GB1251631A - - Google Patents
Info
- Publication number
- GB1251631A GB1251631A GB1251631DA GB1251631A GB 1251631 A GB1251631 A GB 1251631A GB 1251631D A GB1251631D A GB 1251631DA GB 1251631 A GB1251631 A GB 1251631A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- trifluorophosphine
- jan
- substrate
- schottby
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,251,631. Semi-conductor devices. SIEMENS A.G. 1 Jan., 1970 [2 Jan., 1969], No. 53/70. Heading H1K. [Also in Division C7] Metal layers, e.g. in metal-base transistors and Schottby diodes, are produced on a substrate, e.g. Ge, Si, an A<SP>III</SP>B<SP>V</SP> compound, a ceramic, metal, or quartz, by decomposition from the vapour phase of a trifluorophosphine or trifluorophosphine hydride of said metal, which may be Fe, Co, Ni, Cr, Mo, W, V, Nb, Ta, Ru, Rh, Pd, Os, Ir, or Pt. The substrate may be pre-treated with SF 6 or NF 3 at 500-1000‹ C., and in an example a Si wafer is etched in HF prior to this. A carrier gas which is H 2 and/or a noble gas may be used for the deposition, which takes place at 350-600‹ C. to give an about 1000 Š metal layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691900119 DE1900119B2 (en) | 1969-01-02 | 1969-01-02 | PROCESS FOR DEPOSITING HIGH-MELTING CONTACT METAL LAYERS AT LOW TEMPERATURES |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1251631A true GB1251631A (en) | 1971-10-27 |
Family
ID=5721667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1251631D Expired GB1251631A (en) | 1969-01-02 | 1970-01-01 |
Country Status (9)
Country | Link |
---|---|
US (1) | US3619288A (en) |
JP (1) | JPS4822886B1 (en) |
AT (1) | AT293813B (en) |
CH (1) | CH550862A (en) |
DE (1) | DE1900119B2 (en) |
FR (1) | FR2027649A1 (en) |
GB (1) | GB1251631A (en) |
NL (1) | NL6915312A (en) |
SE (1) | SE341864B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2194966A (en) * | 1986-08-20 | 1988-03-23 | Gen Electric Plc | Deposition of films |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929630C2 (en) * | 1979-07-21 | 1983-12-15 | Dornier System Gmbh, 7990 Friedrichshafen | Process for the production of silver powder |
US4619840A (en) * | 1983-05-23 | 1986-10-28 | Thermco Systems, Inc. | Process and apparatus for low pressure chemical vapor deposition of refractory metal |
US4817557A (en) * | 1983-05-23 | 1989-04-04 | Anicon, Inc. | Process and apparatus for low pressure chemical vapor deposition of refractory metal |
JPS6050920A (en) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | Manufacture of semiconductor device |
US4478890A (en) * | 1983-09-12 | 1984-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Low temperature deposition of nickel films |
JPS6164344U (en) * | 1984-09-29 | 1986-05-01 | ||
JPS6265754A (en) * | 1985-09-18 | 1987-03-25 | 富士ゼロツクスオフイスサプライ株式会社 | Shredder |
DE3762052D1 (en) * | 1986-03-31 | 1990-05-03 | Unisys Corp | DEPOSITION OF A VANADIN MAT FOR MAGNETIC FILMS. |
US4868005A (en) * | 1986-04-09 | 1989-09-19 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4748045A (en) * | 1986-04-09 | 1988-05-31 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4668528A (en) * | 1986-04-09 | 1987-05-26 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4830982A (en) * | 1986-12-16 | 1989-05-16 | American Telephone And Telegraph Company | Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
US4782034A (en) * | 1987-06-04 | 1988-11-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semi-insulating group III-V based compositions doped using bis arene titanium sources |
EP0338206A1 (en) * | 1988-03-24 | 1989-10-25 | Siemens Aktiengesellschaft | Process for depositing conformal layers of tungsten onto semi-conductor substrates, for the production of integrated circuits |
EP0349696A1 (en) * | 1988-07-08 | 1990-01-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of depositing metal on an aluminium substrate |
EP0355296A3 (en) * | 1988-08-18 | 1991-01-02 | Siemens Aktiengesellschaft | Tungsten-halophosphine complexes suitable for cvd, and process for their production |
DE4023883A1 (en) * | 1990-07-27 | 1992-01-30 | Kali Chemie Ag | METHOD FOR DEPOSITING LAYERS CONTAINING TRANSITION METAL |
US5320978A (en) * | 1993-07-30 | 1994-06-14 | The United States Of America As Represented By The Secretary Of The Navy | Selective area platinum film deposition |
US6087704A (en) * | 1997-09-30 | 2000-07-11 | National Science Council | Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer |
JP4860176B2 (en) * | 2005-05-02 | 2012-01-25 | 株式会社トリケミカル研究所 | Method for producing Ni (PF3) 4 |
FR3108920B1 (en) | 2020-04-07 | 2022-07-22 | Commissariat Energie Atomique | METHOD FOR DEPOSITING A METALLIC FILM OF TUNGSTEN OR MOLYBDENUM BY ALD |
-
1969
- 1969-01-02 DE DE19691900119 patent/DE1900119B2/en active Pending
- 1969-10-09 NL NL6915312A patent/NL6915312A/xx unknown
- 1969-12-18 CH CH1880269A patent/CH550862A/en not_active IP Right Cessation
- 1969-12-22 US US886946A patent/US3619288A/en not_active Expired - Lifetime
- 1969-12-26 JP JP44104498A patent/JPS4822886B1/ja active Pending
- 1969-12-29 AT AT1208669A patent/AT293813B/en not_active IP Right Cessation
- 1969-12-30 FR FR6945428A patent/FR2027649A1/fr not_active Withdrawn
-
1970
- 1970-01-01 GB GB1251631D patent/GB1251631A/en not_active Expired
- 1970-01-02 SE SE46/70A patent/SE341864B/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2194966A (en) * | 1986-08-20 | 1988-03-23 | Gen Electric Plc | Deposition of films |
Also Published As
Publication number | Publication date |
---|---|
NL6915312A (en) | 1970-07-06 |
DE1900119A1 (en) | 1970-08-13 |
SE341864B (en) | 1972-01-17 |
US3619288A (en) | 1971-11-09 |
CH550862A (en) | 1974-06-28 |
DE1900119B2 (en) | 1977-06-30 |
FR2027649A1 (en) | 1970-10-02 |
JPS4822886B1 (en) | 1973-07-10 |
AT293813B (en) | 1971-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |