FR2784514B1 - Procede de controle d'un laser semiconducteur unipolaire - Google Patents
Procede de controle d'un laser semiconducteur unipolaireInfo
- Publication number
- FR2784514B1 FR2784514B1 FR9812812A FR9812812A FR2784514B1 FR 2784514 B1 FR2784514 B1 FR 2784514B1 FR 9812812 A FR9812812 A FR 9812812A FR 9812812 A FR9812812 A FR 9812812A FR 2784514 B1 FR2784514 B1 FR 2784514B1
- Authority
- FR
- France
- Prior art keywords
- controlling
- semiconductor laser
- single pole
- pole semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9812812A FR2784514B1 (fr) | 1998-10-13 | 1998-10-13 | Procede de controle d'un laser semiconducteur unipolaire |
PCT/FR1999/002457 WO2000022704A1 (fr) | 1998-10-13 | 1999-10-12 | Procede de controle d'un laser semiconducteur unipolaire |
EP99947549A EP1038342A1 (fr) | 1998-10-13 | 1999-10-12 | Procede de controle d'un laser semiconducteur unipolaire |
US09/581,169 US6738404B1 (en) | 1998-10-13 | 1999-10-12 | Method for controlling a unipolar semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9812812A FR2784514B1 (fr) | 1998-10-13 | 1998-10-13 | Procede de controle d'un laser semiconducteur unipolaire |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2784514A1 FR2784514A1 (fr) | 2000-04-14 |
FR2784514B1 true FR2784514B1 (fr) | 2001-04-27 |
Family
ID=9531493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9812812A Expired - Lifetime FR2784514B1 (fr) | 1998-10-13 | 1998-10-13 | Procede de controle d'un laser semiconducteur unipolaire |
Country Status (4)
Country | Link |
---|---|
US (1) | US6738404B1 (fr) |
EP (1) | EP1038342A1 (fr) |
FR (1) | FR2784514B1 (fr) |
WO (1) | WO2000022704A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2365620A (en) | 2000-08-07 | 2002-02-20 | Imperial College | Optical wavelength shifting by semiconductor intersubband laser |
FR2834130B1 (fr) * | 2001-12-20 | 2005-02-18 | Thales Sa | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
DE10227168A1 (de) * | 2002-06-18 | 2004-01-15 | Infineon Technologies Ag | Vorrichtung zur optischen Signalübertragung, Verfahren zur optischen Signalübertragung und optischer Modulator |
CN1681923B (zh) | 2002-07-18 | 2010-06-02 | 孟山都技术有限公司 | 利用人工的多核苷酸及其组合物来减少转基因沉默的方法 |
DE602007003480D1 (de) * | 2007-10-11 | 2010-01-07 | Alcatel Lucent | Lasermodul und Verfahren zur Herstellung eines Lasermoduls |
FR2934712B1 (fr) * | 2008-08-01 | 2010-08-27 | Thales Sa | Procede de fabrication d'un dispositif optique d'analyse comportant un laser a cascades quantiques et un detecteur quantique. |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01212487A (ja) * | 1988-02-19 | 1989-08-25 | Fujitsu Ltd | 波長可変半導体レーザ |
US5633512A (en) * | 1990-05-23 | 1997-05-27 | Canon Kabushiki Kaisha | Semiconductor device for varying the mobility of electrons by light irradiation |
US5166946A (en) * | 1990-10-12 | 1992-11-24 | Martin Marietta Corporation | Apparatus for and method of controlling the emission of a laser |
US5509025A (en) * | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
US5563902A (en) * | 1994-08-23 | 1996-10-08 | Samsung Electronics, Co. Ltd. | Semiconductor ridge waveguide laser with lateral current injection |
FR2734097B1 (fr) | 1995-05-12 | 1997-06-06 | Thomson Csf | Laser a semiconducteurs |
FR2736168B1 (fr) | 1995-06-30 | 1997-07-25 | Thomson Csf | Convertisseur de frequence comprenant un guide semiconducteur a heterostructure |
FR2757684B1 (fr) | 1996-12-20 | 1999-03-26 | Thomson Csf | Detecteur infrarouge a structure quantique, non refroidie |
US5995529A (en) * | 1997-04-10 | 1999-11-30 | Sandia Corporation | Infrared light sources with semimetal electron injection |
-
1998
- 1998-10-13 FR FR9812812A patent/FR2784514B1/fr not_active Expired - Lifetime
-
1999
- 1999-10-12 US US09/581,169 patent/US6738404B1/en not_active Expired - Lifetime
- 1999-10-12 EP EP99947549A patent/EP1038342A1/fr not_active Ceased
- 1999-10-12 WO PCT/FR1999/002457 patent/WO2000022704A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FR2784514A1 (fr) | 2000-04-14 |
WO2000022704A1 (fr) | 2000-04-20 |
US6738404B1 (en) | 2004-05-18 |
EP1038342A1 (fr) | 2000-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
PLFP | Fee payment |
Year of fee payment: 18 |
|
CL | Concession to grant licences |
Name of requester: MIRSENSE, FR Effective date: 20160610 |
|
PLFP | Fee payment |
Year of fee payment: 19 |
|
PLFP | Fee payment |
Year of fee payment: 20 |