FR2955211B1 - Element de capteur pour la mesure d'un champ magnetique, capteur realise avec un tel element et son procede de realisation - Google Patents
Element de capteur pour la mesure d'un champ magnetique, capteur realise avec un tel element et son procede de realisationInfo
- Publication number
- FR2955211B1 FR2955211B1 FR1150125A FR1150125A FR2955211B1 FR 2955211 B1 FR2955211 B1 FR 2955211B1 FR 1150125 A FR1150125 A FR 1150125A FR 1150125 A FR1150125 A FR 1150125A FR 2955211 B1 FR2955211 B1 FR 2955211B1
- Authority
- FR
- France
- Prior art keywords
- sensor
- measuring
- producing
- component
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
- G01R33/075—Hall devices configured for spinning current measurements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010000769A DE102010000769A1 (de) | 2010-01-11 | 2010-01-11 | Sensorelement zur Magnetfeldmessung, Magnetfeld-Sensor und Verfahren zur Herstellung eines Sensorelements |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2955211A1 FR2955211A1 (fr) | 2011-07-15 |
FR2955211B1 true FR2955211B1 (fr) | 2016-02-19 |
Family
ID=43975353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1150125A Expired - Fee Related FR2955211B1 (fr) | 2010-01-11 | 2011-01-07 | Element de capteur pour la mesure d'un champ magnetique, capteur realise avec un tel element et son procede de realisation |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN102169955B (de) |
DE (1) | DE102010000769A1 (de) |
FR (1) | FR2955211B1 (de) |
IT (1) | IT1403298B1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2778704B1 (de) * | 2013-03-11 | 2015-09-16 | Ams Ag | Magnetfeldsensorsystem |
DE102013209514A1 (de) | 2013-05-22 | 2014-11-27 | Micronas Gmbh | Dreidimensionaler Hallsensor zum Detektieren eines räumlichen Magnetfeldes |
CN107966669B (zh) * | 2017-12-19 | 2019-11-08 | 大连理工大学 | 适用于高温工作环境的半导体三维霍尔传感器及其制作方法 |
DE102018009110A1 (de) * | 2018-11-21 | 2020-05-28 | Tdk-Micronas Gmbh | SCI-Halbleiterstruktur und Verfahren zur Herstellung einer SOI-Halbleiterstruktur |
DE102018009162A1 (de) * | 2018-11-22 | 2020-05-28 | Tdk-Micronas Gmbh | Halbleitersensorstruktur |
DE102019000165B4 (de) * | 2019-01-14 | 2024-06-27 | Tdk-Micronas Gmbh | Halbleitersensorstruktur |
CN117098447B (zh) * | 2023-10-20 | 2024-02-06 | 北京智芯微电子科技有限公司 | 垂直霍尔传感器及制造方法、芯片 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5543988A (en) * | 1993-04-30 | 1996-08-06 | International Business Machines Corporation | Hall sensor with high spatial resolution in two directions concurrently |
DE10244096B4 (de) * | 2002-09-23 | 2015-05-28 | Robert Bosch Gmbh | Spinning-Current-Hallsensor mit homogener Raumladungszone |
DE10313642A1 (de) | 2003-03-26 | 2004-10-14 | Micronas Gmbh | Offset-reduzierter Hall-sensor |
JP4466276B2 (ja) * | 2004-08-17 | 2010-05-26 | 株式会社デンソー | 縦型ホール素子およびその製造方法 |
JP4674578B2 (ja) * | 2006-01-13 | 2011-04-20 | 株式会社デンソー | 磁気センサ及び磁気検出方法 |
-
2010
- 2010-01-11 DE DE102010000769A patent/DE102010000769A1/de not_active Withdrawn
-
2011
- 2011-01-07 FR FR1150125A patent/FR2955211B1/fr not_active Expired - Fee Related
- 2011-01-10 IT ITMI2011A000008A patent/IT1403298B1/it active
- 2011-01-10 CN CN201110003497.9A patent/CN102169955B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102169955A (zh) | 2011-08-31 |
IT1403298B1 (it) | 2013-10-17 |
CN102169955B (zh) | 2015-09-09 |
ITMI20110008A1 (it) | 2011-07-12 |
FR2955211A1 (fr) | 2011-07-15 |
DE102010000769A1 (de) | 2011-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
ST | Notification of lapse |
Effective date: 20200914 |