JPS5691459A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5691459A JPS5691459A JP16866379A JP16866379A JPS5691459A JP S5691459 A JPS5691459 A JP S5691459A JP 16866379 A JP16866379 A JP 16866379A JP 16866379 A JP16866379 A JP 16866379A JP S5691459 A JPS5691459 A JP S5691459A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- dispersion
- resistance element
- semiconductor substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000006185 dispersion Substances 0.000 abstract 5
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 238000007373 indentation Methods 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a resistance element of high resistance value without increasing area of occupancy, by forming a dispersion resistance on an indented surface provided on a semiconductor substrate and then forming a resistance element of amorphous layer overlapping the dispersion layer horizontally through an insulation layer. CONSTITUTION:An indentation is provided in surface region on a semiconductor substrate 1, and a dispersion resistance element connecting surface of this indentation to the surface region is formed by a P type regions 2 and 3. Further, an ion injection resistance 8 is formed on an amorphous silicon layer 4 through an insulation layer 7 in the surface region of the semiconductor substrate 1. And one end of the aforementioned dispersion resistance element is connected to one end of the ion injection resistance 8 by aluminum 9' forming a resistance element which directly connects the dispersion resistance of the P type regions 2 and 3 to the injection resistance 8 for the amorphous silicon layer 4. At the same time, aluminum electrodes 9 are formed on both ends of this resistance element to obtain a both-end electrode of series connection resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16866379A JPS5691459A (en) | 1979-12-25 | 1979-12-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16866379A JPS5691459A (en) | 1979-12-25 | 1979-12-25 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5691459A true JPS5691459A (en) | 1981-07-24 |
JPS6248904B2 JPS6248904B2 (en) | 1987-10-16 |
Family
ID=15872186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16866379A Granted JPS5691459A (en) | 1979-12-25 | 1979-12-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5691459A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4633288A (en) * | 1982-07-16 | 1986-12-30 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low light power requirement and high critical voltage rise rate |
JPH04151810A (en) * | 1990-10-15 | 1992-05-25 | Matsushita Electric Works Ltd | Planar transformer |
US5316978A (en) * | 1993-03-25 | 1994-05-31 | Northern Telecom Limited | Forming resistors for intergrated circuits |
-
1979
- 1979-12-25 JP JP16866379A patent/JPS5691459A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4633288A (en) * | 1982-07-16 | 1986-12-30 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low light power requirement and high critical voltage rise rate |
JPH04151810A (en) * | 1990-10-15 | 1992-05-25 | Matsushita Electric Works Ltd | Planar transformer |
US5316978A (en) * | 1993-03-25 | 1994-05-31 | Northern Telecom Limited | Forming resistors for intergrated circuits |
Also Published As
Publication number | Publication date |
---|---|
JPS6248904B2 (en) | 1987-10-16 |
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