GB1044469A - Power transistor - Google Patents

Power transistor

Info

Publication number
GB1044469A
GB1044469A GB3902463A GB3902463A GB1044469A GB 1044469 A GB1044469 A GB 1044469A GB 3902463 A GB3902463 A GB 3902463A GB 3902463 A GB3902463 A GB 3902463A GB 1044469 A GB1044469 A GB 1044469A
Authority
GB
United Kingdom
Prior art keywords
emitter
contact
electrode
emitter electrode
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3902463A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
TDK Micronas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Micronas GmbH filed Critical TDK Micronas GmbH
Publication of GB1044469A publication Critical patent/GB1044469A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,044,469. Semi-conductor devices; component assemblies. INTERMETALL GESELLSCHAFT FUR METALLURGIE UND ELEKTRONIK. Oct. 3, 1963 [Oct. 4, 1962], No. 39024/63. Headings H1K and H1R. In a power transistor having a flat emitter electrode, partial areas of this electrode are connected to an emitter connection by means of resistors. As shown, Fig. 2, a power transistor comprises an emitter electrode 4, a base region 6, and a collector region 7. The emitter electrode 4 is comb-shaped and a resistive layer 5, comprising a mixture of a metal with a metal oxide, is evaporated on to it through a mask, and a metal emitter contact 3 is similarly evaporated on top of resistive layer 5. The base contact 9 is also comb-shaped and is interdigitated with the emitter contact. This emitter construction effectively comprises a large number of emitter electrodes individually connected by resistors to the emitter contact and this prevents localized thermal runaway of the transistor. In a second embodiment, Fig. 3 (not shown), a commercial silicon power transistor is modified by etching the emitter electrode to form a plurality of strips 41 to 44 which are connected to a common contact 3 by short lengths 51 to 54 of resistance wire. Alternatively, the plurality of emitter electrode strips can be formed by evaporating material on to the device and then alloying and making the resistive connections. In another embodiment, Fig. 4 (not shown), a planar transistor is provided with a coating 10 of silicon dioxide on which is deposited the emitter contact 31 which is connected to the partial emitter electrodes 41, 42, 43 by resistive strips 55, 56, 57 evaporated on to coating 10. A further embodiment, Fig. 5 (not shown), comprises a planar resistor with a plurality of partial emitter electrodes 41, 42, the whole surface being covered with a layer 101 of silicon dioxide in which pairs of small windows 12 are etched to expose each emitter electrode in two places. An emitter contact 31 is deposited on layer 101 passing between the two windows of each pair and resistive strips 56, 57 are then evaporated on to the device to join the emitter contact 31 to two points of each emitter electrode.
GB3902463A 1962-10-04 1963-10-03 Power transistor Expired GB1044469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ22459A DE1264615B (en) 1962-10-04 1962-10-04 Emitter connection of a power transistor

Publications (1)

Publication Number Publication Date
GB1044469A true GB1044469A (en) 1966-09-28

Family

ID=7200967

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3902463A Expired GB1044469A (en) 1962-10-04 1963-10-03 Power transistor

Country Status (4)

Country Link
DE (1) DE1264615B (en)
FR (1) FR1358189A (en)
GB (1) GB1044469A (en)
NL (1) NL296170A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2011431A1 (en) * 1968-06-21 1970-02-27 Philips Nv
DE2251727A1 (en) * 1972-10-21 1974-04-25 Licentia Gmbh SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES
JPS5128471B1 (en) * 1970-10-10 1976-08-19
EP0239960A2 (en) * 1986-03-31 1987-10-07 Kabushiki Kaisha Toshiba Power transistor device
DE3346518C1 (en) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Field effect transistor with insulated gate electrode
WO2004017415A1 (en) * 2002-08-06 2004-02-26 Nanoteco Corporation Bipolar transistor for avoiding thermal runaway

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
DE1514266C3 (en) * 1965-08-12 1984-05-03 N.V. Philips' Gloeilampenfabrieken, Eindhoven Semiconductor device and circuit therefor
JPS5025306B1 (en) * 1968-04-04 1975-08-22
NL6813997A (en) * 1968-09-30 1970-04-01
NL7002117A (en) * 1970-02-14 1971-08-17
JPS5641186B2 (en) * 1972-03-03 1981-09-26
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1786107U (en) * 1956-09-25 1959-04-02 Siemens Ag POWER TRANSISTOR.
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2011431A1 (en) * 1968-06-21 1970-02-27 Philips Nv
JPS5128471B1 (en) * 1970-10-10 1976-08-19
DE2251727A1 (en) * 1972-10-21 1974-04-25 Licentia Gmbh SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES
DE3346518C1 (en) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Field effect transistor with insulated gate electrode
US4845536A (en) * 1983-12-22 1989-07-04 Texas Instruments Incorporated Transistor structure
EP0239960A2 (en) * 1986-03-31 1987-10-07 Kabushiki Kaisha Toshiba Power transistor device
EP0239960A3 (en) * 1986-03-31 1990-04-25 Kabushiki Kaisha Toshiba Power transistor device
WO2004017415A1 (en) * 2002-08-06 2004-02-26 Nanoteco Corporation Bipolar transistor for avoiding thermal runaway

Also Published As

Publication number Publication date
NL296170A (en)
FR1358189A (en) 1964-04-10
DE1264615B (en) 1968-03-28

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