DE602007003480D1 - Lasermodul und Verfahren zur Herstellung eines Lasermoduls - Google Patents
Lasermodul und Verfahren zur Herstellung eines LasermodulsInfo
- Publication number
- DE602007003480D1 DE602007003480D1 DE602007003480T DE602007003480T DE602007003480D1 DE 602007003480 D1 DE602007003480 D1 DE 602007003480D1 DE 602007003480 T DE602007003480 T DE 602007003480T DE 602007003480 T DE602007003480 T DE 602007003480T DE 602007003480 D1 DE602007003480 D1 DE 602007003480D1
- Authority
- DE
- Germany
- Prior art keywords
- laser module
- producing
- laser
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1234—Actively induced grating, e.g. acoustically or electrically induced
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07291239A EP2048753B1 (de) | 2007-10-11 | 2007-10-11 | Lasermodul und Verfahren zur Herstellung eines Lasermoduls |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007003480D1 true DE602007003480D1 (de) | 2010-01-07 |
Family
ID=39145115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007003480T Active DE602007003480D1 (de) | 2007-10-11 | 2007-10-11 | Lasermodul und Verfahren zur Herstellung eines Lasermoduls |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP2048753B1 (de) |
DE (1) | DE602007003480D1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020112806A1 (de) | 2020-05-12 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserbauelement und verfahren zum betrieb zumindest eines halbleiterlasers |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5821888A (ja) | 1981-07-31 | 1983-02-08 | Omron Tateisi Electronics Co | 可変波長半導体レ−ザ |
JPH01212487A (ja) * | 1988-02-19 | 1989-08-25 | Fujitsu Ltd | 波長可変半導体レーザ |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
JP3689483B2 (ja) * | 1996-03-29 | 2005-08-31 | アンリツ株式会社 | 多重波長発振レーザ |
US6363097B1 (en) * | 1998-09-18 | 2002-03-26 | Nec Corporation | Semiconductor laser with a rewritable wavelength stabilizer |
FR2784514B1 (fr) * | 1998-10-13 | 2001-04-27 | Thomson Csf | Procede de controle d'un laser semiconducteur unipolaire |
JP2007035784A (ja) * | 2005-07-25 | 2007-02-08 | Sumitomo Electric Ind Ltd | 分布帰還型半導体レーザ |
-
2007
- 2007-10-11 DE DE602007003480T patent/DE602007003480D1/de active Active
- 2007-10-11 EP EP07291239A patent/EP2048753B1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP2048753A1 (de) | 2009-04-15 |
EP2048753B1 (de) | 2009-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |