DE69404701T2 - Abstimmbarer oberflächenemittierender Halbleiterlaser - Google Patents
Abstimmbarer oberflächenemittierender HalbleiterlaserInfo
- Publication number
- DE69404701T2 DE69404701T2 DE69404701T DE69404701T DE69404701T2 DE 69404701 T2 DE69404701 T2 DE 69404701T2 DE 69404701 T DE69404701 T DE 69404701T DE 69404701 T DE69404701 T DE 69404701T DE 69404701 T2 DE69404701 T2 DE 69404701T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- surface emitting
- emitting semiconductor
- tunable surface
- tunable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/28—Function characteristic focussing or defocussing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/0622—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/026,364 US5301201A (en) | 1993-03-01 | 1993-03-01 | Article comprising a tunable semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69404701D1 DE69404701D1 (de) | 1997-09-11 |
DE69404701T2 true DE69404701T2 (de) | 1998-02-26 |
Family
ID=21831388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69404701T Expired - Fee Related DE69404701T2 (de) | 1993-03-01 | 1994-02-23 | Abstimmbarer oberflächenemittierender Halbleiterlaser |
Country Status (4)
Country | Link |
---|---|
US (1) | US5301201A (de) |
EP (1) | EP0614256B1 (de) |
JP (1) | JPH06318765A (de) |
DE (1) | DE69404701T2 (de) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4965749A (en) * | 1989-06-30 | 1990-10-23 | The Gerber Scientific Instrument Company | Method and apparatus providing skip line asynchronous imaging |
DE10353951A1 (de) * | 2003-11-18 | 2005-06-16 | U-L-M Photonics Gmbh | Polarisationskontrolle von Vertikaldiodenlasern durch ein monolothisch integriertes Oberflächengitter |
US5633453A (en) * | 1993-01-19 | 1997-05-27 | Mayo Foundation For Medical Education And Research | Universal penetration test apparatus and method |
US5866801A (en) * | 1993-01-19 | 1999-02-02 | Regents Of The University Of California | Universal penetration test apparatus with fluid penetration sensor |
EP0614255B1 (de) * | 1993-03-04 | 1997-09-10 | AT&T Corp. | Vorrichtung mit fokussierendem oberflächenemittierendem Halbleiterlaser |
US5418802A (en) * | 1993-11-12 | 1995-05-23 | Eastman Kodak Company | Frequency tunable waveguide extended cavity laser |
US5530715A (en) * | 1994-11-29 | 1996-06-25 | Motorola, Inc. | Vertical cavity surface emitting laser having continuous grading |
US5621525A (en) * | 1995-02-06 | 1997-04-15 | University Of Central Florida | Apparatus and method for measuring the power density of a laser beam with a liquid crystal |
CA2231396C (en) * | 1995-09-29 | 2001-02-27 | British Telecommunications Public Limited Company | Optically resonant structure |
US5757829A (en) * | 1996-04-29 | 1998-05-26 | Motorola, Inc. | Flip chip power monitoring system for vertical cavity surface emitting lasers |
US6243407B1 (en) * | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
WO1999012235A1 (en) * | 1997-09-05 | 1999-03-11 | Micron Optics, Inc. | Tunable fiber fabry-perot surface-emitting lasers |
US5991326A (en) | 1998-04-14 | 1999-11-23 | Bandwidth9, Inc. | Lattice-relaxed verticle optical cavities |
US6487230B1 (en) | 1998-04-14 | 2002-11-26 | Bandwidth 9, Inc | Vertical cavity apparatus with tunnel junction |
WO1999057528A1 (en) | 1998-05-02 | 1999-11-11 | Focal, Inc. | Light source power tester |
