FR2950634B1 - Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur - Google Patents
Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteurInfo
- Publication number
- FR2950634B1 FR2950634B1 FR0959677A FR0959677A FR2950634B1 FR 2950634 B1 FR2950634 B1 FR 2950634B1 FR 0959677 A FR0959677 A FR 0959677A FR 0959677 A FR0959677 A FR 0959677A FR 2950634 B1 FR2950634 B1 FR 2950634B1
- Authority
- FR
- France
- Prior art keywords
- activation
- solution
- semiconductor substrate
- oxidized surface
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004913 activation Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1882—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
- C23C18/1696—Control of atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
- C23C18/30—Activating or accelerating or sensitising with palladium or other noble metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0959677A FR2950634B1 (fr) | 2009-09-30 | 2009-12-30 | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur |
JP2012531429A JP5764565B2 (ja) | 2009-09-30 | 2010-09-30 | 半導体基板の酸化された表面を活性化するための溶液及び方法 |
PCT/EP2010/064565 WO2011039310A1 (fr) | 2009-09-30 | 2010-09-30 | Solution et procédé pour activer la surface oxydée d'un substrat semi-conducteur |
CN201080043038.7A CN102575351B (zh) | 2009-09-30 | 2010-09-30 | 使半导体基底的氧化表面活化的溶液和方法 |
EP10759674.4A EP2483442B1 (fr) | 2009-09-30 | 2010-09-30 | Solution et procédé pour activer la surface oxydée d'un substrat semi-conducteur |
CA2774790A CA2774790C (fr) | 2009-09-30 | 2010-09-30 | Solution et procede pour activer la surface oxydee d'un substrat semi-conducteur |
SG2012013660A SG178896A1 (en) | 2009-09-30 | 2010-09-30 | Solution and method for activating the oxidized surface of a semiconductor substrate |
TW099133428A TWI546411B (zh) | 2009-09-30 | 2010-09-30 | 活化半導體基板之氧化表面之溶液及方法 |
US13/393,917 US8883641B2 (en) | 2009-09-30 | 2010-09-30 | Solution and method for activating the oxidized surface of a semiconductor substrate |
KR1020127005776A KR101717316B1 (ko) | 2009-09-30 | 2010-09-30 | 반도체 기판의 산화된 표면을 활성화하는 용액 및 그 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0956800A FR2950633B1 (fr) | 2009-09-30 | 2009-09-30 | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur. |
FR0959677A FR2950634B1 (fr) | 2009-09-30 | 2009-12-30 | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2950634A1 FR2950634A1 (fr) | 2011-04-01 |
FR2950634B1 true FR2950634B1 (fr) | 2012-02-03 |
Family
ID=41693088
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0956800A Expired - Fee Related FR2950633B1 (fr) | 2009-09-30 | 2009-09-30 | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur. |
FR0959677A Expired - Fee Related FR2950634B1 (fr) | 2009-09-30 | 2009-12-30 | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0956800A Expired - Fee Related FR2950633B1 (fr) | 2009-09-30 | 2009-09-30 | Solution et procede d'activation de la surface oxydee d'un substrat semi-conducteur. |
Country Status (10)
Country | Link |
---|---|
US (1) | US8883641B2 (fr) |
EP (1) | EP2483442B1 (fr) |
JP (1) | JP5764565B2 (fr) |
KR (1) | KR101717316B1 (fr) |
CN (1) | CN102575351B (fr) |
CA (1) | CA2774790C (fr) |
FR (2) | FR2950633B1 (fr) |
SG (1) | SG178896A1 (fr) |
TW (1) | TWI546411B (fr) |
WO (1) | WO2011039310A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2950062B1 (fr) * | 2009-09-11 | 2012-08-03 | Alchimer | Solution et procede d'activation de la surface d'un substrat semi-conducteur |
FR2974818B1 (fr) | 2011-05-05 | 2013-05-24 | Alchimer | Procede de depot de couches metalliques a base de nickel ou de cobalt sur un substrat solide semi-conducteur ; kit pour la mise en oeuvre de ce procede |
EP2528089B1 (fr) * | 2011-05-23 | 2014-03-05 | Alchimer | Procédé pour la formation d'une connexion électrique verticale dans une structure semi-conductrice stratifiée |
FR2982877B1 (fr) | 2011-11-18 | 2014-10-03 | Alchimer | Machine adaptee pour metalliser une cavite d'un substrat semi-conducteur ou conducteur telle qu'une structure du type via traversant |
TWI625424B (zh) * | 2013-03-13 | 2018-06-01 | 應用材料股份有限公司 | 蝕刻包含過渡金屬的膜之方法 |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US9786492B2 (en) * | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
