GB1251631A - - Google Patents

Info

Publication number
GB1251631A
GB1251631A GB1251631DA GB1251631A GB 1251631 A GB1251631 A GB 1251631A GB 1251631D A GB1251631D A GB 1251631DA GB 1251631 A GB1251631 A GB 1251631A
Authority
GB
United Kingdom
Prior art keywords
metal
trifluorophosphine
jan
substrate
schottby
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1251631A publication Critical patent/GB1251631A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,251,631. Semi-conductor devices. SIEMENS A.G. 1 Jan., 1970 [2 Jan., 1969], No. 53/70. Heading H1K. [Also in Division C7] Metal layers, e.g. in metal-base transistors and Schottby diodes, are produced on a substrate, e.g. Ge, Si, an A<SP>III</SP>B<SP>V</SP> compound, a ceramic, metal, or quartz, by decomposition from the vapour phase of a trifluorophosphine or trifluorophosphine hydride of said metal, which may be Fe, Co, Ni, Cr, Mo, W, V, Nb, Ta, Ru, Rh, Pd, Os, Ir, or Pt. The substrate may be pre-treated with SF 6 or NF 3 at 500-1000‹ C., and in an example a Si wafer is etched in HF prior to this. A carrier gas which is H 2 and/or a noble gas may be used for the deposition, which takes place at 350-600‹ C. to give an about 1000 Š metal layer.
GB1251631D 1969-01-02 1970-01-01 Expired GB1251631A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691900119 DE1900119B2 (en) 1969-01-02 1969-01-02 PROCESS FOR DEPOSITING HIGH-MELTING CONTACT METAL LAYERS AT LOW TEMPERATURES

Publications (1)

Publication Number Publication Date
GB1251631A true GB1251631A (en) 1971-10-27

Family

ID=5721667

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1251631D Expired GB1251631A (en) 1969-01-02 1970-01-01

Country Status (9)

Country Link
US (1) US3619288A (en)
JP (1) JPS4822886B1 (en)
AT (1) AT293813B (en)
CH (1) CH550862A (en)
DE (1) DE1900119B2 (en)
FR (1) FR2027649A1 (en)
GB (1) GB1251631A (en)
NL (1) NL6915312A (en)
SE (1) SE341864B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194966A (en) * 1986-08-20 1988-03-23 Gen Electric Plc Deposition of films

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929630C2 (en) * 1979-07-21 1983-12-15 Dornier System Gmbh, 7990 Friedrichshafen Process for the production of silver powder
US4619840A (en) * 1983-05-23 1986-10-28 Thermco Systems, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
JPS6050920A (en) * 1983-08-30 1985-03-22 Toshiba Corp Manufacture of semiconductor device
US4478890A (en) * 1983-09-12 1984-10-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature deposition of nickel films
JPS6164344U (en) * 1984-09-29 1986-05-01
JPS6265754A (en) * 1985-09-18 1987-03-25 富士ゼロツクスオフイスサプライ株式会社 Shredder
DE3762052D1 (en) * 1986-03-31 1990-05-03 Unisys Corp DEPOSITION OF A VANADIN MAT FOR MAGNETIC FILMS.
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
EP0338206A1 (en) * 1988-03-24 1989-10-25 Siemens Aktiengesellschaft Process for depositing conformal layers of tungsten onto semi-conductor substrates, for the production of integrated circuits
EP0349696A1 (en) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of depositing metal on an aluminium substrate
EP0355296A3 (en) * 1988-08-18 1991-01-02 Siemens Aktiengesellschaft Tungsten-halophosphine complexes suitable for cvd, and process for their production
DE4023883A1 (en) * 1990-07-27 1992-01-30 Kali Chemie Ag METHOD FOR DEPOSITING LAYERS CONTAINING TRANSITION METAL
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US6087704A (en) * 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
JP4860176B2 (en) * 2005-05-02 2012-01-25 株式会社トリケミカル研究所 Method for producing Ni (PF3) 4
FR3108920B1 (en) 2020-04-07 2022-07-22 Commissariat Energie Atomique METHOD FOR DEPOSITING A METALLIC FILM OF TUNGSTEN OR MOLYBDENUM BY ALD

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2194966A (en) * 1986-08-20 1988-03-23 Gen Electric Plc Deposition of films

Also Published As

Publication number Publication date
NL6915312A (en) 1970-07-06
DE1900119A1 (en) 1970-08-13
SE341864B (en) 1972-01-17
US3619288A (en) 1971-11-09
CH550862A (en) 1974-06-28
DE1900119B2 (en) 1977-06-30
FR2027649A1 (en) 1970-10-02
JPS4822886B1 (en) 1973-07-10
AT293813B (en) 1971-10-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees