FR2879022B1 - Composants electroniques superposes pour capteurs. - Google Patents
Composants electroniques superposes pour capteurs.Info
- Publication number
- FR2879022B1 FR2879022B1 FR0512029A FR0512029A FR2879022B1 FR 2879022 B1 FR2879022 B1 FR 2879022B1 FR 0512029 A FR0512029 A FR 0512029A FR 0512029 A FR0512029 A FR 0512029A FR 2879022 B1 FR2879022 B1 FR 2879022B1
- Authority
- FR
- France
- Prior art keywords
- sensors
- electronic components
- superposed
- superposed electronic
- components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/81141—Guiding structures both on and outside the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81909—Post-treatment of the bump connector or bonding area
- H01L2224/8191—Cleaning, e.g. oxide removal step, desmearing
- H01L2224/81913—Plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06551—Conductive connections on the side of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06593—Mounting aids permanently on device; arrangements for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/003,602 US7518251B2 (en) | 2004-12-03 | 2004-12-03 | Stacked electronics for sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2879022A1 FR2879022A1 (fr) | 2006-06-09 |
FR2879022B1 true FR2879022B1 (fr) | 2009-02-27 |
Family
ID=36481205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0512029A Active FR2879022B1 (fr) | 2004-12-03 | 2005-11-28 | Composants electroniques superposes pour capteurs. |
Country Status (3)
Country | Link |
---|---|
US (1) | US7518251B2 (fr) |
JP (1) | JP5002150B2 (fr) |
FR (1) | FR2879022B1 (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200629554A (en) * | 2004-10-14 | 2006-08-16 | Koninkl Philips Electronics Nv | A MOSFET for high voltage applications and a method of fabricating same |
EP2070114B1 (fr) * | 2006-09-25 | 2010-01-06 | Koninklijke Philips Electronics N.V. | Interconnexion de puce montée face avant par l'intermédiaire de vias de puce |
US7451651B2 (en) * | 2006-12-11 | 2008-11-18 | General Electric Company | Modular sensor assembly and methods of fabricating the same |
US7687976B2 (en) * | 2007-01-31 | 2010-03-30 | General Electric Company | Ultrasound imaging system |
JP5049340B2 (ja) * | 2007-03-20 | 2012-10-17 | 株式会社日立メディコ | 超音波探触子及び超音波診断装置 |
US20080242979A1 (en) * | 2007-03-30 | 2008-10-02 | Rayette Ann Fisher | Combined X-ray detector and ultrasound imager |
US7892176B2 (en) * | 2007-05-02 | 2011-02-22 | General Electric Company | Monitoring or imaging system with interconnect structure for large area sensor array |
US20080315331A1 (en) * | 2007-06-25 | 2008-12-25 | Robert Gideon Wodnicki | Ultrasound system with through via interconnect structure |
US20090182233A1 (en) * | 2008-01-10 | 2009-07-16 | Robert Gideon Wodnicki | Ultrasound System With Integrated Control Switches |
US20090182229A1 (en) * | 2008-01-10 | 2009-07-16 | Robert Gideon Wodnicki | UltraSound System With Highly Integrated ASIC Architecture |
DE102008038946A1 (de) * | 2008-03-10 | 2009-09-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer halbleiterbasierten Schaltung und halbleiterbasierte Schaltung mit dreidimensionaler Schaltungstopologie |
US9136259B2 (en) * | 2008-04-11 | 2015-09-15 | Micron Technology, Inc. | Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking |
JP2009291514A (ja) * | 2008-06-09 | 2009-12-17 | Canon Inc | 静電容量型トランスデューサの製造方法、及び静電容量型トランスデューサ |
US8345508B2 (en) * | 2009-09-20 | 2013-01-01 | General Electric Company | Large area modular sensor array assembly and method for making the same |
US8822275B2 (en) * | 2012-04-30 | 2014-09-02 | Hewlett-Packard Development Company, L.P. | Composite wafer including a molded wafer and a second wafer |
WO2014123922A1 (fr) | 2013-02-05 | 2014-08-14 | Butterfly Network, Inc. | Transducteurs d'ultrasons métal-oxyde-semi-conducteurs complémentaires et appareil et procédés associés |
US9242275B2 (en) | 2013-03-15 | 2016-01-26 | Butterfly Networks, Inc. | Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same |
CA2946133A1 (fr) | 2014-04-18 | 2015-10-22 | Butterfly Network, Inc. | Transducteurs ultrasoniques dans des tranches de semi-conducteur a oxyde de metal complementaire (cmos) ainsi qu'appareil et procedes associes |
US9067779B1 (en) | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
US20170025388A1 (en) * | 2015-07-22 | 2017-01-26 | Microchip Technology Incorporated | Backside Stacked Die In An Integrated Circuit (IC) Package |
US9987661B2 (en) | 2015-12-02 | 2018-06-05 | Butterfly Network, Inc. | Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods |
JP6745196B2 (ja) * | 2016-11-04 | 2020-08-26 | 浜松ホトニクス株式会社 | 超音波検査装置 |
US10196261B2 (en) | 2017-03-08 | 2019-02-05 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
WO2018175564A1 (fr) * | 2017-03-21 | 2018-09-27 | The Charles Stark Draper Laboratory, Inc. | Réseau de plan focal numérique neuromorphique |
US10512936B2 (en) | 2017-06-21 | 2019-12-24 | Butterfly Network, Inc. | Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections |
US11328969B2 (en) * | 2017-11-16 | 2022-05-10 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor device and manufacturing method thereof |
DE102018125901A1 (de) * | 2018-10-18 | 2020-04-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines elektronischen Bauelements, Halbleiterchip, elektronisches Bauelement und Verfahren zur Herstellung eines Halbleiterchips |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5780997A (en) * | 1996-10-03 | 1998-07-14 | Sundstrand Corporation | Variable reluctance alternating current generator |
US5910641A (en) * | 1997-01-10 | 1999-06-08 | International Business Machines Corporation | Selectively filled adhesives for compliant, reworkable, and solder-free flip chip interconnection and encapsulation |
JP3543251B2 (ja) * | 1997-02-03 | 2004-07-14 | ローム株式会社 | Icチップのボンディング装置 |
KR100522223B1 (ko) * | 1997-01-24 | 2005-12-21 | 로무 가부시키가이샤 | 반도체장치및그제조방법 |
JPH1117050A (ja) * | 1997-06-20 | 1999-01-22 | Matsushita Electric Ind Co Ltd | 回路基板及び回路基板の製造方法 |
JP3594771B2 (ja) * | 1997-07-25 | 2004-12-02 | 三菱電機株式会社 | 半導体装置の実装構造 |
US6114221A (en) * | 1998-03-16 | 2000-09-05 | International Business Machines Corporation | Method and apparatus for interconnecting multiple circuit chips |
US6780672B2 (en) * | 2000-01-31 | 2004-08-24 | Lockheed Martin Corporation | Micro eletro-mechanical component and system architecture |
EP1122567A1 (fr) * | 2000-02-02 | 2001-08-08 | Corning Incorporated | Alignement passif utilisant un socle à surface inclinée |
US6506671B1 (en) * | 2000-06-08 | 2003-01-14 | Micron Technology, Inc. | Ring positionable about a periphery of a contact pad, semiconductor device components including same, and methods for positioning the ring around a contact pad |
US6667225B2 (en) * | 2001-12-17 | 2003-12-23 | Intel Corporation | Wafer-bonding using solder and method of making the same |
DE10200399B4 (de) * | 2002-01-08 | 2008-03-27 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Erzeugung einer dreidimensional integrierten Halbleitervorrichtung und dreidimensional integrierte Halbleitervorrichtung |
JP4009846B2 (ja) * | 2003-01-15 | 2007-11-21 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
US6815254B2 (en) * | 2003-03-10 | 2004-11-09 | Freescale Semiconductor, Inc. | Semiconductor package with multiple sides having package contacts |
-
2004
- 2004-12-03 US US11/003,602 patent/US7518251B2/en not_active Expired - Fee Related
-
2005
- 2005-11-28 FR FR0512029A patent/FR2879022B1/fr active Active
- 2005-11-30 JP JP2005344807A patent/JP5002150B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2006165546A (ja) | 2006-06-22 |
US7518251B2 (en) | 2009-04-14 |
US20060118939A1 (en) | 2006-06-08 |
FR2879022A1 (fr) | 2006-06-09 |
JP5002150B2 (ja) | 2012-08-15 |
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