GB926807A - Methods of forming silicon and silicon formed by the method - Google Patents

Methods of forming silicon and silicon formed by the method

Info

Publication number
GB926807A
GB926807A GB1517/61A GB151761A GB926807A GB 926807 A GB926807 A GB 926807A GB 1517/61 A GB1517/61 A GB 1517/61A GB 151761 A GB151761 A GB 151761A GB 926807 A GB926807 A GB 926807A
Authority
GB
United Kingdom
Prior art keywords
silicon
hydrogen
reaction
hydrogen halide
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1517/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES66651A external-priority patent/DE1124028B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB926807A publication Critical patent/GB926807A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Abstract

Monocrystalline silicon is formed by the thermal reduction of one or more halogencontaining silicon compounds by passing said compound or compounds together with hydrogen over a monocrystalline body of silicon, the surface of which is heated to a predetermined temperature, hydrogen halide being added to the reaction mixture prior to its passage over said body in an amount such that the equilibrium temperature at which no silicon is deposited from the reaction gas and below which previously deposited silicon is reconverted to the gaseous phase lies not more than 200 DEG C. below said predetermined temperature. Halogen-containing silicon compounds mentioned are SiCl4, SiHCl3, SiH2Cl2, SiBr4 and SiHBr3, while hydrogen halides mentioned are HCl and HBr. The hydrogen halide preferably contains the same halogen as the silicon compound. The hydrogen halide may be formed by partial reaction of the halogen-containing silicon compound before the gaseous mixture is passed over the silicon body, e.g. by adding pure water to the silicon compound or by partially subjecting a mixture of the silicon compound and hydrogen to a high-voltage electrical discharge. Alternatively hydrogen halide may be added to the spent gas from a previous reaction in which silicon was formed by decomposition of a halogen-containing silicon compound, such spent gas already containing some hydrogen halide formed in the reaction. Preferably the conditions are so arranged that the equilibrium temperature is above 900 DEG C. Specifications 809,250 and 880,559 are referred to.
GB1517/61A 1960-01-15 1961-01-13 Methods of forming silicon and silicon formed by the method Expired GB926807A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES66651A DE1124028B (en) 1960-01-15 1960-01-15 Process for producing single crystal silicon

Publications (1)

Publication Number Publication Date
GB926807A true GB926807A (en) 1963-05-22

Family

ID=7498973

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1517/61A Expired GB926807A (en) 1960-01-15 1961-01-13 Methods of forming silicon and silicon formed by the method
GB31276/63A Expired GB1016578A (en) 1960-01-15 1963-08-08 Improvements in or relating to processes for the production of high purity monocrystalline silicon

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB31276/63A Expired GB1016578A (en) 1960-01-15 1963-08-08 Improvements in or relating to processes for the production of high purity monocrystalline silicon

Country Status (4)

Country Link
US (1) US3239372A (en)
CH (1) CH426742A (en)
GB (2) GB926807A (en)
NL (3) NL271203A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330251A (en) * 1955-11-02 1967-07-11 Siemens Ag Apparatus for producing highest-purity silicon for electric semiconductor devices
DE1444526B2 (en) * 1962-08-24 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Method of depositing a semi-conductive element
US3862020A (en) * 1970-12-07 1975-01-21 Dow Corning Production method for polycrystalline semiconductor bodies
IN157312B (en) * 1982-01-12 1986-03-01 Rca Corp
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
JP2651146B2 (en) * 1987-03-02 1997-09-10 キヤノン株式会社 Crystal manufacturing method
ES2331283B1 (en) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) HIGH PURITY SILICON DEPOSIT REACTOR FOR PHOTOVOLTAIC APPLICATIONS.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025845B (en) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Process for the production of the purest silicon
BE554836A (en) * 1956-02-11

Also Published As

Publication number Publication date
GB1016578A (en) 1966-01-12
CH426742A (en) 1966-12-31
NL271203A (en)
NL260072A (en)
NL131048C (en)
US3239372A (en) 1966-03-08

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