FR3091006B1 - Procede de remplissage selectif, par un liquide de remplissage, d’un groupe de cavites parmi une pluralite de cavites - Google Patents

Procede de remplissage selectif, par un liquide de remplissage, d’un groupe de cavites parmi une pluralite de cavites Download PDF

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Publication number
FR3091006B1
FR3091006B1 FR1873500A FR1873500A FR3091006B1 FR 3091006 B1 FR3091006 B1 FR 3091006B1 FR 1873500 A FR1873500 A FR 1873500A FR 1873500 A FR1873500 A FR 1873500A FR 3091006 B1 FR3091006 B1 FR 3091006B1
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France
Prior art keywords
cavities
filling
liquid
group
selective
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FR1873500A
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English (en)
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FR3091006A1 (fr
Inventor
Emmanuel Ollier
Fabrice Emieux
Frédéric Roux
Ulrich Soupremanien
Sylvia Scaringella
Tiphaine Dupont
Clémence Tallet
Abdelhay Aboulaich
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Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1873500A priority Critical patent/FR3091006B1/fr
Priority to PCT/FR2019/052849 priority patent/WO2020128182A1/fr
Priority to EP19835709.7A priority patent/EP3881362A1/fr
Priority to CN201980088429.1A priority patent/CN113302752A/zh
Priority to KR1020217019037A priority patent/KR20210105902A/ko
Priority to US17/415,444 priority patent/US20220029048A1/en
Publication of FR3091006A1 publication Critical patent/FR3091006A1/fr
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Publication of FR3091006B1 publication Critical patent/FR3091006B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Abstract

L’invention concerne un procédé de remplissage sélectif, par un liquide de remplissage (15), d’une première cavité (11), parmi des cavités (10) débouchant chacune au niveau d’une face avant (21), d’un substrat, chacune des cavités, le procédé comprenant les étapes :a) une étape de traitement destinée à modifier l’énergie de surface de la première surface interne (121) de la première cavité (11) ou l’énergie de surface des secondes surfaces internes (122), des autres cavités, de sorte que la première surface (121) présente une première énergie de surface et les secondes surfaces une seconde énergie de surface ;b) une étape comprenant une séquence d’étalement du liquide de remplissage (15) ;la première et la seconde énergie étant ajustées de sorte que la première et les secondes surfaces exercent sur ledit liquide (15), respectivement, un effet attractif et un effet répulsif. Figure pour l’abrégé : figure 2d.
FR1873500A 2018-12-20 2018-12-20 Procede de remplissage selectif, par un liquide de remplissage, d’un groupe de cavites parmi une pluralite de cavites Active FR3091006B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1873500A FR3091006B1 (fr) 2018-12-20 2018-12-20 Procede de remplissage selectif, par un liquide de remplissage, d’un groupe de cavites parmi une pluralite de cavites
PCT/FR2019/052849 WO2020128182A1 (fr) 2018-12-20 2019-11-29 Procede de remplissage selectif, par un liquide de remplissage, d'un groupe de cavites parmi une pluralite de cavites
EP19835709.7A EP3881362A1 (fr) 2018-12-20 2019-11-29 Procede de remplissage selectif, par un liquide de remplissage, d'un groupe de cavites parmi une pluralite de cavites
CN201980088429.1A CN113302752A (zh) 2018-12-20 2019-11-29 利用填充液体从多个腔中选择性地填充一组腔的方法
KR1020217019037A KR20210105902A (ko) 2018-12-20 2019-11-29 복수의 공동들 중 일 군의 공동들을 충전 액체로 선택적으로 충전하기 위한 방법
US17/415,444 US20220029048A1 (en) 2018-12-20 2019-11-29 Method for selectively filling, with a filling liquid, a group of cavities from among a plurality of cavities

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1873500A FR3091006B1 (fr) 2018-12-20 2018-12-20 Procede de remplissage selectif, par un liquide de remplissage, d’un groupe de cavites parmi une pluralite de cavites

Publications (2)

Publication Number Publication Date
FR3091006A1 FR3091006A1 (fr) 2020-06-26
FR3091006B1 true FR3091006B1 (fr) 2021-01-15

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FR1873500A Active FR3091006B1 (fr) 2018-12-20 2018-12-20 Procede de remplissage selectif, par un liquide de remplissage, d’un groupe de cavites parmi une pluralite de cavites

Country Status (6)

Country Link
US (1) US20220029048A1 (fr)
EP (1) EP3881362A1 (fr)
KR (1) KR20210105902A (fr)
CN (1) CN113302752A (fr)
FR (1) FR3091006B1 (fr)
WO (1) WO2020128182A1 (fr)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2430547A (en) * 2005-09-20 2007-03-28 Seiko Epson Corp A method of producing a substrate having areas of different hydrophilicity and/or oleophilicity on the same surface
KR100904588B1 (ko) * 2007-07-05 2009-06-25 삼성전자주식회사 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자
KR101077424B1 (ko) * 2010-07-23 2011-10-26 삼성전기주식회사 터치패널 및 그 제조방법
CN103562754B (zh) * 2011-05-31 2015-08-19 夏普株式会社 彩色滤光片基板的制造方法、显示装置的制造方法、彩色滤光片基板以及显示装置
KR101335921B1 (ko) * 2011-10-06 2013-12-03 삼성전자주식회사 발광 다이오드 패키지 및 그의 제조방법
KR101957701B1 (ko) * 2012-11-14 2019-03-14 삼성전자주식회사 발광소자 패키지 및 그 제조방법
FR3012676A1 (fr) 2013-10-25 2015-05-01 Commissariat Energie Atomique Diode electroluminescente a puits quantiques separes par des couches barrieres d'ingan a compositions d'indium variables
KR102360957B1 (ko) * 2015-03-27 2022-02-11 삼성디스플레이 주식회사 발광 다이오드 패키지
CN104932136B (zh) * 2015-07-01 2018-01-26 合肥鑫晟光电科技有限公司 彩膜基板及其制作方法、显示面板和显示装置
CN105204104B (zh) * 2015-10-30 2018-05-25 京东方科技集团股份有限公司 滤光片及其制作方法、显示基板及显示装置
FR3046021B1 (fr) 2015-12-17 2017-12-22 Commissariat Energie Atomique Dispositif composite d'absorption thermique et methode d'obtention
FR3053530B1 (fr) * 2016-06-30 2018-07-27 Aledia Dispositif optoelectronique a pixels a contraste et luminance ameliores
KR102291493B1 (ko) * 2016-08-11 2021-08-20 삼성디스플레이 주식회사 컬러 필터 및 이를 포함하는 표시 장치
US20180341055A1 (en) * 2017-05-23 2018-11-29 Intematix Corporation Color Liquid Crystal Displays and Display Backlights
JP2019023579A (ja) * 2017-07-24 2019-02-14 コニカミノルタ株式会社 シンチレータ

Also Published As

Publication number Publication date
WO2020128182A1 (fr) 2020-06-25
EP3881362A1 (fr) 2021-09-22
US20220029048A1 (en) 2022-01-27
FR3091006A1 (fr) 2020-06-26
KR20210105902A (ko) 2021-08-27
CN113302752A (zh) 2021-08-24

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