JP2596195B2 - 垂直共振器型面入出力光電融合素子 - Google Patents

垂直共振器型面入出力光電融合素子

Info

Publication number
JP2596195B2
JP2596195B2 JP21883390A JP21883390A JP2596195B2 JP 2596195 B2 JP2596195 B2 JP 2596195B2 JP 21883390 A JP21883390 A JP 21883390A JP 21883390 A JP21883390 A JP 21883390A JP 2596195 B2 JP2596195 B2 JP 2596195B2
Authority
JP
Japan
Prior art keywords
layer
surface input
fusion device
vertical resonator
type surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21883390A
Other languages
English (en)
Other versions
JPH04101483A (ja
Inventor
英男 小坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21883390A priority Critical patent/JP2596195B2/ja
Priority to CA002049448A priority patent/CA2049448C/en
Priority to DE69120614T priority patent/DE69120614T2/de
Priority to EP91113897A priority patent/EP0474018B1/en
Priority to US07/747,561 priority patent/US5229627A/en
Publication of JPH04101483A publication Critical patent/JPH04101483A/ja
Application granted granted Critical
Publication of JP2596195B2 publication Critical patent/JP2596195B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は高並列な光伝送や光情報処理に用いられる垂
直共振器型面入出力光電融合素子（VC−VSTEP）に関す
る。
（従来の技術） 半導体基板に垂直方向に入出力する面入出力素子はコ
ンピュータ間のデータ伝送や、光コンピューテイングに
欠かせないキーデバイスとなる。面入出力素子としては
第３図に示した従来の面入出力光電融合素子（LED−VST
EP）があるが、これは垂直方向には自然放出モードの発
光である。また、第４図に示した誘導放出モードVSTEP
（LD−VSTEP）も開発されているが、これは基板に水平
方向に共振器があり、端面に45゜ミラーを形成すること
によって基板に垂直方向へ発光させるようにしたもので
ある（アプライド・フィジクス・レターズ（Appl.Phys.
Lett.）の54巻、23号、1989年の329〜331頁に記載）。
ここでいう垂直共振器VSTEPは基板に垂直方向に共振器
を形成したVSETPをいう。
（発明が解決しようとする課題） 従来のLED−VSTEPは自然放出モードでの発光のため、
電気−光変換効率や周波数応答性、出射光ビーム
の指向性などの点で応用上問題がある。また、LD−VSTE
Pについても、基板に水平方向の共振器のための素子
が小型化できない、吸収層・活性層分離型のため同一
波長での光吸収効率が低く、縦続接続を考えた場合には
光感度が低下する点で好ましくないという問題があっ
た。
本発明の目的は、45゜なしで基板に垂直方向に誘導放
出モードで発光し、しかも上記のような問題点を解決し
た垂直共振器型面入出力光電融合素子、VSTEPを提供す
ることにある。
（課題を解決するための手段） 本発明を垂直共振器型面入出力光電融合素子はpnpn構
造と、そのpnpn構造の中に光吸収層兼活性層として動作
する量子井戸層とを有し、該量子の上下にガイド層を備
え、このガイド層の上下に多層膜反射鏡を備え、前記量
子井戸層とガイド層からなる中間層の層厚が媒質内発振
波長の整数倍であることを特徴とする。
（作用） 中央部の量子井戸層は、オフ時には吸収層として、オ
ン時には活性層として働く。この構造の特徴は、垂直共
振器構造による吸収増大効果と、吸収波長域と発振波長
の一致が期待できる点にある。
第２図は多層膜の反射鏡と中間層での光強度分布と屈
折率分布を示す図である。すなわち、上下多層膜反射鏡
の層数を最適化することによって、第２図に示すように
中間層での光強度の増大が起こり、吸収層（＝活性層）
厚が100Åと非常に薄いにも関わらず吸収率99.92％を得
ることができる。また、通常レーザを発振波長は活性層
の吸収領域よりも低エネルギー側にあるため、発振波長
では吸収層（＝活性層）の吸収係数が小さくなってしま
うという問題があるが、この素子では、オフ時には吸収
層に逆バイアスが印加され、それに伴う量子閉じ込め光
シュタルク効果（QCSE）で吸収域が長波長方向にシフト
するので、それによってレーザ光は効率よく吸収され
る。
（実施例） 第１図は本発明の適用した垂直共振器型VSTEPの断面
図である。ｎ−GaAs基板１の上にｎ型半導体多層膜（ド
ーピング濃度５×1017cm-3）２、ｐ−GaAs（ドーピング
濃度１×1019cm-3、層厚50Å）３、ノンドープのGaAs
（層厚〜1500Å）４、量子井戸層となるノンドープのIn
0.2Ga0.8As（濃度100Å）５、ノンドープのGaAs（層厚
〜500Å）６、ｎ−GaAs（ドーピング濃度３×1017c
m-3、層厚〜1000Å）７、ｐ型半導体多層膜（ドーピン
グ濃度５×1018cm-3）８が、分子線ビームエピタキシー
法で形成されている。ｎ型半導体多層膜２ではｎ−GaAS
9とｎ−AlAs10とがそれぞれ厚さ約672Åと804Åに設定
されていて交互に10ペア積層され、形成されている。ｐ
型半導体多層膜８でも同様にｐ−GaAs11とｐ−AlAs12と
がそれぞれ厚さ約672Aと804Aに設定されていて交互に30
ペア積層され、形成されている。３〜７よりなる中間層
の層厚はレーザ発振の媒質内波長（ここでは共振波長、
9500Åとして約0.3μｍ）の整数倍に設定されている。
バイアス電圧は上下のｎ型電極13、ｐ型電極14によって
印加され、光入出力はｎ−GaAS基板を通して行われる。
本実施例の素子はオフ時に吸収率99.92％の吸収層と
して動作し、オン時には活性層として働く。
（発明の効果） 本発明を適用するならば、45゜ミラーを用いずに基板
に垂直方向にレーザ発振し、しかもレーザ発振と同一の
波長で非常に高受光効率のVSTEPが実現できる。本実施
例では半導体材料の場合について説明したが他の材料系
の場合に対しても適用できる。
【図面の簡単な説明】
第１図は本発明の垂直共振器型VSTEPの断面図。第２図
は吸収増大効果を説明するための図。第３図は従来のLE
D−VSTEPの断面図。第４図は従来のLD−VSTEPの断面
図。 図に於て、１はｎ−GaAs基板、２はｎ型半導体多層膜、
３はｐ−GaAs、４はノンドープのGaAs、５は活性層とな
るノンドープのIn0.2Ga0.8As、６はノンドープのGaAs、
７はｎ−GaAs、８はｐ型半導体多層膜、９はｎ−GaAs、
10はｎ−AlAs、11はｐ−GaAs、12はｐ−AlAs、13はｎ型
電極、14はｐ型電極。
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭63−158883（ＪＰ，Ａ) Ｊ．Ａｐｐｌ．Ｐｈｙｓ．59［２ ］（1986）Ｐ．596−600 Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．54 ［４］（1989）Ｐ．329−331 Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．56 ［14］（1990）Ｐ．1308−1310 Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．58 ［12］（1991）Ｐ．1250−1252

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】pnpn構造と、pnpn構造の中に光吸収層兼活
    性層として動作する量子井戸層とを有し、該量子井戸層
    の上下にガイド層を備え、該ガイド層の上下に多層膜反
    射鏡を備え、前記量子井戸層と前記ガイド層からなる中
    間層の層厚が媒質内発振波長の整数倍であることを特徴
    とする垂直共振器型面入出力光電融合素子。
JP21883390A 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子 Expired - Lifetime JP2596195B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP21883390A JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子
CA002049448A CA2049448C (en) 1990-08-20 1991-08-19 Vertical cavity type vertical to surface transmission electrophotonic device
DE69120614T DE69120614T2 (de) 1990-08-20 1991-08-20 Elektrophotonische Vorrichtung mit vertikalem Resonator vom "vertical to surface" Übertragungstyp
EP91113897A EP0474018B1 (en) 1990-08-20 1991-08-20 Vertical cavity type vertical to surface transmission electrophotonic device
US07/747,561 US5229627A (en) 1990-08-20 1991-08-20 Vertical cavity type vertical to surface transmission electrophotonic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21883390A JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子

Publications (2)

Publication Number Publication Date
JPH04101483A JPH04101483A (ja) 1992-04-02
JP2596195B2 true JP2596195B2 (ja) 1997-04-02

Family

ID=16726058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21883390A Expired - Lifetime JP2596195B2 (ja) 1990-08-20 1990-08-20 垂直共振器型面入出力光電融合素子

Country Status (5)

Country Link
US (1) US5229627A (ja)
EP (1) EP0474018B1 (ja)
JP (1) JP2596195B2 (ja)
CA (1) CA2049448C (ja)
DE (1) DE69120614T2 (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525828A (en) * 1991-10-31 1996-06-11 International Business Machines Corporation High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
JP2874442B2 (ja) * 1992-04-10 1999-03-24 日本電気株式会社 面入出力光電融合素子
JPH0669585A (ja) * 1992-08-12 1994-03-11 Fujitsu Ltd 面発光半導体レーザ及びその製造方法
JPH0793419B2 (ja) * 1992-11-04 1995-10-09 日本電気株式会社 受光発光集積素子
US5362977A (en) * 1992-12-28 1994-11-08 At&T Bell Laboratories Single mirror light-emitting diodes with enhanced intensity
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors
JP3207590B2 (ja) * 1993-03-15 2001-09-10 富士通株式会社 光半導体装置
US5498863A (en) * 1993-04-30 1996-03-12 At&T Corp. Wavelength-sensitive detectors based on absorbers in standing waves
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity
KR0147589B1 (ko) * 1994-05-31 1998-10-15 김광호 수직공진기 면발광 레이저 다이오드를 이용한 광픽엎
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5701327A (en) * 1996-04-30 1997-12-23 Lucent Technologies Inc. Saturable Bragg reflector structure and process for fabricating the same
US5828088A (en) * 1996-09-05 1998-10-27 Astropower, Inc. Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6603784B1 (en) 1998-12-21 2003-08-05 Honeywell International Inc. Mechanical stabilization of lattice mismatched quantum wells
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6384462B1 (en) * 2000-12-06 2002-05-07 Nova Crystals, Inc. Planar hetero-interface photodetector
US6826219B2 (en) * 2002-03-14 2004-11-30 Gigatera Ag Semiconductor saturable absorber device, and laser
KR100576718B1 (ko) * 2003-12-24 2006-05-03 한국전자통신연구원 실리콘 발광 소자
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
KR102496476B1 (ko) * 2015-11-19 2023-02-06 삼성전자주식회사 전자기파 반사체 및 이를 포함하는 광학소자
KR102666433B1 (ko) 2016-12-06 2024-05-14 삼성디스플레이 주식회사 유기발광 표시장치
CN112736644B (zh) * 2021-03-30 2021-06-11 南昌凯捷半导体科技有限公司 一种用于车载雷达的高功率vcsel及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738457B2 (ja) * 1986-07-18 1995-04-26 株式会社東芝 光・電子双安定素子
US5028969A (en) * 1988-09-13 1991-07-02 Nec Corporation Semiconductor device for a space modulation matrix and method for driving a space modulation matrix
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5012486A (en) * 1990-04-06 1991-04-30 At&T Bell Laboratories Vertical cavity semiconductor laser with lattice-mismatched mirror stack

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５４［４］（１９８９）Ｐ．３２９−３３１
Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５６［１４］（１９９０）Ｐ．１３０８−１３１０
Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．５８［１２］（１９９１）Ｐ．１２５０−１２５２
Ｊ．Ａｐｐｌ．Ｐｈｙｓ．５９［２］（１９８６）Ｐ．５９６−６００

Also Published As

Publication number Publication date
DE69120614D1 (de) 1996-08-08
JPH04101483A (ja) 1992-04-02
US5229627A (en) 1993-07-20
EP0474018A3 (en) 1992-05-13
EP0474018A2 (en) 1992-03-11
EP0474018B1 (en) 1996-07-03
CA2049448C (en) 1994-07-26
CA2049448A1 (en) 1992-02-21
DE69120614T2 (de) 1997-02-20

Similar Documents

Publication Publication Date Title
JP2596195B2 (ja) 垂直共振器型面入出力光電融合素子
US5212706A (en) Laser diode assembly with tunnel junctions and providing multiple beams
US6879615B2 (en) FCSEL that frequency doubles its output emissions using sum-frequency generation
JP2006114894A (ja) トンネル接合を備えた高出力レーザー素子、及び該レーザー素子用のレーザーポンピング部
US5289018A (en) Light emitting device utilizing cavity quantum electrodynamics
JPH06196681A (ja) 受光発光集積素子
JP2863773B2 (ja) 面発光型半導体レーザ装置
JP2783086B2 (ja) 半導体レーザ装置および光接続装置
JPH07162081A (ja) 光素子
JP2006229222A (ja) 変調器内蔵型の光ポンピング半導体レーザー素子
JPH05152674A (ja) 外部変調器付き面発光半導体レーザ
JP2001358403A (ja) 面発光レーザ
JP2976001B2 (ja) 光半導体装置
JPH07193325A (ja) 半導体発光装置
JPH0563301A (ja) 半導体光素子および光通信システム
JPS61114588A (ja) 光双安定集積素子
Iga Semiconductor Lasers and VCSEL history
JPH065984A (ja) 半導体レーザ及びその製造方法
JPH08340146A (ja) 面発光型半導体レーザ
JP3215531B2 (ja) 光増幅器
JP2500619B2 (ja) 面発光素子
JPH03240285A (ja) 双安定半導体レーザ
JPH04249368A (ja) 面型半導体光スイッチ
JPH04218990A (ja) 双安定半導体レーザ
JPH0621581A (ja) 半導体面型光スイッチ

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080109

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090109

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100109

Year of fee payment: 13

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110109

Year of fee payment: 14

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110109

Year of fee payment: 14