FR2695261B1 - Laser émetteur en surface et son procédé de fabrication. - Google Patents
Laser émetteur en surface et son procédé de fabrication.Info
- Publication number
- FR2695261B1 FR2695261B1 FR9309860A FR9309860A FR2695261B1 FR 2695261 B1 FR2695261 B1 FR 2695261B1 FR 9309860 A FR9309860 A FR 9309860A FR 9309860 A FR9309860 A FR 9309860A FR 2695261 B1 FR2695261 B1 FR 2695261B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- emitting laser
- surface emitting
- laser
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4215233A JPH0669585A (ja) | 1992-08-12 | 1992-08-12 | 面発光半導体レーザ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2695261A1 FR2695261A1 (fr) | 1994-03-04 |
FR2695261B1 true FR2695261B1 (fr) | 1995-01-27 |
Family
ID=16668922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9309860A Expired - Fee Related FR2695261B1 (fr) | 1992-08-12 | 1993-08-11 | Laser émetteur en surface et son procédé de fabrication. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5373520A (fr) |
JP (1) | JPH0669585A (fr) |
FR (1) | FR2695261B1 (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100363503B1 (ko) * | 1994-01-20 | 2003-02-05 | 세이코 엡슨 가부시키가이샤 | 표면방출형반도체레이저와그제조방법 |
JPH0846283A (ja) * | 1994-07-28 | 1996-02-16 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
US5978401A (en) * | 1995-10-25 | 1999-11-02 | Honeywell Inc. | Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver |
JPH09232631A (ja) * | 1996-02-27 | 1997-09-05 | Sumitomo Chem Co Ltd | 3−5族化合物半導体発光素子 |
US5956362A (en) * | 1996-02-27 | 1999-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of etching |
US5774487A (en) * | 1996-10-16 | 1998-06-30 | Honeywell Inc. | Filamented multi-wavelength vertical-cavity surface emitting laser |
US5835521A (en) * | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
US6905900B1 (en) | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
US7065124B2 (en) | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
US6990135B2 (en) | 2002-10-28 | 2006-01-24 | Finisar Corporation | Distributed bragg reflector for optoelectronic device |
US6727520B2 (en) | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
TWI227799B (en) | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
US6782027B2 (en) | 2000-12-29 | 2004-08-24 | Finisar Corporation | Resonant reflector for use with optoelectronic devices |
US6836501B2 (en) * | 2000-12-29 | 2004-12-28 | Finisar Corporation | Resonant reflector for increased wavelength and polarization control |
US6606199B2 (en) | 2001-10-10 | 2003-08-12 | Honeywell International Inc. | Graded thickness optical element and method of manufacture therefor |
JP2002185043A (ja) * | 2001-10-19 | 2002-06-28 | Sumitomo Chem Co Ltd | 3−5族化合物半導体発光素子の製造方法 |
US6965626B2 (en) | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
US6813293B2 (en) | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
US7075962B2 (en) | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
US7277461B2 (en) | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
US7149383B2 (en) | 2003-06-30 | 2006-12-12 | Finisar Corporation | Optical system with reduced back reflection |
US6961489B2 (en) | 2003-06-30 | 2005-11-01 | Finisar Corporation | High speed optical system |
US7210857B2 (en) | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
US6887801B2 (en) | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
US7031363B2 (en) | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
JP4160597B2 (ja) * | 2004-01-07 | 2008-10-01 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
JP4116587B2 (ja) * | 2004-04-13 | 2008-07-09 | 浜松ホトニクス株式会社 | 半導体発光素子及びその製造方法 |
US7596165B2 (en) | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
US7829912B2 (en) | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
US7920612B2 (en) | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
JP4943052B2 (ja) * | 2006-04-27 | 2012-05-30 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム |
US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
JP2010236642A (ja) * | 2009-03-31 | 2010-10-21 | Denso Corp | コネクタ |
US8216405B2 (en) * | 2009-05-28 | 2012-07-10 | Microsoft Corporation | Making an optic with a cladding |
EP3497758A1 (fr) * | 2016-08-08 | 2019-06-19 | Finisar Corporation | Vcsel planarisé gravé |
WO2021038680A1 (fr) * | 2019-08-26 | 2021-03-04 | 日本電信電話株式会社 | Laser à émission par la surface et son procédé de production |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60110188A (ja) * | 1983-11-18 | 1985-06-15 | Sharp Corp | 半導体レ−ザ素子 |
JPH01319983A (ja) * | 1988-06-22 | 1989-12-26 | Canon Inc | 面発光型半導対レーザ素子 |
JPH0252486A (ja) * | 1988-08-17 | 1990-02-22 | Res Dev Corp Of Japan | 面発光型半導体レーザの製造方法 |
US5038356A (en) * | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
JP2596195B2 (ja) * | 1990-08-20 | 1997-04-02 | 日本電気株式会社 | 垂直共振器型面入出力光電融合素子 |
JP2616185B2 (ja) * | 1990-09-05 | 1997-06-04 | 日本電気株式会社 | 半導体レーザ |
US5237581A (en) * | 1990-11-14 | 1993-08-17 | Nec Corporation | Semiconductor multilayer reflector and light emitting device with the same |
US5208820A (en) * | 1991-01-08 | 1993-05-04 | Nec Corporation | Optical device with low-resistive multi-level reflecting structure |
US5226053A (en) * | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
-
1992
- 1992-08-12 JP JP4215233A patent/JPH0669585A/ja not_active Withdrawn
-
1993
- 1993-08-11 US US08/104,643 patent/US5373520A/en not_active Expired - Lifetime
- 1993-08-11 FR FR9309860A patent/FR2695261B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5373520A (en) | 1994-12-13 |
JPH0669585A (ja) | 1994-03-11 |
FR2695261A1 (fr) | 1994-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110502 |