FI20085113A0 - Menetelmä grafiinirakenteiden valmistamiseksi alustoille - Google Patents

Menetelmä grafiinirakenteiden valmistamiseksi alustoille

Info

Publication number
FI20085113A0
FI20085113A0 FI20085113A FI20085113A FI20085113A0 FI 20085113 A0 FI20085113 A0 FI 20085113A0 FI 20085113 A FI20085113 A FI 20085113A FI 20085113 A FI20085113 A FI 20085113A FI 20085113 A0 FI20085113 A0 FI 20085113A0
Authority
FI
Finland
Prior art keywords
substrates
manufacturing graphene
graphene structures
structures
manufacturing
Prior art date
Application number
FI20085113A
Other languages
English (en)
Swedish (sv)
Inventor
Jani Kivioja
Tomi Haatainen
Jouni Ahopelto
Original Assignee
Valtion Teknillinen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valtion Teknillinen filed Critical Valtion Teknillinen
Priority to FI20085113A priority Critical patent/FI20085113A0/fi
Publication of FI20085113A0 publication Critical patent/FI20085113A0/fi
Priority to US12/367,353 priority patent/US20090200707A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/19—Preparation by exfoliation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Carbon And Carbon Compounds (AREA)
FI20085113A 2008-02-08 2008-02-08 Menetelmä grafiinirakenteiden valmistamiseksi alustoille FI20085113A0 (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI20085113A FI20085113A0 (fi) 2008-02-08 2008-02-08 Menetelmä grafiinirakenteiden valmistamiseksi alustoille
US12/367,353 US20090200707A1 (en) 2008-02-08 2009-02-06 Method of fabricating graphene structures on substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20085113A FI20085113A0 (fi) 2008-02-08 2008-02-08 Menetelmä grafiinirakenteiden valmistamiseksi alustoille

Publications (1)

Publication Number Publication Date
FI20085113A0 true FI20085113A0 (fi) 2008-02-08

Family

ID=39148983

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20085113A FI20085113A0 (fi) 2008-02-08 2008-02-08 Menetelmä grafiinirakenteiden valmistamiseksi alustoille

Country Status (2)

Country Link
US (1) US20090200707A1 (fi)
FI (1) FI20085113A0 (fi)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8431818B2 (en) * 2007-05-08 2013-04-30 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
US8057863B2 (en) * 2008-12-05 2011-11-15 The Regents Of The University Of California Electrostatic force assisted deposition of graphene
US8753468B2 (en) * 2009-08-27 2014-06-17 The United States Of America, As Represented By The Secretary Of The Navy Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
FR2962121B1 (fr) 2009-11-03 2012-07-13 Centre Nat Rech Scient Preparation de graphene par amincissement mecanique de materiaux graphitiques
US8673703B2 (en) 2009-11-17 2014-03-18 International Business Machines Corporation Fabrication of graphene nanoelectronic devices on SOI structures
US9306099B2 (en) * 2009-12-01 2016-04-05 Samsung Electronics Co., Ltd. Material including graphene and an inorganic material and method of manufacturing the material
US8354323B2 (en) 2010-02-02 2013-01-15 Searete Llc Doped graphene electronic materials
US8278643B2 (en) * 2010-02-02 2012-10-02 Searete Llc Doped graphene electronic materials
US8455981B2 (en) * 2010-02-02 2013-06-04 The Invention Science Fund I, Llc Doped graphene electronic materials
US8426842B2 (en) * 2010-02-02 2013-04-23 The Invention Science Fund I, Llc Doped graphene electronic materials
US8563965B2 (en) 2010-02-02 2013-10-22 The Invention Science Fund I, Llc Doped graphene electronic materials
US8450779B2 (en) 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
US20110233513A1 (en) * 2010-03-29 2011-09-29 International Business Machines Corporation Enhanced bonding interfaces on carbon-based materials for nanoelectronic devices
KR101211850B1 (ko) 2010-09-01 2012-12-12 연세대학교 산학협력단 그라핀 나노 필터 망, 그라핀 나노 필터 및 그 제조방법
JP6124797B2 (ja) * 2010-12-08 2017-05-10 スリーエム イノベイティブ プロパティズ カンパニー 物品並びにその製造及び使用方法
US20120273455A1 (en) * 2011-04-29 2012-11-01 Clean Energy Labs, Llc Methods for aligned transfer of thin membranes to substrates
SG186696A1 (en) * 2011-02-09 2013-02-28 Incubation Alliance Inc Method for producing multilayer graphene coated substrate
KR101218580B1 (ko) * 2011-05-13 2013-01-21 한국화학연구원 박리 기법을 이용한 그래핀 패턴 형성 방법 및 그 장치
US9388513B2 (en) 2011-07-01 2016-07-12 The University Of Kentucky Research Foundation Crystallographically-oriented carbon nanotubes grown on few-layer graphene films
US9390828B2 (en) 2011-07-01 2016-07-12 The University Of Kentucky Research Foundation Crystallographically-oriented carbon nanotubes grown on few-layer graphene films
CN102701789B (zh) * 2012-05-23 2013-10-16 西安电子科技大学 基于Cl2反应的SiC衬底上制备结构化石墨烯的方法
US9574063B2 (en) * 2013-09-17 2017-02-21 Lockheed Martin Corporation Method of making a large area graphene composite material
WO2015134904A1 (en) * 2014-03-06 2015-09-11 The Regents Of The University Of Michigan Field effect transistor memory device
US9318348B2 (en) * 2014-03-20 2016-04-19 King Abdulaziz University Fabrication of graphene electrodes on diamond substrate
WO2018141916A1 (de) * 2017-02-03 2018-08-09 August Dorn Vorrichtung und verfahren zur exfolation von materialschichten geschichteten materials sowie verfahren und vorrichtung zur erzeugung einer nanostruktur mittels gasphasenabscheidung hierzu
WO2018160732A1 (en) * 2017-02-28 2018-09-07 Massachusetts Institute Of Technology Systems and methods for electromechanical transfer printing of two dimensional materials

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070053168A1 (en) * 2004-01-21 2007-03-08 General Electric Company Advanced heat sinks and thermal spreaders
US20100071100A1 (en) * 2005-04-07 2010-03-18 Faris Sadeg M Probes, Methods of Making Probes, and Applications using Probes
US7449133B2 (en) * 2006-06-13 2008-11-11 Unidym, Inc. Graphene film as transparent and electrically conducting material

Also Published As

Publication number Publication date
US20090200707A1 (en) 2009-08-13

Similar Documents

Publication Publication Date Title
FI20085113A0 (fi) Menetelmä grafiinirakenteiden valmistamiseksi alustoille
DK2144296T3 (da) Fremgangsmåde til fremstilling af et halvlederlag
BR112012006813A2 (pt) substrato revestido
FI20060288A0 (fi) Pinnoitusmenetelmä
FI20116048A (fi) Menetelmä NFC-kalvojen valmistamiseksi alustoille
DK2212453T3 (da) Fremgangsmåde til at danne en bioaktiv belægning
DK2200348T3 (da) Tredimensionelt substrat til hørehjælpsanordninger
DE602007013995D1 (de) Beschichtungsverfahren
FI20095392A0 (fi) Menetelmä substraatin pinnan käsittelemiseksi
FI20061014A0 (fi) Diffuusiopinnoitusmenetelmä
DK2753418T3 (da) Fremgangsmåde til overtrækning af et substrat med et polymerlag
EP2270839A4 (en) METHOD FOR MANUFACTURING A BONDED SUBSTRATE
EP2352164A4 (en) SOI SUBSTRATE METHOD
FI20060071A (fi) Menetelmä monimateriaalikomponentin tai -rakenteen valmistamiseksi
DK2342296T3 (da) Fremgangsmåde til trykning på substrater
BRPI0910053A2 (pt) revestimento para substratos elastoméricos
DE112009002122A5 (de) Beschichtungsverfahren
FI20080405A0 (fi) Julkisivulevyn valmistusmenetelmä
BRPI0815257A2 (pt) Método para revestir um substrato
FI20085807A (fi) Menetelmä essitalopraamin valmistamiseksi
FR2914493B1 (fr) Substrat demontable.
FI20070746A0 (fi) Menetelmä kerrostumien muodostumisen kontrolloimiseksi
TWI373094B (en) Manufacturing method of substrate structure
FI20080128A0 (fi) Menetelmä lasin pinnan muokkaamiseksi
FR2933235B1 (fr) Substrat bon marche et procede de fabrication associe

Legal Events

Date Code Title Description
FD Application lapsed