JP3559453B2 (ja) * | 1998-06-29 | 2004-09-02 | 株式会社東芝 | 発光素子 |
US6891664B2 (en) | 1999-03-22 | 2005-05-10 | Finisar Corporation | Multistage tunable gain optical amplifier |
US6445495B1 (en) * | 1999-03-22 | 2002-09-03 | Genoa Corporation | Tunable-gain lasing semiconductor optical amplifier |
TW437104B (en) * | 1999-05-25 | 2001-05-28 | Wang Tien Yang | Semiconductor light-emitting device and method for manufacturing the same |
US6181717B1 (en) | 1999-06-04 | 2001-01-30 | Bandwidth 9 | Tunable semiconductor laser system |
US6577658B1 (en) | 1999-09-20 | 2003-06-10 | E20 Corporation, Inc. | Method and apparatus for planar index guided vertical cavity surface emitting lasers |
US6835963B2 (en) * | 1999-12-22 | 2004-12-28 | Kabushiki Kaisha Toshiba | Light-emitting element and method of fabrication thereof |
NL1015714C2 (nl) * | 2000-07-14 | 2002-01-15 | Dsm Nv | Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur. |
US6636544B2 (en) * | 2000-12-06 | 2003-10-21 | Applied Optoelectronics, Inc. | Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays |
US6628696B2 (en) | 2001-01-19 | 2003-09-30 | Siros Technologies, Inc. | Multi-channel DWDM transmitter based on a vertical cavity surface emitting laser |
FR2825524B1 (fr) * | 2001-06-05 | 2007-01-26 | Get Enst Bretagne | Laser amplificateur a cavite verticale |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6717964B2 (en) * | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
US20030013219A1 (en) * | 2001-07-13 | 2003-01-16 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing electro-optic structures |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6947453B2 (en) * | 2002-01-17 | 2005-09-20 | Optitune Plc | Tunable diffractive device |
US6953702B2 (en) * | 2002-05-16 | 2005-10-11 | Agilent Technologies, Inc. | Fixed wavelength vertical cavity optical devices and method of manufacture therefor |
US6671425B1 (en) | 2002-06-18 | 2003-12-30 | Celight | Method and system for acoustically tuning a light source |
US6829281B2 (en) * | 2002-06-19 | 2004-12-07 | Finisar Corporation | Vertical cavity surface emitting laser using photonic crystals |
US6704343B2 (en) | 2002-07-18 | 2004-03-09 | Finisar Corporation | High power single mode vertical cavity surface emitting laser |
JP2004087903A (ja) * | 2002-08-28 | 2004-03-18 | Yokogawa Electric Corp | 面発光レーザ |
US6778581B1 (en) * | 2002-09-24 | 2004-08-17 | Finisar Corporation | Tunable vertical cavity surface emitting laser |
US6810056B1 (en) | 2002-09-26 | 2004-10-26 | Finisar Corporation | Single mode vertical cavity surface emitting laser using photonic crystals with a central defect |
WO2004036700A2 (en) * | 2002-10-15 | 2004-04-29 | Micron Optics, Inc. | Waferless fiber fabry-perot filters |
AU2002952347A0 (en) * | 2002-10-30 | 2002-11-14 | Edith Cowan University | Optical amplifier |
US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
EP1583989A4 (de) * | 2002-12-20 | 2006-07-05 | Micron Optics Inc | Temperatur kompensierter ferrulen halter für einen fabry-perot-faserfilter |
JP4439199B2 (ja) * | 2003-03-20 | 2010-03-24 | 株式会社リコー | 垂直共振器型面発光半導体レーザ装置、およびそれを用いた光論理演算装置、波長変換装置、光パルス波形整形装置、ならびに光伝送システム |
FR2855661A1 (fr) * | 2003-05-26 | 2004-12-03 | Optogone Sa | Laser a cavite verticale et a emission surfacique, systeme de telecommunication et procede correspondant |
