FR2944986B1 - Procede de polissage mecano-chimique d'un substrat - Google Patents
Procede de polissage mecano-chimique d'un substratInfo
- Publication number
- FR2944986B1 FR2944986B1 FR1053259A FR1053259A FR2944986B1 FR 2944986 B1 FR2944986 B1 FR 2944986B1 FR 1053259 A FR1053259 A FR 1053259A FR 1053259 A FR1053259 A FR 1053259A FR 2944986 B1 FR2944986 B1 FR 2944986B1
- Authority
- FR
- France
- Prior art keywords
- mecano
- substrate
- chemical polishing
- polishing
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/432,021 US8119529B2 (en) | 2009-04-29 | 2009-04-29 | Method for chemical mechanical polishing a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2944986A1 FR2944986A1 (fr) | 2010-11-05 |
FR2944986B1 true FR2944986B1 (fr) | 2015-08-21 |
Family
ID=42813883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1053259A Active FR2944986B1 (fr) | 2009-04-29 | 2010-04-28 | Procede de polissage mecano-chimique d'un substrat |
Country Status (7)
Country | Link |
---|---|
US (1) | US8119529B2 (fr) |
JP (2) | JP2010267960A (fr) |
KR (1) | KR101698008B1 (fr) |
CN (1) | CN101875182B (fr) |
DE (1) | DE102010018423B4 (fr) |
FR (1) | FR2944986B1 (fr) |
TW (1) | TWI506127B (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8491808B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
US8496843B2 (en) * | 2010-03-16 | 2013-07-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
US8232208B2 (en) | 2010-06-15 | 2012-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized chemical mechanical polishing composition and method of polishing a substrate |
US8568610B2 (en) | 2010-09-20 | 2013-10-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate |
US8865013B2 (en) * | 2011-08-15 | 2014-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing tungsten |
US8440094B1 (en) * | 2011-10-27 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate |
US8435420B1 (en) * | 2011-10-27 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing using tunable polishing formulation |
US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
US9484212B1 (en) * | 2015-10-30 | 2016-11-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
US9534148B1 (en) * | 2015-12-21 | 2017-01-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
US9803108B1 (en) | 2016-10-19 | 2017-10-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Aqueous compositions of stabilized aminosilane group containing silica particles |
US9783702B1 (en) * | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
JP2020203980A (ja) * | 2019-06-17 | 2020-12-24 | 日本キャボット・マイクロエレクトロニクス株式会社 | 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551168A (en) * | 1966-08-01 | 1970-12-29 | Armour Ind Chem Co | Protective polish |
KR20020086949A (ko) * | 2000-04-11 | 2002-11-20 | 캐보트 마이크로일렉트로닉스 코포레이션 | 실리콘 옥사이드의 선택적 제거를 위한 시스템 |
US6866793B2 (en) * | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
US20060189269A1 (en) * | 2005-02-18 | 2006-08-24 | Roy Pradip K | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7704125B2 (en) * | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
EP1566420A1 (fr) * | 2004-01-23 | 2005-08-24 | JSR Corporation | Dispersion aqueuse pour le polissage chimico-mécanique et procédé l'utilisant |
US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
US7731864B2 (en) * | 2005-06-29 | 2010-06-08 | Intel Corporation | Slurry for chemical mechanical polishing of aluminum |
US7842192B2 (en) * | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
US20080220610A1 (en) * | 2006-06-29 | 2008-09-11 | Cabot Microelectronics Corporation | Silicon oxide polishing method utilizing colloidal silica |
KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
JP5322455B2 (ja) * | 2007-02-26 | 2013-10-23 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP5285866B2 (ja) * | 2007-03-26 | 2013-09-11 | 富士フイルム株式会社 | 研磨液 |
JP2009081200A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 研磨液 |
-
2009
- 2009-04-29 US US12/432,021 patent/US8119529B2/en active Active
-
2010
- 2010-04-12 TW TW099111244A patent/TWI506127B/zh active
- 2010-04-23 KR KR1020100038080A patent/KR101698008B1/ko active IP Right Grant
- 2010-04-27 JP JP2010101763A patent/JP2010267960A/ja active Pending
- 2010-04-27 DE DE102010018423.3A patent/DE102010018423B4/de active Active
- 2010-04-28 FR FR1053259A patent/FR2944986B1/fr active Active
- 2010-04-28 CN CN2010101846936A patent/CN101875182B/zh active Active
-
2015
- 2015-05-13 JP JP2015098130A patent/JP6128161B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
DE102010018423A1 (de) | 2010-11-04 |
JP2010267960A (ja) | 2010-11-25 |
CN101875182A (zh) | 2010-11-03 |
TW201043685A (en) | 2010-12-16 |
TWI506127B (zh) | 2015-11-01 |
JP6128161B2 (ja) | 2017-05-17 |
US20100279507A1 (en) | 2010-11-04 |
FR2944986A1 (fr) | 2010-11-05 |
KR101698008B1 (ko) | 2017-01-19 |
CN101875182B (zh) | 2012-12-05 |
DE102010018423B4 (de) | 2021-06-17 |
JP2015188093A (ja) | 2015-10-29 |
US8119529B2 (en) | 2012-02-21 |
KR20100118945A (ko) | 2010-11-08 |
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