GB1057119A - Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering - Google Patents

Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering

Info

Publication number
GB1057119A
GB1057119A GB4863765A GB4863765A GB1057119A GB 1057119 A GB1057119 A GB 1057119A GB 4863765 A GB4863765 A GB 4863765A GB 4863765 A GB4863765 A GB 4863765A GB 1057119 A GB1057119 A GB 1057119A
Authority
GB
United Kingdom
Prior art keywords
ion beam
carrier
target
sputtering
moved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4863765A
Inventor
Siegfried Schiller
Ulrich Heisig
Gunther Beister
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HERMSDORF KERAMIK VEB
Keramische Werke Hermsdorf VEB
Original Assignee
HERMSDORF KERAMIK VEB
Keramische Werke Hermsdorf VEB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HERMSDORF KERAMIK VEB, Keramische Werke Hermsdorf VEB filed Critical HERMSDORF KERAMIK VEB
Priority to GB4863765A priority Critical patent/GB1057119A/en
Publication of GB1057119A publication Critical patent/GB1057119A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Thin films e.g. of alloys or compounds are produced on a substrate carrier 1 by sputtering a target 2 by means of an ion beam source wherein the carrier and target are brought consecutively into the ion beam 3. During sputtering the target, preferably composed of a plurality of different substances for multi-component films, may be moved in a programmed manner relatively to the ion beam axis; or a plurality of targets 5-8 e.g. on a turntable device 4 (see Fig.2), each of a different substance, may be provided with <PICT:1057119/C6-C7/1> <PICT:1057119/C6-C7/2> appropriate masks 9 to prevent contamination of targets and carriers not being subjected to the beam 3. Preferably, the carrier 1 is first moved parallel to the ion beam from position a into position b and then rocked through 90 DEG into the ion beam 3 (as shown in Fig.1) to clean it, then restored to position a in reverse sequence, and then the target 2 is moved from resting position c into the ion beam to sputter it, restored to position c and the entire procedure repeated. The sputtering may be effected under vacuum or a partial pressure of an inert gas.
GB4863765A 1965-11-16 1965-11-16 Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering Expired GB1057119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4863765A GB1057119A (en) 1965-11-16 1965-11-16 Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4863765A GB1057119A (en) 1965-11-16 1965-11-16 Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering

Publications (1)

Publication Number Publication Date
GB1057119A true GB1057119A (en) 1967-02-01

Family

ID=10449358

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4863765A Expired GB1057119A (en) 1965-11-16 1965-11-16 Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering

Country Status (1)

Country Link
GB (1) GB1057119A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824818A1 (en) * 1977-06-06 1978-12-07 William James Dr King ION BEAM SPUTTER IMPLANTING PROCEDURE
EP0167383A2 (en) * 1984-07-04 1986-01-08 University Of Salford Apparatus for and a method of modifying the properties of a material
GB2199593A (en) * 1986-12-09 1988-07-13 Brian Langley Evans Manufacturing multilayer optical/semiconductor devices by ion beam sputtering
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target
DE3904991A1 (en) * 1989-02-18 1990-08-23 Leybold Ag Cathode sputtering device
US8354652B2 (en) 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
US8400063B2 (en) 2006-07-20 2013-03-19 Aviza Technology Limited Plasma sources
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824818A1 (en) * 1977-06-06 1978-12-07 William James Dr King ION BEAM SPUTTER IMPLANTING PROCEDURE
EP0167383A2 (en) * 1984-07-04 1986-01-08 University Of Salford Apparatus for and a method of modifying the properties of a material
EP0167383A3 (en) * 1984-07-04 1987-09-09 University Of Salford Apparatus for and a method of modifying the properties of a material
GB2199593A (en) * 1986-12-09 1988-07-13 Brian Langley Evans Manufacturing multilayer optical/semiconductor devices by ion beam sputtering
GB2199593B (en) * 1986-12-09 1991-08-14 Brian Langley Evans Method and apparatus for fabrication of multilayered structures.
GB2213501A (en) * 1987-12-11 1989-08-16 Plessey Co Plc Production of superconducting thin films by ion beam sputtering from a single ceramic target
DE3904991A1 (en) * 1989-02-18 1990-08-23 Leybold Ag Cathode sputtering device
US8354652B2 (en) 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
US8400063B2 (en) 2006-07-20 2013-03-19 Aviza Technology Limited Plasma sources
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets

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