US20050271325A1 (en) * | 2004-01-22 | 2005-12-08 | Anderson Michael H | Liquid crystal waveguide having refractive shapes for dynamically controlling light |
US8463080B1 (en) | 2004-01-22 | 2013-06-11 | Vescent Photonics, Inc. | Liquid crystal waveguide having two or more control voltages for controlling polarized light |
US7720116B2 (en) * | 2004-01-22 | 2010-05-18 | Vescent Photonics, Inc. | Tunable laser having liquid crystal waveguide |
US8989523B2 (en) | 2004-01-22 | 2015-03-24 | Vescent Photonics, Inc. | Liquid crystal waveguide for dynamically controlling polarized light |
US8860897B1 (en) | 2004-01-22 | 2014-10-14 | Vescent Photonics, Inc. | Liquid crystal waveguide having electric field orientated for controlling light |
CA2589452C (en) * | 2004-11-29 | 2015-01-27 | Alight Technologies A/S | Single-mode photonic-crystal vcsels |
US20070030873A1 (en) * | 2005-08-03 | 2007-02-08 | Finisar Corporation | Polarization control in VCSELs using photonics crystals |
KR100850718B1 (ko) * | 2007-01-17 | 2008-08-06 | 삼성전자주식회사 | 스펙클 저감 레이저 |
WO2009084692A1 (ja) * | 2007-12-28 | 2009-07-09 | Nippon Telegraph And Telephone Corporation | 可変焦点レンズ |
US9366938B1 (en) * | 2009-02-17 | 2016-06-14 | Vescent Photonics, Inc. | Electro-optic beam deflector device |
US8995038B1 (en) | 2010-07-06 | 2015-03-31 | Vescent Photonics, Inc. | Optical time delay control device |
CN102916342B (zh) * | 2012-10-28 | 2014-12-03 | 北京工业大学 | 内腔液晶可调谐垂直腔面发射激光器及其制备方法 |
WO2014175447A1 (ja) | 2013-04-26 | 2014-10-30 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
US9793681B2 (en) * | 2013-07-16 | 2017-10-17 | Hamamatsu Photonics K.K. | Semiconductor laser device |
CN103618211B (zh) * | 2013-11-18 | 2016-04-06 | 北京工业大学 | 表面液晶-垂直腔面发射激光器及其制备方法 |
JP6489836B2 (ja) * | 2015-01-09 | 2019-03-27 | 浜松ホトニクス株式会社 | 半導体レーザ装置 |
US10305251B2 (en) * | 2016-05-11 | 2019-05-28 | Hewlett Packard Enterprise Development Lp | Laser diodes with layer of graphene |
US9843160B1 (en) * | 2016-12-29 | 2017-12-12 | X Development Llc | Integrated digital laser |
CN111799654B (zh) * | 2020-09-09 | 2021-01-22 | 常州纵慧芯光半导体科技有限公司 | 一种激光器及其制造方法与应用 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6291914A (ja) * | 1985-10-18 | 1987-04-27 | Hitachi Ltd | 可変焦点光学系と、これを利用した自動焦点合わせ装置 |
JPS641290A (en) * | 1987-06-23 | 1989-01-05 | Mitsubishi Electric Corp | Semiconductor laser device |
JP2528886B2 (ja) * | 1987-07-16 | 1996-08-28 | 富士通株式会社 | 半導体発光装置 |
JPH0311689A (ja) * | 1989-06-08 | 1991-01-18 | Fujikura Ltd | 面発光型波長制御dbrレーザ |
JPH0346384A (ja) * | 1989-07-14 | 1991-02-27 | Nec Corp | 面型波長可変発光素子 |
JPH03260633A (ja) * | 1990-03-12 | 1991-11-20 | Nippon Telegr & Teleph Corp <Ntt> | ファイバ型マルチバンド光アンプ |
JPH0548195A (ja) * | 1991-08-12 | 1993-02-26 | Nippon Telegr & Teleph Corp <Ntt> | 波長可変面発光レーザ |
-
1993
- 1993-03-01 US US08/026,364 patent/US5301201A/en not_active Expired - Lifetime
-
1994
- 1994-02-23 DE DE69404701T patent/DE69404701T2/de not_active Expired - Fee Related
- 1994-02-23 EP EP94301283A patent/EP0614256B1/de not_active Expired - Lifetime
- 1994-03-04 JP JP6033997A patent/JPH06318765A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0614256A1 (de) | 1994-09-07 |
DE69404701D1 (de) | 1997-09-11 |
US5301201A (en) | 1994-04-05 |
EP0614256B1 (de) | 1997-08-06 |
JPH06318765A (ja) | 1994-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |