FR2838238B1 - Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant - Google Patents
Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolantInfo
- Publication number
- FR2838238B1 FR2838238B1 FR0204358A FR0204358A FR2838238B1 FR 2838238 B1 FR2838238 B1 FR 2838238B1 FR 0204358 A FR0204358 A FR 0204358A FR 0204358 A FR0204358 A FR 0204358A FR 2838238 B1 FR2838238 B1 FR 2838238B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- insulating medium
- enveloping
- encapsulated
- grid encapsulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0204358A FR2838238B1 (fr) | 2002-04-08 | 2002-04-08 | Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant |
US10/409,653 US6969878B2 (en) | 2002-04-08 | 2003-04-08 | Surround-gate semiconductor device encapsulated in an insulating medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0204358A FR2838238B1 (fr) | 2002-04-08 | 2002-04-08 | Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2838238A1 FR2838238A1 (fr) | 2003-10-10 |
FR2838238B1 true FR2838238B1 (fr) | 2005-04-15 |
Family
ID=28052202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0204358A Expired - Fee Related FR2838238B1 (fr) | 2002-04-08 | 2002-04-08 | Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant |
Country Status (2)
Country | Link |
---|---|
US (1) | US6969878B2 (fr) |
FR (1) | FR2838238B1 (fr) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100451459B1 (ko) * | 2003-02-10 | 2004-10-07 | 삼성전자주식회사 | 더블 게이트 전극 형성 방법 및 더블 게이트 전극을포함하는 반도체 장치의 제조 방법 |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US7268058B2 (en) * | 2004-01-16 | 2007-09-11 | Intel Corporation | Tri-gate transistors and methods to fabricate same |
US7154118B2 (en) * | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
DE102005026228B4 (de) * | 2004-06-08 | 2010-04-15 | Samsung Electronics Co., Ltd., Suwon | Transistor vom GAA-Typ und Verfahren zu dessen Herstellung |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7332439B2 (en) * | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US7361958B2 (en) * | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20060202266A1 (en) * | 2005-03-14 | 2006-09-14 | Marko Radosavljevic | Field effect transistor with metal source/drain regions |
FR2884052B1 (fr) * | 2005-03-30 | 2007-06-22 | St Microelectronics Crolles 2 | Transistor imos |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) * | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
FR2889622A1 (fr) * | 2005-08-08 | 2007-02-09 | St Microelectronics Crolles 2 | Procede de fabrication d'un transistor a nanodoigts semiconducteurs paralleles |
US7402875B2 (en) | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
US20070090416A1 (en) * | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7479421B2 (en) | 2005-09-28 | 2009-01-20 | Intel Corporation | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
US20070090408A1 (en) * | 2005-09-29 | 2007-04-26 | Amlan Majumdar | Narrow-body multiple-gate FET with dominant body transistor for high performance |
FR2893762B1 (fr) * | 2005-11-18 | 2007-12-21 | Commissariat Energie Atomique | Procede de realisation de transistor a double grilles auto-alignees par reduction de motifs de grille |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US20070152266A1 (en) * | 2005-12-29 | 2007-07-05 | Intel Corporation | Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers |
FR2897201B1 (fr) * | 2006-02-03 | 2008-04-25 | Stmicroelectronics Crolles Sas | Dispositif de transistor a doubles grilles planaires et procede de fabrication. |
US7803668B2 (en) | 2006-02-24 | 2010-09-28 | Stmicroelectronics (Crolles 2) Sas | Transistor and fabrication process |
FR2897981B1 (fr) * | 2006-02-24 | 2008-05-30 | St Microelectronics Crolles 2 | Procede de fabrication de transistor et transistor |
US7456042B2 (en) * | 2006-06-04 | 2008-11-25 | Robert Bosch Gmbh | Microelectromechanical systems having stored charge and methods for fabricating and using same |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US20080157225A1 (en) * | 2006-12-29 | 2008-07-03 | Suman Datta | SRAM and logic transistors with variable height multi-gate transistor architecture |
ES2489615T3 (es) * | 2007-12-11 | 2014-09-02 | Apoteknos Para La Piel, S.L. | Uso de un compuesto derivado del acido p-hidroxifenil propionico para el tratamiento de la psoriasis |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
