FR2788386B1 - Procede de fabrication d'un micro-actionneur en utilisant une photolithographie - Google Patents

Procede de fabrication d'un micro-actionneur en utilisant une photolithographie

Info

Publication number
FR2788386B1
FR2788386B1 FR9908082A FR9908082A FR2788386B1 FR 2788386 B1 FR2788386 B1 FR 2788386B1 FR 9908082 A FR9908082 A FR 9908082A FR 9908082 A FR9908082 A FR 9908082A FR 2788386 B1 FR2788386 B1 FR 2788386B1
Authority
FR
France
Prior art keywords
photolithography
actuator
micro
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9908082A
Other languages
English (en)
Other versions
FR2788386A1 (fr
Inventor
Sang Kyeong Yun
Sang June Park
Yeon Kyoung Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of FR2788386A1 publication Critical patent/FR2788386A1/fr
Application granted granted Critical
Publication of FR2788386B1 publication Critical patent/FR2788386B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/081—Shaping or machining of piezoelectric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Oxide Ceramics (AREA)
FR9908082A 1998-12-30 1999-06-24 Procede de fabrication d'un micro-actionneur en utilisant une photolithographie Expired - Fee Related FR2788386B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980060643 1998-12-30

Publications (2)

Publication Number Publication Date
FR2788386A1 FR2788386A1 (fr) 2000-07-13
FR2788386B1 true FR2788386B1 (fr) 2005-08-05

Family

ID=19567408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9908082A Expired - Fee Related FR2788386B1 (fr) 1998-12-30 1999-06-24 Procede de fabrication d'un micro-actionneur en utilisant une photolithographie

Country Status (5)

Country Link
US (1) US6265139B1 (fr)
JP (1) JP3393093B2 (fr)
DE (1) DE19928807B4 (fr)
FR (1) FR2788386B1 (fr)
GB (1) GB2345380B (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3208386B2 (ja) * 1999-09-29 2001-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 圧電センサの取り付け方法、アクチュエータアーム、ディスク装置及び接続検査方法
KR100398363B1 (ko) * 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
JP3957528B2 (ja) * 2002-03-05 2007-08-15 日本碍子株式会社 圧電／電歪膜型素子
DE10302518B4 (de) * 2003-01-23 2005-07-21 Robert Bosch Gmbh Verfahren zur bereichsweisen Erzeugung einer Mikrostruktur auf einem Grundkörper
KR100519764B1 (ko) * 2003-03-20 2005-10-07 삼성전자주식회사 잉크젯 프린트헤드의 압전 액츄에이터 및 그 형성 방법
KR100612852B1 (ko) * 2003-07-18 2006-08-14 삼성전자주식회사 ＧｏＦ/ＧｏＰ의 질감 표현 방법과, 이를 이용한ＧｏＦ/ＧｏＰ 검색 방법 및 장치
JP4977946B2 (ja) * 2004-06-29 2012-07-18 富士ゼロックス株式会社 インクジェット記録ヘッドの製造方法
US7401403B2 (en) * 2004-12-20 2008-07-22 Palo Alto Research Center Incorporated Method for forming ceramic thick film element arrays with fine feature size, high-precision definition, and/or high aspect ratios
JP5023515B2 (ja) * 2006-03-06 2012-09-12 Ｔｄｋ株式会社 圧電素子の製造方法。
JP2008205048A (ja) * 2007-02-16 2008-09-04 Seiko Epson Corp 圧電素子の製造方法及び液体噴射ヘッドの製造方法
US8085508B2 (en) * 2008-03-28 2011-12-27 Hitachi Global Storage Technologies Netherlands B.V. System, method and apparatus for flexure-integrated microactuator
CN101714607B (zh) * 2009-09-22 2011-06-22 华南理工大学 金属铝电极压电陶瓷元件及其制备方法
JP2011088422A (ja) * 2009-10-21 2011-05-06 Samsung Electro-Mechanics Co Ltd インクジェットヘッドの製造方法
WO2013049188A1 (fr) * 2011-09-26 2013-04-04 Northeastern University Capteurs intégrés personnalisables
KR101280349B1 (ko) 2012-02-29 2013-07-01 국방과학연구소 Ｍｅｍｓ 공진기 및 그 제조방법
EP2765456B1 (fr) * 2013-02-08 2016-05-04 ams AG Procédé de masquage pour dispositifs semi-conducteurs avec topographie de surface élevée
RU2677723C1 (ru) * 2018-04-27 2019-01-21 Федеральное государственное бюджетное образовательное учреждение высшего образования "Пензенский государственный университет" Способ получения пьезокерамического материала
CN109336630B (zh) * 2018-08-29 2021-06-11 宁波华源精特金属制品有限公司 一种支架及其制备方法
CN113851577B (zh) * 2021-09-23 2024-02-20 业成光电（深圳）有限公司 压电传感器的制作方法
DE102021128880B3 (de) 2021-11-05 2022-09-08 Infineon Technologies Ag Integriertes energy-harvesting-system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69132442T2 (de) * 1990-01-25 2001-05-03 Dainippon Printing Co Ltd Verfahren und material zum bilden von texturierten dicken filmartigen mustern
US5089739A (en) * 1990-03-19 1992-02-18 Brother Kogyo Kabushiki Kaisha Laminate type piezoelectric actuator element
DE69310022T2 (de) * 1992-06-05 1997-08-21 Seiko Epson Corp Tintenstrahlaufzeichnungskopf
JP3140223B2 (ja) * 1992-11-11 2001-03-05 キヤノン株式会社 マイクロアクチュエータおよびその作製方法
JP3047661B2 (ja) * 1993-02-16 2000-05-29 ブラザー工業株式会社 液滴噴射装置
JP2924664B2 (ja) * 1994-09-28 1999-07-26 住友電気工業株式会社 微細セラミックス構造体の形成方法
JP3890634B2 (ja) * 1995-09-19 2007-03-07 セイコーエプソン株式会社 圧電体薄膜素子及びインクジェット式記録ヘッド
NL1004016C2 (nl) * 1996-09-12 1998-03-13 Oce Tech Bv Inktstraal-drukkop.
JP3820665B2 (ja) * 1997-02-17 2006-09-13 コニカミノルタホールディングス株式会社 インクジェットヘッドの製造方法
US6107726A (en) * 1997-07-25 2000-08-22 Materials Systems, Inc. Serpentine cross-section piezoelectric linear actuator

Also Published As

Publication number Publication date
US6265139B1 (en) 2001-07-24
DE19928807B4 (de) 2006-12-28
GB2345380A (en) 2000-07-05
DE19928807A1 (de) 2000-07-20
GB9914720D0 (en) 1999-08-25
JP2000196163A (ja) 2000-07-14
FR2788386A1 (fr) 2000-07-13
JP3393093B2 (ja) 2003-04-07
GB2345380B (en) 2001-03-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080229