FR3077677B1 - Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant - Google Patents

Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant Download PDF

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Publication number
FR3077677B1
FR3077677B1 FR1850969A FR1850969A FR3077677B1 FR 3077677 B1 FR3077677 B1 FR 3077677B1 FR 1850969 A FR1850969 A FR 1850969A FR 1850969 A FR1850969 A FR 1850969A FR 3077677 B1 FR3077677 B1 FR 3077677B1
Authority
FR
France
Prior art keywords
circuit
ram
precharge
integrated circuit
supply mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1850969A
Other languages
English (en)
Other versions
FR3077677A1 (fr
Inventor
Laurent Truphemus
Sebastien Ortet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1850969A priority Critical patent/FR3077677B1/fr
Priority to CN201920114365.5U priority patent/CN209298964U/zh
Priority to CN201910064629.5A priority patent/CN110120699B/zh
Priority to US16/267,968 priority patent/US11139676B2/en
Publication of FR3077677A1 publication Critical patent/FR3077677A1/fr
Application granted granted Critical
Publication of FR3077677B1 publication Critical patent/FR3077677B1/fr
Priority to US17/459,465 priority patent/US11670956B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
    • H02J9/005—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting using a power saving mode
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/263—Arrangements for using multiple switchable power supplies, e.g. battery and AC
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/30—Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
    • H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
    • H02J9/06—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems
    • H02J9/061—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Sources (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)

Abstract

Circuit intégré comportant un étage d'alimentation principal (AlmP), un étage d'alimentation secondaire (AlmS), un circuit de commutation d'alimentation (SWi), un circuit de précharge (CPrch), et un circuit de mémoire volatile (RAM), le circuit de commutation (SWi) étant configuré pour placer le circuit de mémoire (RAM) soit dans un mode d'alimentation principal (MAlmP), soit dans un mode d'alimentation secondaire (MAlmS), le circuit de précharge (CPrch) étant configuré pour précharger un nœud d'alimentation secondaire (NS) à une tension d'alimentation secondaire (VregS) pendant le mode d'alimentation principal (MAlmP), dans lequel le circuit de précharge (CPrch) comporte un circuit-réplique (RAM-R) ayant la même configuration qu'au moins une partie du circuit de mémoire (RAM), et est configuré pour, lors de ladite précharge, écouler un courant de précharge (Iprch) représentatif d'un courant (Is) écoulé par le circuit de mémoire (RAM) dans le mode d'alimentation secondaire (MAlmS).
FR1850969A 2018-02-06 2018-02-06 Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant Active FR3077677B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1850969A FR3077677B1 (fr) 2018-02-06 2018-02-06 Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant
CN201920114365.5U CN209298964U (zh) 2018-02-06 2019-01-23 集成电路和电子装置
CN201910064629.5A CN110120699B (zh) 2018-02-06 2019-01-23 用于对集成电路电源预充电的方法和对应的集成电路
US16/267,968 US11139676B2 (en) 2018-02-06 2019-02-05 Method for precharging an integrated-circuit supply, and corresponding integrated circuit
US17/459,465 US11670956B2 (en) 2018-02-06 2021-08-27 Method for precharging an integrated-circuit supply, and corresponding integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1850969 2018-02-06
FR1850969A FR3077677B1 (fr) 2018-02-06 2018-02-06 Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant

Publications (2)

Publication Number Publication Date
FR3077677A1 FR3077677A1 (fr) 2019-08-09
FR3077677B1 true FR3077677B1 (fr) 2020-03-06

Family

ID=62683294

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1850969A Active FR3077677B1 (fr) 2018-02-06 2018-02-06 Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant

Country Status (3)

Country Link
US (2) US11139676B2 (fr)
CN (2) CN209298964U (fr)
FR (1) FR3077677B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3077677B1 (fr) * 2018-02-06 2020-03-06 Stmicroelectronics (Rousset) Sas Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant

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* Cited by examiner, † Cited by third party
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JP3843145B2 (ja) * 1995-12-25 2006-11-08 株式会社ルネサステクノロジ 同期型半導体記憶装置
US6333874B2 (en) * 2000-03-30 2001-12-25 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device having normal and standby modes, semiconductor integrated circuit and mobile electronic unit
CA2310295C (fr) * 2000-05-31 2010-10-05 Mosaid Technologies Incorporated Circuit et methode de detection de concordance multiple
JP2002313412A (ja) * 2001-04-10 2002-10-25 Matsushita Electric Ind Co Ltd 二次電池の活性化方法
US6751109B2 (en) * 2001-10-31 2004-06-15 Mobility Electronics, Inc. Dual input AC/DC/ battery operated power supply
KR100456595B1 (ko) * 2002-04-25 2004-11-09 삼성전자주식회사 이중 전압 포트를 갖는 메모리 장치 및 이를 포함하는메모리 시스템
KR100539964B1 (ko) * 2003-06-27 2005-12-28 주식회사 하이닉스반도체 반도체 메모리 소자의 프리차지 장치 및 이를 이용한 프리차지 방법
US7170197B2 (en) * 2004-02-17 2007-01-30 Agere Systems Inc. Switching power supply controller with built-in supply switching
US20070079153A1 (en) * 2005-10-05 2007-04-05 Dell Products L.P. Information handling system, current and voltage mode power adapter, and method of operation
JP5034379B2 (ja) * 2006-08-30 2012-09-26 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP5098367B2 (ja) * 2007-03-06 2012-12-12 富士通セミコンダクター株式会社 電源電圧調整回路およびマイクロコンピュータ
US7679948B2 (en) * 2008-06-05 2010-03-16 Sun Microsystems, Inc. Write and read assist circuit for SRAM with power recycling
JP5523116B2 (ja) * 2009-01-28 2014-06-18 京セラ株式会社 電子機器、電源状態通知方法及び電源状態通知プログラム
US8605534B2 (en) * 2009-09-09 2013-12-10 Marvell World Trade Ltd. Circuits, architectures, apparatuses, systems, algorithms, and methods for memory with multiple power supplies and/or multiple low power modes
US20110157964A1 (en) * 2009-12-30 2011-06-30 Mcpartland Richard J Memory Cell Using Leakage Current Storage Mechanism
US8566620B2 (en) * 2010-07-29 2013-10-22 Freescale Semiconductor, Inc. Data processing having multiple low power modes and method therefor
JP5789803B2 (ja) * 2011-12-06 2015-10-07 株式会社ソシオネクスト 半導体メモリおよびシステム
JP6367805B2 (ja) * 2013-07-31 2018-08-01 三洋電機株式会社 車両用電源システム
KR20160012392A (ko) * 2014-07-24 2016-02-03 삼성전자주식회사 메모리 장치의 동작 방법 및 이를 포함하는 메모리 장치의 리프레시 방법
US9916874B2 (en) 2014-08-15 2018-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Memory architecture having first and second voltages
CN104993574B (zh) * 2015-07-06 2017-06-06 上海巨微集成电路有限公司 一种适用于otp存储器的电源切换电路
US9715924B2 (en) * 2015-10-22 2017-07-25 Sandisk Technologies Llc Three dimensional non-volatile memory with current sensing programming status
FR3050307A1 (fr) * 2016-04-18 2017-10-20 Stmicroelectronics Rousset Circuit amplificateur de lecture perfectionne pour un dispositif de memoire, en particulier un dispositif de memoire non volatile
US20180331569A1 (en) * 2017-05-15 2018-11-15 Vertiv Srl Technique For Lowering Inrush Current To An Uninterruptible Power Supply With A Transformer
FR3077677B1 (fr) * 2018-02-06 2020-03-06 Stmicroelectronics (Rousset) Sas Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant

Also Published As

Publication number Publication date
CN110120699A (zh) 2019-08-13
US11139676B2 (en) 2021-10-05
US20190245377A1 (en) 2019-08-08
CN209298964U (zh) 2019-08-23
FR3077677A1 (fr) 2019-08-09
CN110120699B (zh) 2023-08-08
US20210391744A1 (en) 2021-12-16
US11670956B2 (en) 2023-06-06

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