JPS55165672A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55165672A
JPS55165672A JP7217779A JP7217779A JPS55165672A JP S55165672 A JPS55165672 A JP S55165672A JP 7217779 A JP7217779 A JP 7217779A JP 7217779 A JP7217779 A JP 7217779A JP S55165672 A JPS55165672 A JP S55165672A
Authority
JP
Japan
Prior art keywords
base
regions
emitter
region
independent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7217779A
Other languages
Japanese (ja)
Other versions
JPS6222458B2 (en
Inventor
Yasutaka Nakatani
Shigeaki Nawata
Haruki Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7217779A priority Critical patent/JPS55165672A/en
Publication of JPS55165672A publication Critical patent/JPS55165672A/en
Publication of JPS6222458B2 publication Critical patent/JPS6222458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To magnify the safe operation range by a method wherein the base region that makes up a power transistor of multiemitter structure is divided into plural regions, each of which is independent of the others, for each emitter region and adjacent base regions are connected to each other with a base ballast resistance. CONSTITUTION:The plural emitter regions 13-1-13-4 are formed in the semiconductor substrate 11 that is also used as the collector region, the base regions are provided which surround these emitter regions and the structure of the base regions is as follows. The emitter regions 13-1-13-4 are surrounded by the base regions 32-1-32-4 each of which is independent of the others, adjacent base regions are connected to each other with the base ballast resistances 40 that are dispersedly arranged. After this, the emitter electrode 18 is provided to each emitter region and the base electrode 15 to the base region. In this way, since the base electrodes 15 are connected to the base regions 32-1-32-4 through the base contacts 14 and the resistances 40, the safe operation range can be magnified without damage to the high frequency characteristic.
JP7217779A 1979-06-11 1979-06-11 Semiconductor device Granted JPS55165672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7217779A JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7217779A JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165672A true JPS55165672A (en) 1980-12-24
JPS6222458B2 JPS6222458B2 (en) 1987-05-18

Family

ID=13481675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7217779A Granted JPS55165672A (en) 1979-06-11 1979-06-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165672A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167368A (en) * 1980-09-19 1985-08-30 シ−メンス、アクチエンゲゼルシヤフト Integrated bipolar power transistor device
JPS62142356A (en) * 1985-12-17 1987-06-25 Sanken Electric Co Ltd Transistor
JPS62298172A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPS63164252U (en) * 1987-02-27 1988-10-26
JPS63301563A (en) * 1987-01-29 1988-12-08 Fuji Electric Co Ltd Gate turn off thyrister
EP0404095A2 (en) * 1989-06-22 1990-12-27 STMicroelectronics S.r.l. Integratable power transistor with optimization of direct secondary breakdown phenomena
EP0597397A2 (en) * 1992-11-09 1994-05-18 Texas Instruments Incorporated Tramsistor having a base ballast impedance
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106777A (en) * 1973-02-09 1974-10-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49106777A (en) * 1973-02-09 1974-10-09

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0332216B2 (en) * 1980-09-19 1991-05-10 Siemens Ag
JPS60167368A (en) * 1980-09-19 1985-08-30 シ−メンス、アクチエンゲゼルシヤフト Integrated bipolar power transistor device
JPS62142356A (en) * 1985-12-17 1987-06-25 Sanken Electric Co Ltd Transistor
JPS62298172A (en) * 1986-06-17 1987-12-25 Sanyo Electric Co Ltd Transistor
JPH0587136B2 (en) * 1986-06-17 1993-12-15 Sanyo Electric Co
JPS63301563A (en) * 1987-01-29 1988-12-08 Fuji Electric Co Ltd Gate turn off thyrister
JPS63164252U (en) * 1987-02-27 1988-10-26
EP0404095A2 (en) * 1989-06-22 1990-12-27 STMicroelectronics S.r.l. Integratable power transistor with optimization of direct secondary breakdown phenomena
EP0597397A2 (en) * 1992-11-09 1994-05-18 Texas Instruments Incorporated Tramsistor having a base ballast impedance
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
EP0597397A3 (en) * 1992-11-09 1995-01-04 Texas Instruments Inc Transistor having a base ballast impedance.
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors

Also Published As

Publication number Publication date
JPS6222458B2 (en) 1987-05-18

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