AT293813B - Process for the deposition of a high-melting contact metal layer at low temperatures - Google Patents

Process for the deposition of a high-melting contact metal layer at low temperatures

Info

Publication number
AT293813B
AT293813B AT1208669A AT1208669A AT293813B AT 293813 B AT293813 B AT 293813B AT 1208669 A AT1208669 A AT 1208669A AT 1208669 A AT1208669 A AT 1208669A AT 293813 B AT293813 B AT 293813B
Authority
AT
Austria
Prior art keywords
deposition
metal layer
low temperatures
contact metal
melting contact
Prior art date
Application number
AT1208669A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT293813B publication Critical patent/AT293813B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AT1208669A 1969-01-02 1969-12-29 Process for the deposition of a high-melting contact metal layer at low temperatures AT293813B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691900119 DE1900119B2 (en) 1969-01-02 1969-01-02 PROCESS FOR DEPOSITING HIGH-MELTING CONTACT METAL LAYERS AT LOW TEMPERATURES

Publications (1)

Publication Number Publication Date
AT293813B true AT293813B (en) 1971-10-25

Family

ID=5721667

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1208669A AT293813B (en) 1969-01-02 1969-12-29 Process for the deposition of a high-melting contact metal layer at low temperatures

Country Status (9)

Country Link
US (1) US3619288A (en)
JP (1) JPS4822886B1 (en)
AT (1) AT293813B (en)
CH (1) CH550862A (en)
DE (1) DE1900119B2 (en)
FR (1) FR2027649A1 (en)
GB (1) GB1251631A (en)
NL (1) NL6915312A (en)
SE (1) SE341864B (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929630C2 (en) * 1979-07-21 1983-12-15 Dornier System Gmbh, 7990 Friedrichshafen Process for the production of silver powder
US4817557A (en) * 1983-05-23 1989-04-04 Anicon, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4619840A (en) * 1983-05-23 1986-10-28 Thermco Systems, Inc. Process and apparatus for low pressure chemical vapor deposition of refractory metal
JPS6050920A (en) * 1983-08-30 1985-03-22 Toshiba Corp Manufacture of semiconductor device
US4478890A (en) * 1983-09-12 1984-10-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature deposition of nickel films
JPS6164344U (en) * 1984-09-29 1986-05-01
JPS6265754A (en) * 1985-09-18 1987-03-25 富士ゼロツクスオフイスサプライ株式会社 Shredder
EP0241155B1 (en) * 1986-03-31 1990-03-28 Unisys Corporation Depositing vanadium underlayer for magnetic films
US4748045A (en) * 1986-04-09 1988-05-31 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4668528A (en) * 1986-04-09 1987-05-26 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
EP0338206A1 (en) * 1988-03-24 1989-10-25 Siemens Aktiengesellschaft Process for depositing conformal layers of tungsten onto semi-conductor substrates, for the production of integrated circuits
EP0349696A1 (en) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of depositing metal on an aluminium substrate
EP0355296A3 (en) * 1988-08-18 1991-01-02 Siemens Aktiengesellschaft Tungsten-halophosphine complexes suitable for cvd, and process for their production
DE4023883A1 (en) * 1990-07-27 1992-01-30 Kali Chemie Ag METHOD FOR DEPOSITING LAYERS CONTAINING TRANSITION METAL
US5320978A (en) * 1993-07-30 1994-06-14 The United States Of America As Represented By The Secretary Of The Navy Selective area platinum film deposition
US6087704A (en) 1997-09-30 2000-07-11 National Science Council Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer
JP4860176B2 (en) * 2005-05-02 2012-01-25 株式会社トリケミカル研究所 Method for producing Ni (PF3) 4
FR3108920B1 (en) 2020-04-07 2022-07-22 Commissariat Energie Atomique METHOD FOR DEPOSITING A METALLIC FILM OF TUNGSTEN OR MOLYBDENUM BY ALD

Also Published As

Publication number Publication date
JPS4822886B1 (en) 1973-07-10
DE1900119B2 (en) 1977-06-30
DE1900119A1 (en) 1970-08-13
GB1251631A (en) 1971-10-27
US3619288A (en) 1971-11-09
SE341864B (en) 1972-01-17
FR2027649A1 (en) 1970-10-02
CH550862A (en) 1974-06-28
NL6915312A (en) 1970-07-06

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee