FR2972724B1 - Substrat pour cellule photovoltaique - Google Patents

Substrat pour cellule photovoltaique

Info

Publication number
FR2972724B1
FR2972724B1 FR1152093A FR1152093A FR2972724B1 FR 2972724 B1 FR2972724 B1 FR 2972724B1 FR 1152093 A FR1152093 A FR 1152093A FR 1152093 A FR1152093 A FR 1152093A FR 2972724 B1 FR2972724 B1 FR 2972724B1
Authority
FR
France
Prior art keywords
substrate
photovoltaic cell
photovoltaic
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1152093A
Other languages
English (en)
Other versions
FR2972724A1 (fr
Inventor
Octavio Cintora
Dominique Sachot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1152093A priority Critical patent/FR2972724B1/fr
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to KR1020137024027A priority patent/KR20140021559A/ko
Priority to JP2013558485A priority patent/JP6023098B2/ja
Priority to US13/984,859 priority patent/US20130313671A1/en
Priority to CN2012800130432A priority patent/CN103402936A/zh
Priority to EP12714772.6A priority patent/EP2686278A1/fr
Priority to EA201391307A priority patent/EA024931B1/ru
Priority to PCT/FR2012/050528 priority patent/WO2012123677A1/fr
Publication of FR2972724A1 publication Critical patent/FR2972724A1/fr
Application granted granted Critical
Publication of FR2972724B1 publication Critical patent/FR2972724B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)
FR1152093A 2011-03-15 2011-03-15 Substrat pour cellule photovoltaique Active FR2972724B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1152093A FR2972724B1 (fr) 2011-03-15 2011-03-15 Substrat pour cellule photovoltaique
JP2013558485A JP6023098B2 (ja) 2011-03-15 2012-03-14 半導体デバイスを含む光電池及び光起電モジュール
US13/984,859 US20130313671A1 (en) 2011-03-15 2012-03-14 Substrate for a photovoltaic cell
CN2012800130432A CN103402936A (zh) 2011-03-15 2012-03-14 用于光电池的基材
KR1020137024027A KR20140021559A (ko) 2011-03-15 2012-03-14 광기전력 전지용 기판
EP12714772.6A EP2686278A1 (fr) 2011-03-15 2012-03-14 Substrat pour cellule photovoltaïque
EA201391307A EA024931B1 (ru) 2011-03-15 2012-03-14 Фотоэлемент
PCT/FR2012/050528 WO2012123677A1 (fr) 2011-03-15 2012-03-14 Substrat pour cellule photovoltaïque

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152093A FR2972724B1 (fr) 2011-03-15 2011-03-15 Substrat pour cellule photovoltaique

Publications (2)

Publication Number Publication Date
FR2972724A1 FR2972724A1 (fr) 2012-09-21
FR2972724B1 true FR2972724B1 (fr) 2016-09-16

Family

ID=45974397

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152093A Active FR2972724B1 (fr) 2011-03-15 2011-03-15 Substrat pour cellule photovoltaique

Country Status (8)

Country Link
US (1) US20130313671A1 (fr)
EP (1) EP2686278A1 (fr)
JP (1) JP6023098B2 (fr)
KR (1) KR20140021559A (fr)
CN (1) CN103402936A (fr)
EA (1) EA024931B1 (fr)
FR (1) FR2972724B1 (fr)
WO (1) WO2012123677A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016084247A (ja) * 2014-10-23 2016-05-19 旭硝子株式会社 ガラス板
WO2016088652A1 (fr) * 2014-12-02 2016-06-09 旭硝子株式会社 Verre pour trempe chimique et procédé de fabrication de verre pour trempe chimique et verre trempé chimiquement et dispositif d'affichage d'image équipé de celui-ci
GB201505091D0 (en) 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
GB201505101D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
US11680005B2 (en) * 2020-02-12 2023-06-20 Owens-Brockway Glass Container Inc. Feed material for producing flint glass using submerged combustion melting

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4298389A (en) * 1980-02-20 1981-11-03 Corning Glass Works High transmission glasses for solar applications
JPH0779002A (ja) * 1993-06-30 1995-03-20 Sanyo Electric Co Ltd 光起電力装置の製造方法
US6313053B1 (en) * 1997-10-20 2001-11-06 Ppg Industries Ohio, Inc. Infrared and ultraviolet radiation absorbing blue glass composition
JPH11135819A (ja) * 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 化合物薄膜太陽電池
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
FR2837817B1 (fr) * 2002-03-27 2005-02-11 Saint Gobain Composition de verre destinee a la fabrication de vitrage
JP4446683B2 (ja) * 2002-05-24 2010-04-07 Ｈｏｙａ株式会社 磁気記録媒体用ガラス基板
JP4656863B2 (ja) * 2003-06-06 2011-03-23 Ｈｏｙａ株式会社 ジルコニウムを含むガラス組成物、化学強化ガラス物品、磁気記録媒体用ガラス基板、およびガラス板の製造方法
JP2008280189A (ja) * 2007-05-08 2008-11-20 Nippon Electric Glass Co Ltd 太陽電池用ガラス基板およびその製造方法
FR2921357B1 (fr) * 2007-09-21 2011-01-21 Saint Gobain Composition de verre silico-sodo-calcique
TW200926422A (en) * 2007-12-12 2009-06-16 wei-hong Luo Nature-light energy cell and its transparent light-transferring layer
WO2009154314A1 (fr) * 2008-06-17 2009-12-23 日本電気硝子株式会社 Substrat pour cellule solaire et électrode semiconductrice d'oxyde destinée à une cellule solaire à colorant
DE102008043317B4 (de) * 2008-10-30 2013-08-08 Schott Ag Verwendung eines solarisationsbeständigen Glases mit einer definierten Steigung der UV-Kante für einen Strahler für Bewitterungsanlagen
FR2942623B1 (fr) * 2009-02-27 2012-05-25 Saint Gobain Feuille de verre
DE102009050987B3 (de) * 2009-05-12 2010-10-07 Schott Ag Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle
JP5642363B2 (ja) * 2009-08-14 2014-12-17 日本板硝子株式会社 ガラス基板
EP2508493A4 (fr) * 2009-12-04 2013-09-04 Asahi Glass Co Ltd Plaque de verre et son procédé de fabrication

Also Published As

Publication number Publication date
KR20140021559A (ko) 2014-02-20
EA024931B1 (ru) 2016-11-30
JP2014509583A (ja) 2014-04-21
US20130313671A1 (en) 2013-11-28
WO2012123677A1 (fr) 2012-09-20
CN103402936A (zh) 2013-11-20
FR2972724A1 (fr) 2012-09-21
EP2686278A1 (fr) 2014-01-22
EA201391307A1 (ru) 2014-01-30
JP6023098B2 (ja) 2016-11-09

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