GB2497664B - Substrates for semiconductor devices - Google Patents
Substrates for semiconductor devicesInfo
- Publication number
- GB2497664B GB2497664B GB201222329A GB201222329A GB2497664B GB 2497664 B GB2497664 B GB 2497664B GB 201222329 A GB201222329 A GB 201222329A GB 201222329 A GB201222329 A GB 201222329A GB 2497664 B GB2497664 B GB 2497664B
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrates
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161576826P | 2011-12-16 | 2011-12-16 | |
| GB201121659A GB201121659D0 (en) | 2011-12-16 | 2011-12-16 | Substrates for semiconductor devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201222329D0 GB201222329D0 (en) | 2013-01-23 |
| GB2497664A GB2497664A (en) | 2013-06-19 |
| GB2497664B true GB2497664B (en) | 2015-02-11 |
Family
ID=45560565
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB201121659A Ceased GB201121659D0 (en) | 2011-12-16 | 2011-12-16 | Substrates for semiconductor devices |
| GB201222329A Expired - Fee Related GB2497664B (en) | 2011-12-16 | 2012-12-12 | Substrates for semiconductor devices |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB201121659A Ceased GB201121659D0 (en) | 2011-12-16 | 2011-12-16 | Substrates for semiconductor devices |
Country Status (2)
| Country | Link |
|---|---|
| GB (2) | GB201121659D0 (en) |
| WO (1) | WO2013087707A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6300662B2 (en) | 2014-06-20 | 2018-03-28 | オリンパス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| US10692752B2 (en) | 2017-06-20 | 2020-06-23 | Elta Systems Ltd. | Gallium nitride semiconductor structure and process for fabricating thereof |
| IL253085B (en) | 2017-06-20 | 2021-06-30 | Elta Systems Ltd | Gallium nitride semiconductor structure and process for fabricating thereof |
| JP7480699B2 (en) * | 2020-12-24 | 2024-05-10 | 株式会社Sumco | Multilayer substrate using freestanding polycrystalline diamond substrate and its manufacturing method |
| CN112967923B (en) * | 2021-02-05 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | Method for preparing terahertz diode with diamond substrate on large-size wafer |
| CN117646275A (en) * | 2024-01-30 | 2024-03-05 | 北京大学 | Preparation method of large-size high-thermal-conductivity III-nitride epitaxial material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7695564B1 (en) * | 2005-02-03 | 2010-04-13 | Hrl Laboratories, Llc | Thermal management substrate |
| US7749863B1 (en) * | 2005-05-12 | 2010-07-06 | Hrl Laboratories, Llc | Thermal management substrates |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5131963A (en) * | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
| US4981818A (en) | 1990-02-13 | 1991-01-01 | General Electric Company | Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors |
| US5376579A (en) * | 1993-07-02 | 1994-12-27 | The United States Of America As Represented By The Secretary Of The Air Force | Schemes to form silicon-on-diamond structure |
| US6509124B1 (en) * | 1999-11-10 | 2003-01-21 | Shin-Etsu Chemical Co., Ltd. | Method of producing diamond film for lithography |
| US7132309B2 (en) | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
| US7033912B2 (en) | 2004-01-22 | 2006-04-25 | Cree, Inc. | Silicon carbide on diamond substrates and related devices and methods |
| US20060113545A1 (en) | 2004-10-14 | 2006-06-01 | Weber Eicke R | Wide bandgap semiconductor layers on SOD structures |
| GB0505752D0 (en) | 2005-03-21 | 2005-04-27 | Element Six Ltd | Diamond based substrate for gan devices |
| WO2006113539A2 (en) | 2005-04-13 | 2006-10-26 | Group4 Labs, Llc | Semiconductor devices having gallium nitride epilayers on diamond substrates |
-
2011
- 2011-12-16 GB GB201121659A patent/GB201121659D0/en not_active Ceased
-
2012
- 2012-12-12 WO PCT/EP2012/075253 patent/WO2013087707A1/en active Application Filing
- 2012-12-12 GB GB201222329A patent/GB2497664B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7695564B1 (en) * | 2005-02-03 | 2010-04-13 | Hrl Laboratories, Llc | Thermal management substrate |
| US7749863B1 (en) * | 2005-05-12 | 2010-07-06 | Hrl Laboratories, Llc | Thermal management substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201222329D0 (en) | 2013-01-23 |
| GB2497664A (en) | 2013-06-19 |
| WO2013087707A1 (en) | 2013-06-20 |
| GB201121659D0 (en) | 2012-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI563655B (en) | Electrode configurations for semiconductor devices | |
| TWI562156B (en) | Semiconductor device | |
| TWI560842B (en) | Semiconductor device | |
| EP2742526A4 (en) | Wafer carrier | |
| SG11201504823YA (en) | Semiconductor device | |
| SG10201510100UA (en) | Semiconductor device | |
| EP2717300A4 (en) | Semiconductor device | |
| SG11201505099TA (en) | Semiconductor device | |
| SG11201505088UA (en) | Semiconductor device | |
| GB2510468B (en) | Substrates for semiconductor devices | |
| TWI562360B (en) | Semiconductor device | |
| EP2763160A4 (en) | Semiconductor device | |
| EP2779225A4 (en) | Semiconductor device | |
| EP2725623A4 (en) | Semiconductor device | |
| EP2752875A4 (en) | Semiconductor device | |
| EP2720263A4 (en) | Semiconductor device | |
| EP2632237A4 (en) | Wiring substrate | |
| SG11201504615UA (en) | Semiconductor device | |
| GB201118868D0 (en) | Semiconductor compounds | |
| EP2672516A4 (en) | Semiconductor device | |
| TWI562143B (en) | Semiconductor device | |
| EP2698426A4 (en) | Cell-adhering light-controllable substrate | |
| GB2505594B (en) | Microelectronic substrate for alternate package functionality | |
| EP2793260A4 (en) | Semiconductor device | |
| EP2765600A4 (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20161212 |