GB2199593B - Method and apparatus for fabrication of multilayered structures. - Google Patents

Method and apparatus for fabrication of multilayered structures.

Info

Publication number
GB2199593B
GB2199593B GB8728750A GB8728750A GB2199593B GB 2199593 B GB2199593 B GB 2199593B GB 8728750 A GB8728750 A GB 8728750A GB 8728750 A GB8728750 A GB 8728750A GB 2199593 B GB2199593 B GB 2199593B
Authority
GB
United Kingdom
Prior art keywords
fabrication
multilayered structures
multilayered
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8728750A
Other versions
GB2199593A (en
GB8728750D0 (en
Inventor
Brian Langley Evans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Publication of GB8728750D0 publication Critical patent/GB8728750D0/en
Publication of GB2199593A publication Critical patent/GB2199593A/en
Application granted granted Critical
Publication of GB2199593B publication Critical patent/GB2199593B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
GB8728750A 1986-12-09 1987-12-09 Method and apparatus for fabrication of multilayered structures. Expired - Fee Related GB2199593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868629409A GB8629409D0 (en) 1986-12-09 1986-12-09 Multilayered structures

Publications (3)

Publication Number Publication Date
GB8728750D0 GB8728750D0 (en) 1988-01-27
GB2199593A GB2199593A (en) 1988-07-13
GB2199593B true GB2199593B (en) 1991-08-14

Family

ID=10608702

Family Applications (2)

Application Number Title Priority Date Filing Date
GB868629409A Pending GB8629409D0 (en) 1986-12-09 1986-12-09 Multilayered structures
GB8728750A Expired - Fee Related GB2199593B (en) 1986-12-09 1987-12-09 Method and apparatus for fabrication of multilayered structures.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB868629409A Pending GB8629409D0 (en) 1986-12-09 1986-12-09 Multilayered structures

Country Status (4)

Country Link
EP (1) EP0292533A1 (en)
JP (1) JPH01502057A (en)
GB (2) GB8629409D0 (en)
WO (1) WO1988004332A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8823047D0 (en) * 1988-09-30 1988-11-09 Imperial College Fabrication of semiconductor nanostructures
US5486949A (en) 1989-06-20 1996-01-23 The Dow Chemical Company Birefringent interference polarizer
US6423419B1 (en) 1995-07-19 2002-07-23 Teer Coatings Limited Molybdenum-sulphur coatings
GB9514773D0 (en) * 1995-07-19 1995-09-20 Teer Coatings Ltd Methods for improving the sputter deposition of metal-sulphur coatings e.g.molybdenum disulphide(MoS2) coatings
JP3022328B2 (en) * 1996-06-19 2000-03-21 日本電気株式会社 Thin film formation method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1057119A (en) * 1965-11-16 1967-02-01 Hermsdorf Keramik Veb Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering
GB1133936A (en) * 1965-06-16 1968-11-20 Ion Physics Corp Method and apparatus for forming tenacious deposits on a surface
EP0003425A1 (en) * 1978-01-26 1979-08-08 Sotec Corporation A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
GB1600218A (en) * 1977-06-06 1981-10-14 King W J Ion beam intplantation
EP0053712A1 (en) * 1980-12-08 1982-06-16 International Business Machines Corporation Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1133936A (en) * 1965-06-16 1968-11-20 Ion Physics Corp Method and apparatus for forming tenacious deposits on a surface
GB1057119A (en) * 1965-11-16 1967-02-01 Hermsdorf Keramik Veb Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering
GB1600218A (en) * 1977-06-06 1981-10-14 King W J Ion beam intplantation
EP0003425A1 (en) * 1978-01-26 1979-08-08 Sotec Corporation A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
EP0053712A1 (en) * 1980-12-08 1982-06-16 International Business Machines Corporation Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film

Also Published As

Publication number Publication date
JPH01502057A (en) 1989-07-13
GB2199593A (en) 1988-07-13
WO1988004332A1 (en) 1988-06-16
GB8629409D0 (en) 1987-01-21
EP0292533A1 (en) 1988-11-30
GB8728750D0 (en) 1988-01-27

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941209