FR2937463B1 (fr) * | 2008-10-17 | 2010-12-24 | Commissariat Energie Atomique | Procede de fabrication de composants empiles et auto-alignes sur un substrat |
US8860006B2 (en) * | 2010-03-26 | 2014-10-14 | The Regents Of The University Of California | Spin transistor having multiferroic gate dielectric |
US8815691B2 (en) | 2012-12-21 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a gate all around device |
US9954107B2 (en) * | 2015-05-05 | 2018-04-24 | International Business Machines Corporation | Strained FinFET source drain isolation |
US10522687B2 (en) * | 2017-02-16 | 2019-12-31 | Qualcomm Incorporated | Wrap-around gate structures and methods of forming wrap-around gate structures |
US20220335982A1 (en) * | 2021-04-19 | 2022-10-20 | Micron Technology, Inc. | Shared vertical digit line for semiconductor devices |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960002088B1 (ko) * | 1993-02-17 | 1996-02-10 | 삼성전자주식회사 | 에스오아이(SOI : silicon on insulator) 구조의 반도체 장치 제조방법 |
US5348899A (en) * | 1993-05-12 | 1994-09-20 | Micron Semiconductor, Inc. | Method of fabricating a bottom and top gated thin film transistor |
JP3460863B2 (ja) * | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5497019A (en) * | 1994-09-22 | 1996-03-05 | The Aerospace Corporation | Silicon-on-insulator gate-all-around MOSFET devices and fabrication methods |
US5705405A (en) * | 1994-09-30 | 1998-01-06 | Sgs-Thomson Microelectronics, Inc. | Method of making the film transistor with all-around gate electrode |
FR2791178B1 (fr) * | 1999-03-19 | 2001-11-16 | France Telecom | NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION |
FR2795555B1 (fr) * | 1999-06-28 | 2002-12-13 | France Telecom | Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique |
FR2799305B1 (fr) * | 1999-10-05 | 2004-06-18 | St Microelectronics Sa | Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu |
-
2002
- 2002-04-08 FR FR0204358A patent/FR2838238B1/fr not_active Expired - Fee Related
-
2003
- 2003-04-08 US US10/409,653 patent/US6969878B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040016968A1 (en) | 2004-01-29 |
FR2838238A1 (fr) | 2003-10-10 |
US6969878B2 (en) | 2005-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2838238B1 (fr) | Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant | |
DE60235846D1 (de) | Speicherschaltung mit Paritätszellenmatrix | |
EP1616350A4 (fr) | Module multi-boitier semi-conducteur comprenant un processeur et des ensembles de boitiers de memoire | |
FR2842352B1 (fr) | Dispositif a semiconducteur de puissance | |
EP1657806A4 (fr) | Convertisseur de puissance et structure de montage de dispositif a semi-conducteur | |
EP1564803A4 (fr) | Embase et dispositif a semi-conducteur | |
DE60331799D1 (de) | Halbleitervorrichtung | |
DE60045789D1 (de) | Anzeigevorrichtung mit im Anzeigesubstrat integriertem Speicher | |
DE60127027D1 (de) | Halbleiterelement mit Leistungsverdrahtungsstruktur | |
DE69942762D1 (de) | Halbleitervorrichtung mit als Grid-Array verteilten Verbindungsanschlüssen | |
DE60325596D1 (de) | Speicher-krafteinspritzvorrichtung | |
DE60130297D1 (de) | Halbleiterbauelement mit einem ESD-Schutz | |
EP1605524A4 (fr) | Element de montage pour un element electroluminescent, et dispositif a semi-conducteur utilisant celui-ci | |
NO20042700L (no) | Kraftforsyningssystem og elektronisk innretning som omfatter systemet | |
DE60223265D1 (de) | Geschirrspülmaschine mit Flachfiltereinrichtung umfassend Bereiche mit unterschiedlichen Lochdimensionen | |
GB2395233B (en) | Heat dissipation device and its impeller thereof | |
SG132500A1 (en) | Integrated circuit leadframe with ground plane | |
EP1385213A4 (fr) | Memoire a semi-conducteurs et son procede de fabrication | |
AU2003220371A8 (en) | Encapsulated organic semiconductor device and method | |
DE60321866D1 (de) | Halbleiter integrierte Schaltungsvorrichtung | |
FR2838579B1 (fr) | Dispositif a semiconducteur de puissance | |
DE69930715D1 (de) | Elektronische Halbleiterleistungsanordnung mit integrierter Diode | |
DE60000159D1 (de) | Halbleiter-Vorrichtung mit niedrigerem Leistungsverbrauch | |
DE60030963D1 (de) | Elektronischer Halbleiterbaustein mit Wärmeverteiler | |
DE50307101D1 (de) | Leistungshalbleitermodul |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20091231 |