DE60130297D1 - Halbleiterbauelement mit einem ESD-Schutz - Google Patents

Halbleiterbauelement mit einem ESD-Schutz

Info

Publication number
DE60130297D1
DE60130297D1 DE60130297T DE60130297T DE60130297D1 DE 60130297 D1 DE60130297 D1 DE 60130297D1 DE 60130297 T DE60130297 T DE 60130297T DE 60130297 T DE60130297 T DE 60130297T DE 60130297 D1 DE60130297 D1 DE 60130297D1
Authority
DE
Germany
Prior art keywords
semiconductor device
esd protection
esd
protection
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60130297T
Other languages
English (en)
Other versions
DE60130297T2 (de
Inventor
Kazutoshi Nakamura
Yusuke Kawaguchi
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60130297D1 publication Critical patent/DE60130297D1/de
Application granted granted Critical
Publication of DE60130297T2 publication Critical patent/DE60130297T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60130297T 2000-09-11 2001-09-11 Halbleiterbauelement mit einem ESD-Schutz Expired - Lifetime DE60130297T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000274434A JP2002094063A (ja) 2000-09-11 2000-09-11 半導体装置
JP2000274434 2000-09-11

Publications (2)

Publication Number Publication Date
DE60130297D1 true DE60130297D1 (de) 2007-10-18
DE60130297T2 DE60130297T2 (de) 2008-05-29

Family

ID=18760194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130297T Expired - Lifetime DE60130297T2 (de) 2000-09-11 2001-09-11 Halbleiterbauelement mit einem ESD-Schutz

Country Status (6)

Country Link
US (1) US6605844B2 (de)
EP (1) EP1187214B1 (de)
JP (1) JP2002094063A (de)
CN (1) CN1199286C (de)
DE (1) DE60130297T2 (de)
TW (1) TW556346B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3783156B2 (ja) * 2001-10-17 2006-06-07 株式会社日立製作所 半導体装置
JP4228586B2 (ja) 2002-05-21 2009-02-25 富士電機デバイステクノロジー株式会社 半導体装置
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US7195965B2 (en) * 2002-10-25 2007-03-27 Texas Instruments Incorporated Premature breakdown in submicron device geometries
US7038274B2 (en) 2003-11-13 2006-05-02 Volterra Semiconductor Corporation Switching regulator with high-side p-type device
US7163856B2 (en) 2003-11-13 2007-01-16 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor
US7074659B2 (en) * 2003-11-13 2006-07-11 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor
US7220633B2 (en) 2003-11-13 2007-05-22 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET
JP2006054247A (ja) * 2004-08-10 2006-02-23 Fuji Electric Device Technology Co Ltd 半導体装置
US7405443B1 (en) 2005-01-07 2008-07-29 Volterra Semiconductor Corporation Dual gate lateral double-diffused MOSFET (LDMOS) transistor
JP4703196B2 (ja) * 2005-01-18 2011-06-15 株式会社東芝 半導体装置
US7414287B2 (en) * 2005-02-21 2008-08-19 Texas Instruments Incorporated System and method for making a LDMOS device with electrostatic discharge protection
JP4867251B2 (ja) * 2005-09-26 2012-02-01 トヨタ自動車株式会社 半導体装置
US7560777B1 (en) * 2005-11-08 2009-07-14 Advanced Micro Devices, Inc. Protection element and method of manufacture
TW200741892A (en) * 2006-03-02 2007-11-01 Volterra Semiconductor Corp A lateral double-diffused MOSFET (LDMOS) transistor and a method of fabricating
JP2006287250A (ja) * 2006-05-29 2006-10-19 Rohm Co Ltd 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置
US7999318B2 (en) 2007-12-28 2011-08-16 Volterra Semiconductor Corporation Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the same
US7910995B2 (en) * 2008-04-24 2011-03-22 Fairchild Semiconductor Corporation Structure and method for semiconductor power devices
KR101009399B1 (ko) * 2008-10-01 2011-01-19 주식회사 동부하이텍 Ｌｄｍｏｓ 트랜지스터 및 그 제조방법
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
JP2010118548A (ja) 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
US20110115018A1 (en) * 2009-11-13 2011-05-19 Maxim Integrated Products, Inc. Mos power transistor
DE102009053065A1 (de) * 2009-11-13 2011-05-19 Austriamicrosystems Ag Hochvolttransistor, ESD-Schutzschaltung und Verwendung eines Hochvolttransistors in einer ESD-Schutzschaltung
US8319258B2 (en) * 2010-02-11 2012-11-27 United Microelectronics Corp. Electro-static discharge (ESD) clamping device
US8319255B2 (en) * 2010-04-01 2012-11-27 Texas Instruments Incorporated Low side Zener reference voltage extended drain SCR clamps
JP5455801B2 (ja) * 2010-06-10 2014-03-26 株式会社東芝 半導体装置
US8304830B2 (en) * 2010-06-10 2012-11-06 Macronix International Co., Ltd. LDPMOS structure for enhancing breakdown voltage and specific on resistance in biCMOS-DMOS process
CN102610641B (zh) * 2011-01-20 2014-05-21 上海华虹宏力半导体制造有限公司 高压ldmos器件及其制造方法
JP5703790B2 (ja) 2011-01-31 2015-04-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US9058995B2 (en) 2012-04-05 2015-06-16 International Business Machines Corporation Self-protected drain-extended metal-oxide-semiconductor transistor
JP6011136B2 (ja) 2012-08-09 2016-10-19 富士電機株式会社 半導体装置
US8648417B1 (en) * 2012-10-01 2014-02-11 O2Micor, Inc. LDMOS transistors with improved ESD capability
JP2014138091A (ja) 2013-01-17 2014-07-28 Fuji Electric Co Ltd 半導体装置およびその製造方法
CN112768517B (zh) * 2019-11-04 2022-06-21 东南大学 绝缘栅双极型晶体管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111803B1 (de) * 1982-12-13 1989-03-01 General Electric Company Laterale Gleichrichter mit isoliertem Gate
US4672407A (en) 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
EP0371785B1 (de) 1988-11-29 1996-05-01 Kabushiki Kaisha Toshiba Lateraler Leitfähigkeitsmodulations-MOSFET
US5157573A (en) * 1989-05-12 1992-10-20 Western Digital Corporation ESD protection circuit with segmented buffer transistor
JPH05283622A (ja) * 1992-03-30 1993-10-29 Nec Corp 半導体装置
US5517046A (en) * 1993-11-19 1996-05-14 Micrel, Incorporated High voltage lateral DMOS device with enhanced drift region
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
US6064086A (en) 1995-08-24 2000-05-16 Kabushiki Kaisha Toshiba Semiconductor device having lateral IGBT
US6133607A (en) 1997-05-22 2000-10-17 Kabushiki Kaisha Toshiba Semiconductor device
US6144070A (en) * 1997-08-29 2000-11-07 Texas Instruments Incorporated High breakdown-voltage transistor with electrostatic discharge protection
US6137140A (en) 1997-11-26 2000-10-24 Texas Instruments Incorporated Integrated SCR-LDMOS power device

Also Published As

Publication number Publication date
US6605844B2 (en) 2003-08-12
CN1344032A (zh) 2002-04-10
CN1199286C (zh) 2005-04-27
JP2002094063A (ja) 2002-03-29
TW556346B (en) 2003-10-01
EP1187214A2 (de) 2002-03-13
DE60130297T2 (de) 2008-05-29
EP1187214A3 (de) 2006-07-26
EP1187214B1 (de) 2007-09-05
US20020030238A1 (en) 2002-03-14

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