EA201391307A1 - Подложка фотоэлемента - Google Patents

Подложка фотоэлемента

Info

Publication number
EA201391307A1
EA201391307A1 EA201391307A EA201391307A EA201391307A1 EA 201391307 A1 EA201391307 A1 EA 201391307A1 EA 201391307 A EA201391307 A EA 201391307A EA 201391307 A EA201391307 A EA 201391307A EA 201391307 A1 EA201391307 A1 EA 201391307A1
Authority
EA
Eurasian Patent Office
Prior art keywords
earth
picture photo
photo
picture
varies
Prior art date
Application number
EA201391307A
Other languages
English (en)
Other versions
EA024931B1 (ru
Inventor
Октавио Синтора
Доминик Сашо
Original Assignee
Сэн-Гобэн Гласс Франс
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сэн-Гобэн Гласс Франс filed Critical Сэн-Гобэн Гласс Франс
Publication of EA201391307A1 publication Critical patent/EA201391307A1/ru
Publication of EA024931B1 publication Critical patent/EA024931B1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Изобретение относится к подложке для фотоэлемента, содержащей по меньшей мере один слой флоат-стекла, снабженный на одной поверхности по меньшей мере одним электродом, отличающейся тем, что указанное стекло имеет химическую композицию, содержащую следующие компоненты, весовое содержание которых изменяется в следующих пределах, %:
EA201391307A 2011-03-15 2012-03-14 Фотоэлемент EA024931B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1152093A FR2972724B1 (fr) 2011-03-15 2011-03-15 Substrat pour cellule photovoltaique
PCT/FR2012/050528 WO2012123677A1 (fr) 2011-03-15 2012-03-14 Substrat pour cellule photovoltaïque

Publications (2)

Publication Number Publication Date
EA201391307A1 true EA201391307A1 (ru) 2014-01-30
EA024931B1 EA024931B1 (ru) 2016-11-30

Family

ID=45974397

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201391307A EA024931B1 (ru) 2011-03-15 2012-03-14 Фотоэлемент

Country Status (8)

Country Link
US (1) US20130313671A1 (ru)
EP (1) EP2686278A1 (ru)
JP (1) JP6023098B2 (ru)
KR (1) KR20140021559A (ru)
CN (1) CN103402936A (ru)
EA (1) EA024931B1 (ru)
FR (1) FR2972724B1 (ru)
WO (1) WO2012123677A1 (ru)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016084247A (ja) * 2014-10-23 2016-05-19 旭硝子株式会社 ガラス板
CN107001109B (zh) * 2014-12-02 2020-02-14 Ａｇｃ株式会社 化学强化用玻璃和化学强化用玻璃的制造方法、以及化学强化玻璃和具有该化学强化玻璃的图像显示装置
GB201505101D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
GB201505091D0 (en) 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
US11680005B2 (en) * 2020-02-12 2023-06-20 Owens-Brockway Glass Container Inc. Feed material for producing flint glass using submerged combustion melting

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4298389A (en) * 1980-02-20 1981-11-03 Corning Glass Works High transmission glasses for solar applications
JPH0779002A (ja) * 1993-06-30 1995-03-20 Sanyo Electric Co Ltd 光起電力装置の製造方法
US6313053B1 (en) * 1997-10-20 2001-11-06 Ppg Industries Ohio, Inc. Infrared and ultraviolet radiation absorbing blue glass composition
JPH11135819A (ja) * 1997-10-31 1999-05-21 Matsushita Electric Ind Co Ltd 化合物薄膜太陽電池
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
FR2837817B1 (fr) * 2002-03-27 2005-02-11 Saint Gobain Composition de verre destinee a la fabrication de vitrage
JP4446683B2 (ja) * 2002-05-24 2010-04-07 Ｈｏｙａ株式会社 磁気記録媒体用ガラス基板
JP4656863B2 (ja) * 2003-06-06 2011-03-23 Ｈｏｙａ株式会社 ジルコニウムを含むガラス組成物、化学強化ガラス物品、磁気記録媒体用ガラス基板、およびガラス板の製造方法
JP2008280189A (ja) * 2007-05-08 2008-11-20 Nippon Electric Glass Co Ltd 太陽電池用ガラス基板およびその製造方法
FR2921357B1 (fr) * 2007-09-21 2011-01-21 Saint Gobain Composition de verre silico-sodo-calcique
TW200926422A (en) * 2007-12-12 2009-06-16 wei-hong Luo Nature-light energy cell and its transparent light-transferring layer
EP2299536A4 (en) * 2008-06-17 2011-12-21 Nippon Electric Glass Co SUBSTRATE FOR SOLAR CELL AND OXIDE SEMICONDUCTOR ELECTRODE FOR COLOR-SENSITIZED SOLAR CELL
DE102008043317B4 (de) * 2008-10-30 2013-08-08 Schott Ag Verwendung eines solarisationsbeständigen Glases mit einer definierten Steigung der UV-Kante für einen Strahler für Bewitterungsanlagen
FR2942623B1 (fr) * 2009-02-27 2012-05-25 Saint Gobain Feuille de verre
DE102009050987B3 (de) * 2009-05-12 2010-10-07 Schott Ag Dünnschichtsolarzelle und Verfahren zur Herstellung einer Dünnschichtsolarzelle
JP5642363B2 (ja) * 2009-08-14 2014-12-17 日本板硝子株式会社 ガラス基板
EP2508493A4 (en) * 2009-12-04 2013-09-04 Asahi Glass Co Ltd GLASS PLATE AND METHOD FOR MANUFACTURING THE SAME

Also Published As

Publication number Publication date
FR2972724B1 (fr) 2016-09-16
KR20140021559A (ko) 2014-02-20
WO2012123677A1 (fr) 2012-09-20
EP2686278A1 (fr) 2014-01-22
JP6023098B2 (ja) 2016-11-09
CN103402936A (zh) 2013-11-20
FR2972724A1 (fr) 2012-09-21
JP2014509583A (ja) 2014-04-21
EA024931B1 (ru) 2016-11-30
US20130313671A1 (en) 2013-11-28

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Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM

MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): RU