GB1144855A - System for making silicon - Google Patents

System for making silicon

Info

Publication number
GB1144855A
GB1144855A GB842267A GB842267A GB1144855A GB 1144855 A GB1144855 A GB 1144855A GB 842267 A GB842267 A GB 842267A GB 842267 A GB842267 A GB 842267A GB 1144855 A GB1144855 A GB 1144855A
Authority
GB
United Kingdom
Prior art keywords
sihcl
silicon
sicl
hcl
remove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB842267A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1144855A publication Critical patent/GB1144855A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

1,144,855. Silicon. MOTOROLA Inc. 22 Feb., 1967 [4 April, 1966], No. 8422/67. Heading C1A. Monocrystalline silicon is deposited on to a monocrystalline silicon body from a gaseous mixture of silicochloroform, silicon tetrachloride and hydrogen at a temperature above 1000‹ C.; the SiHCl 3 to SiCl 4 mole ratio being maintained between 2 to 1 and 10 to 1. In a cyclic process, the effluent gas is cooled to - 20‹ C. to condense the silicon halides, which may then be partially distilled to remove some of the SiCl 4 formed from the SiHCl 3 , and then passed through an absorption column of activated carbon to remove the HCl and to leave the H 2 . The recycle stream consists of up to 12 mole per cent of silicon halide, i.e. SiCl 4 plus SiHCl 3 in the desired ratio, the H 2 and some HCl if desired; make-up H 2 and SiHCl 3 being added in amounts equivalent to the H 2 and Si, respectively, lost from the gas. A suitable flow rate of mixture is 200 l./min. with 4 l./min. of make-up SiHCl 3 added.
GB842267A 1966-04-04 1967-02-22 System for making silicon Expired GB1144855A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53995566A 1966-04-04 1966-04-04

Publications (1)

Publication Number Publication Date
GB1144855A true GB1144855A (en) 1969-03-12

Family

ID=24153352

Family Applications (1)

Application Number Title Priority Date Filing Date
GB842267A Expired GB1144855A (en) 1966-04-04 1967-02-22 System for making silicon

Country Status (3)

Country Link
FR (1) FR1514885A (en)
GB (1) GB1144855A (en)
NL (1) NL6704774A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279456A (en) * 2017-10-27 2020-06-12 奈克斯沃夫有限公司 Method and apparatus for continuous vapor deposition of silicon on a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2523113A1 (en) * 1982-03-10 1983-09-16 G Pi Reclaiming chloro:silane and hydrogen when mfg. silicon - where gas leaving reactor is subjected to multistage fractional condensn. and then multistage cooling

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111279456A (en) * 2017-10-27 2020-06-12 奈克斯沃夫有限公司 Method and apparatus for continuous vapor deposition of silicon on a substrate

Also Published As

Publication number Publication date
FR1514885A (en) 1968-02-23
NL6704774A (en) 1967-10-05

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