FR3096855B1 - Capteur d'image et son procédé de commande - Google Patents

Capteur d'image et son procédé de commande Download PDF

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Publication number
FR3096855B1
FR3096855B1 FR1905868A FR1905868A FR3096855B1 FR 3096855 B1 FR3096855 B1 FR 3096855B1 FR 1905868 A FR1905868 A FR 1905868A FR 1905868 A FR1905868 A FR 1905868A FR 3096855 B1 FR3096855 B1 FR 3096855B1
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FR
France
Prior art keywords
pixel
node
image sensor
driving method
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1905868A
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English (en)
Other versions
FR3096855A1 (fr
Inventor
Pierre Malinge
Frederic Lalanne
Laurent Simony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1905868A priority Critical patent/FR3096855B1/fr
Priority to CN202020983161.8U priority patent/CN213403240U/zh
Priority to CN202010491656.3A priority patent/CN112040152B/zh
Priority to US16/890,877 priority patent/US11451730B2/en
Publication of FR3096855A1 publication Critical patent/FR3096855A1/fr
Application granted granted Critical
Publication of FR3096855B1 publication Critical patent/FR3096855B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Capteur d'image et son procédé de commande La présente description concerne un capteur d'image comprenant des pixels (1) comportant chacun :un premier transistor (118) et un premier interrupteur (120) connectés en série entre un premier noeud (124) d'application d'un potentiel (VD) et un noeud (122) interne du pixel, une grille du premier transistor (118) étant couplée à un noeud (106) de diffusion flottant du pixel ;un élément capacitif (110) dont une première borne est connectée au noeud de diffusion flottant du pixel ; et plusieurs ensembles (A, B) comprenant chacun une capacité (128) connectée en série avec un deuxième interrupteur (130) reliant la capacité au noeud interne (122),le capteur comprenant en outre un circuit (150) configuré pour, lors de chaque mémorisation d'une tension dans un des ensembles (A, B) d'un pixel, commander une augmentation d'une valeur déterminée d'une différence de potentiel entre le noeud de diffusion flottant et le noeud interne du pixel. Figure pour l'abrégé : Fig. 1
FR1905868A 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande Active FR3096855B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1905868A FR3096855B1 (fr) 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande
CN202020983161.8U CN213403240U (zh) 2019-06-03 2020-06-02 图像传感器
CN202010491656.3A CN112040152B (zh) 2019-06-03 2020-06-02 图像传感器及其控制方法
US16/890,877 US11451730B2 (en) 2019-06-03 2020-06-02 Image sensor using a global shutter and method for controlling same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905868 2019-06-03
FR1905868A FR3096855B1 (fr) 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande

Publications (2)

Publication Number Publication Date
FR3096855A1 FR3096855A1 (fr) 2020-12-04
FR3096855B1 true FR3096855B1 (fr) 2022-08-05

Family

ID=68138372

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1905868A Active FR3096855B1 (fr) 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande

Country Status (3)

Country Link
US (1) US11451730B2 (fr)
CN (2) CN112040152B (fr)
FR (1) FR3096855B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3096855B1 (fr) * 2019-06-03 2022-08-05 St Microelectronics Grenoble 2 Capteur d'image et son procédé de commande
FR3096856B1 (fr) 2019-06-03 2021-06-25 St Microelectronics Grenoble 2 Capteur d'image et son procédé de commande

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6903771B2 (en) 2000-03-02 2005-06-07 Canon Kabushiki Kaisha Image pickup apparatus
US6727946B1 (en) 1999-12-14 2004-04-27 Omnivision Technologies, Inc. APS soft reset circuit for reducing image lag
US6919551B2 (en) 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
US7365784B2 (en) 2003-04-15 2008-04-29 Micron Technology, Inc. Column sample-and-hold cell for CMOS APS sensor
FR2854529A1 (fr) 2003-04-30 2004-11-05 St Microelectronics Sa Procede d'echantillonnage du signal delivre par un pixel actif d'un capteur d'image, et capteur correspondant
GB0411648D0 (en) 2004-05-25 2004-06-30 Fillfactory N V Method and pixel for performing correlated double sampling
US20070041063A1 (en) * 2005-08-18 2007-02-22 Matsushita Electric Industrial Co., Ltd. Image sensor
US20080122962A1 (en) 2006-11-29 2008-05-29 Omnivision Technologies, Inc. Image sensors with output noise reduction mechanisms
EP2109306B1 (fr) 2008-04-07 2015-03-11 CMOSIS nv Réseau de pixels avec obturateur global
TWI433307B (zh) * 2008-10-22 2014-04-01 Sony Corp 固態影像感測器、其驅動方法、成像裝置及電子器件
JP2011229120A (ja) 2010-03-30 2011-11-10 Sony Corp 固体撮像装置、固体撮像装置の信号処理方法、及び、電子機器
WO2011155442A1 (fr) * 2010-06-11 2011-12-15 株式会社ブルックマンテクノロジ Imageur à semi-conducteurs de type amplification
FR2973162B1 (fr) 2011-03-23 2013-11-22 E2V Semiconductors Capteur d'image a tres haute dynamique
KR20130072804A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 신호 샘플링 회로 및 이를 포함하는 이미지 센서
CN103259985B (zh) * 2013-05-17 2016-08-17 昆山锐芯微电子有限公司 Cmos图像传感器、像素单元及其控制方法
US10154222B2 (en) 2014-11-17 2018-12-11 Tohoku University Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor
US9602750B2 (en) * 2014-11-25 2017-03-21 Semiconductor Components Industries, Llc Image sensor pixels having built-in variable gain feedback amplifier circuitry
US9591245B2 (en) * 2015-04-14 2017-03-07 Semiconductor Components Industries, Llc Image sensor pixels with adjustable body bias
CA3047698C (fr) * 2016-12-19 2020-03-24 BAE Systems Imaging Solutions Inc. Schema d'obturateur global reduisant les effets d'un courant d'obscurite
FR3094598A1 (fr) 2019-03-29 2020-10-02 Stmicroelectronics (Grenoble 2) Sas Pixel et son procédé de commande
FR3096856B1 (fr) 2019-06-03 2021-06-25 St Microelectronics Grenoble 2 Capteur d'image et son procédé de commande
FR3096855B1 (fr) * 2019-06-03 2022-08-05 St Microelectronics Grenoble 2 Capteur d'image et son procédé de commande

Also Published As

Publication number Publication date
FR3096855A1 (fr) 2020-12-04
CN112040152B (zh) 2023-08-18
CN112040152A (zh) 2020-12-04
US11451730B2 (en) 2022-09-20
CN213403240U (zh) 2021-06-08
US20200382738A1 (en) 2020-12-03

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