FR2791178B1 - NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION - Google Patents

NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION

Info

Publication number
FR2791178B1
FR2791178B1 FR9903470A FR9903470A FR2791178B1 FR 2791178 B1 FR2791178 B1 FR 2791178B1 FR 9903470 A FR9903470 A FR 9903470A FR 9903470 A FR9903470 A FR 9903470A FR 2791178 B1 FR2791178 B1 FR 2791178B1
Authority
FR
France
Prior art keywords
massive
architectures
self
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9903470A
Other languages
English (en)
Other versions
FR2791178A1 (fr
Inventor
Malgorzata Jurczak
Thomas Skotnicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9903470A priority Critical patent/FR2791178B1/fr
Priority to PCT/FR2000/000641 priority patent/WO2000057480A1/fr
Priority to EP00910964A priority patent/EP1166362A1/fr
Publication of FR2791178A1 publication Critical patent/FR2791178A1/fr
Application granted granted Critical
Publication of FR2791178B1 publication Critical patent/FR2791178B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
FR9903470A 1999-03-19 1999-03-19 NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION Expired - Fee Related FR2791178B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9903470A FR2791178B1 (fr) 1999-03-19 1999-03-19 NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION
PCT/FR2000/000641 WO2000057480A1 (fr) 1999-03-19 2000-03-16 Nouveau dispositif semi-conducteur combinant les avantages des architectures massive et soi, et procede de fabrication
EP00910964A EP1166362A1 (fr) 1999-03-19 2000-03-16 Nouveau dispositif semi-conducteur combinant les avantages des architectures massive et soi, et procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9903470A FR2791178B1 (fr) 1999-03-19 1999-03-19 NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION

Publications (2)

Publication Number Publication Date
FR2791178A1 FR2791178A1 (fr) 2000-09-22
FR2791178B1 true FR2791178B1 (fr) 2001-11-16

Family

ID=9543429

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9903470A Expired - Fee Related FR2791178B1 (fr) 1999-03-19 1999-03-19 NOUVEAU DISPOSITIF SEMI-CONDUCTEUR COMBINANT LES AVANTAGES DES ARCHITECTURES MASSIVE ET soi, ET PROCEDE DE FABRICATION

Country Status (3)

Country Link
EP (1) EP1166362A1 (fr)
FR (1) FR2791178B1 (fr)
WO (1) WO2000057480A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3634320B2 (ja) 2002-03-29 2005-03-30 株式会社東芝 半導体装置及び半導体装置の製造方法
FR2838238B1 (fr) 2002-04-08 2005-04-15 St Microelectronics Sa Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant
US7078298B2 (en) * 2003-05-20 2006-07-18 Sharp Laboratories Of America, Inc. Silicon-on-nothing fabrication process
FR2856521A1 (fr) * 2003-06-23 2004-12-24 St Microelectronics Sa Transistor mos, procede de fabrication correspondant et utilisation d'un tel transistor pour la realisation d'un plan memoire
US7015147B2 (en) * 2003-07-22 2006-03-21 Sharp Laboratories Of America, Inc. Fabrication of silicon-on-nothing (SON) MOSFET fabrication using selective etching of Si1-xGex layer
GB2412009B (en) * 2004-03-11 2006-01-25 Toshiba Research Europ Limited A semiconductor device and method of its manufacture
JP2007027232A (ja) 2005-07-13 2007-02-01 Seiko Epson Corp 半導体装置及びその製造方法
CN102376769B (zh) * 2010-08-18 2013-06-26 中国科学院微电子研究所 超薄体晶体管及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
JPH0666465B2 (ja) * 1987-04-24 1994-08-24 日本電気株式会社 電界効果トランジスタ
US5166765A (en) * 1991-08-26 1992-11-24 At&T Bell Laboratories Insulated gate field-effect transistor with pulse-shaped doping
JPH05299647A (ja) * 1992-04-24 1993-11-12 Sanyo Electric Co Ltd Ｍｏｓ電界効果トランジスタとその製造方法
US5604368A (en) * 1994-07-15 1997-02-18 International Business Machines Corporation Self-aligned double-gate MOSFET by selective lateral epitaxy
US5494837A (en) * 1994-09-27 1996-02-27 Purdue Research Foundation Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
KR0143713B1 (ko) * 1994-12-26 1998-07-01 김주용 트랜지스터 및 그 제조 방법
JPH11500873A (ja) * 1995-12-15 1999-01-19 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ ＳｉＧｅ層を具えた半導体電界効果デバイス

Also Published As

Publication number Publication date
WO2000057480A1 (fr) 2000-09-28
EP1166362A1 (fr) 2002-01-02
FR2791178A1 (fr) 2000-09-22

Similar Documents

Publication Publication Date Title
DE60039535D1 (de) Lichtemittierdende bzw. lichtempfindliche halbleiteranordnung und ihre herstellungsmethode
SG96201A1 (en) Flip-chip type semiconductor device and method of manufacturing the same
FR2792458B1 (fr) Dispositif a semi-conducteur et son procede de fabrication
ITMI20010731A0 (it) Dispositivo semiconduttore e metodo per la produzione dello stesso
EP1189266A4 (fr) Procede d'obtention de tranches de silicium ou de soi et tranches ainsi obtenues
DE60045088D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE60038323D1 (de) Halbleiterkristall, dessen Herstellungsverfahren und Halbleiterbauelement
GB2353404B (en) Semiconductor device and method for manufacturing the same
SG113399A1 (en) Laser annealing method and semiconductor device fabricating method
EP1310583A4 (fr) Plaquette en silicium monocristallin et procede de fabrication
MA25759A1 (fr) Procede et dispositif de fabrication d'articles de brosserie ainsi que de brosses.
SG100769A1 (en) Semiconductor device and method of manufacturing the same
EP1158581A4 (fr) Procede de fabrication d'une tranche de soi, et tranche de soi
FR2808122B1 (fr) Dispositif a semiconducteurs et procede pour sa fabrication
EP1261016A4 (fr) Dispositif a faisceau d'electrons et procede de production de dispositifs a semi-conducteur utilisant ledit dispositif a faisceau d'electrons
SG132505A1 (en) Semiconductor device, and manufacturing method thereof
GB9913900D0 (en) A doped semiconductor material,a method of manufacturing the doped semiconductor material,and a semiconductor device
MA26301A1 (fr) Procede et dispositif pour la fabrication de poils
EP1335425A4 (fr) Dispositif a semi-conducteurs et procede de production dudit dispositif
FR2799307B1 (fr) Dispositif semi-conducteur combinant les avantages des architectures massives et soi, procede de fabrication
DE60130422D1 (de) Halbleiter mit SOI-Struktur und seine Herstellungsmethode
DE69942040D1 (de) Sensorvorrichtung und dessen herstellungsverfahren.
GB2373635B (en) Semiconductor device and method of manufacturing the same
EP1261040A4 (fr) Dispositif a semiconducteur et son procede de fabrication
DE60141670D1 (de) Halbleiterspeicherbauelement, dessen Herstellungsverfahren und dessen Betriebsweise

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20071130