FR3045674B1 (fr) * | 2015-12-17 | 2019-12-20 | Aveni | Procede de metallisation d'un substrat semi-conducteur avec du cuivre mettant en oeuvre un siliciure de cobalt ou de nickel |
US9704784B1 (en) | 2016-07-14 | 2017-07-11 | Nxp Usa, Inc. | Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer |
US11158500B2 (en) | 2017-05-05 | 2021-10-26 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films |
ES2646237B2 (es) * | 2017-09-28 | 2018-07-27 | Avanzare Innovacion Tecnologica S.L. | Formulación para el mordentado de materiales poliméricos previo al recubrimiento de los mismos |
FR3109840B1 (fr) | 2020-04-29 | 2022-05-13 | Aveni | Procédé de métallisation d’un substrat semi-conducteur, électrolyte et méthode de fabrication de 3D-NAND |
WO2023187473A1 (fr) * | 2022-03-30 | 2023-10-05 | Aveni | Procédé de métallisation avec un alliage de nickel ou de cobalt pour la fabrication de dispositifs à semi-conducteur |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58189365A (ja) * | 1982-04-28 | 1983-11-05 | Okuno Seiyaku Kogyo Kk | 化学メッキ用アンダーコート組成物 |
JPS59100262A (ja) * | 1982-12-01 | 1984-06-09 | Hitachi Ltd | パラジウム活性化液 |
US5380560A (en) * | 1992-07-28 | 1995-01-10 | International Business Machines Corporation | Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition |
US5264288A (en) * | 1992-10-01 | 1993-11-23 | Ppg Industries, Inc. | Electroless process using silylated polyamine-noble metal complexes |
JP2000096252A (ja) * | 1998-09-18 | 2000-04-04 | C Uyemura & Co Ltd | ハードディスク基板へのめっき方法 |
JP2002093747A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 導体構造の形成方法及び導体構造、並びに半導体装置の製造方法及び半導体装置 |
US6645832B2 (en) | 2002-02-20 | 2003-11-11 | Intel Corporation | Etch stop layer for silicon (Si) via etch in three-dimensional (3-D) wafer-to-wafer vertical stack |
US7060624B2 (en) | 2003-08-13 | 2006-06-13 | International Business Machines Corporation | Deep filled vias |
US7101792B2 (en) | 2003-10-09 | 2006-09-05 | Micron Technology, Inc. | Methods of plating via interconnects |
JP4401912B2 (ja) | 2003-10-17 | 2010-01-20 | 学校法人早稲田大学 | 半導体多層配線板の形成方法 |
CN1329554C (zh) * | 2004-01-13 | 2007-08-01 | 长沙力元新材料股份有限公司 | 非金属基材表面化学镀覆金属的方法及其采用的前处理体系 |
JP4911586B2 (ja) * | 2006-09-13 | 2012-04-04 | 学校法人早稲田大学 | 積層構造、超lsi配線板及びそれらの形成方法 |
US7547972B2 (en) | 2006-09-29 | 2009-06-16 | Waseda University | Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof |
US20090162681A1 (en) | 2007-12-21 | 2009-06-25 | Artur Kolics | Activation solution for electroless plating on dielectric layers |
-
2009
- 2009-09-30 FR FR0956800A patent/FR2950633B1/fr not_active Expired - Fee Related
- 2009-12-30 FR FR0959677A patent/FR2950634B1/fr not_active Expired - Fee Related
-
2010
- 2010-09-30 CN CN201080043038.7A patent/CN102575351B/zh active Active
- 2010-09-30 KR KR1020127005776A patent/KR101717316B1/ko active IP Right Grant
- 2010-09-30 WO PCT/EP2010/064565 patent/WO2011039310A1/fr active Application Filing
- 2010-09-30 JP JP2012531429A patent/JP5764565B2/ja active Active
- 2010-09-30 SG SG2012013660A patent/SG178896A1/en unknown
- 2010-09-30 TW TW099133428A patent/TWI546411B/zh active
- 2010-09-30 US US13/393,917 patent/US8883641B2/en active Active
- 2010-09-30 EP EP10759674.4A patent/EP2483442B1/fr active Active
- 2010-09-30 CA CA2774790A patent/CA2774790C/fr active Active
Also Published As
Publication number | Publication date |
---|---|
US8883641B2 (en) | 2014-11-11 |
KR101717316B1 (ko) | 2017-03-16 |
EP2483442B1 (fr) | 2014-11-12 |
FR2950633B1 (fr) | 2011-11-25 |
US20120196441A1 (en) | 2012-08-02 |
EP2483442A1 (fr) | 2012-08-08 |
CN102575351A (zh) | 2012-07-11 |
TW201122154A (en) | 2011-07-01 |
CA2774790A1 (fr) | 2011-04-07 |
JP2013506755A (ja) | 2013-02-28 |
JP5764565B2 (ja) | 2015-08-19 |
FR2950634A1 (fr) | 2011-04-01 |
SG178896A1 (en) | 2012-04-27 |
FR2950633A1 (fr) | 2011-04-01 |
WO2011039310A1 (fr) | 2011-04-07 |
CA2774790C (fr) | 2018-05-15 |
KR20120081080A (ko) | 2012-07-18 |
CN102575351B (zh) | 2014-03-12 |
TWI546411B (zh) | 2016-08-21 |
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