

Application Number Title Priority Date Filing Date
ES366285A Expired ES366285A1 (en) 1968-04-23 1969-04-21 Improvements in and relating to integrated capacitor memories
ES386979A Expired ES386979A1 (en) 1968-04-23 1970-12-31 Improvements in and relating to integrated capacitor memories

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES366285A Expired ES366285A1 (en) 1968-04-23 1969-04-21 Improvements in and relating to integrated capacitor memories

Country Status (11)

Country Link
JP (1) JPS509515B1 (en)
AT (1) AT301908B (en)
BE (1) BE731974A (en)
CH (1) CH511496A (en)
DE (2) DE1919507C3 (en)
DK (1) DK131253B (en)
ES (2) ES366285A1 (en)
FR (1) FR2011816A1 (en)
GB (2) GB1271154A (en)
NL (1) NL162500C (en)
SE (1) SE386299B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574629B2 (en) * 2008-08-01 2013-11-05 Anteis S.A. Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
DK131253B (en) 1975-06-16
NL162500C (en) 1980-05-16
DE1966847A1 (en) 1974-09-19
DE1919507B2 (en) 1979-12-06
NL6805704A (en) 1969-10-27
DK131253C (en) 1975-11-17
DE1919507A1 (en) 1969-11-20
ES366285A1 (en) 1971-05-01
JPS509515B1 (en) 1975-04-14
GB1271155A (en) 1972-04-19
AT301908B (en) 1972-09-25
SE386299B (en) 1976-08-02
NL162500B (en) 1979-12-17
CH511496A (en) 1971-08-15
DE1919507C3 (en) 1982-06-09
BE731974A (en) 1969-10-23
GB1271154A (en) 1972-04-19
FR2011816A1 (en) 1970-03-13

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