FR2622053B1 - Dispositif integre de protection contre l'injection de charges dans le substrat - Google Patents

Dispositif integre de protection contre l'injection de charges dans le substrat

Info

Publication number
FR2622053B1
FR2622053B1 FR888813123A FR8813123A FR2622053B1 FR 2622053 B1 FR2622053 B1 FR 2622053B1 FR 888813123 A FR888813123 A FR 888813123A FR 8813123 A FR8813123 A FR 8813123A FR 2622053 B1 FR2622053 B1 FR 2622053B1
Authority
FR
France
Prior art keywords
loads
substrate
protection against
integrated device
against injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR888813123A
Other languages
English (en)
Other versions
FR2622053A1 (fr
Inventor
Franco Bertotti
Paolo Ferrari
Maria Terasa Gatti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of FR2622053A1 publication Critical patent/FR2622053A1/fr
Application granted granted Critical
Publication of FR2622053B1 publication Critical patent/FR2622053B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR888813123A 1987-10-15 1988-10-06 Dispositif integre de protection contre l'injection de charges dans le substrat Expired - Lifetime FR2622053B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8722290A IT1231894B (it) 1987-10-15 1987-10-15 Dispositivo integrato per schermare l'iniezione di cariche nel substrato.

Publications (2)

Publication Number Publication Date
FR2622053A1 FR2622053A1 (fr) 1989-04-21
FR2622053B1 true FR2622053B1 (fr) 1992-02-07

Family

ID=11194242

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888813123A Expired - Lifetime FR2622053B1 (fr) 1987-10-15 1988-10-06 Dispositif integre de protection contre l'injection de charges dans le substrat

Country Status (5)

Country Link
US (1) US5021860A (fr)
JP (1) JP2681498B2 (fr)
DE (1) DE3834841C2 (fr)
FR (1) FR2622053B1 (fr)
IT (1) IT1231894B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
JPH05102175A (ja) * 1991-10-07 1993-04-23 Sharp Corp 半導体装置の製造方法
US5408122A (en) * 1993-12-01 1995-04-18 Eastman Kodak Company Vertical structure to minimize settling times for solid state light detectors
US5514901A (en) * 1994-05-17 1996-05-07 Allegro Microsystems, Inc. Epitaxial island with adjacent asymmetrical structure to reduce collection of injected current from the island into other islands
US5545917A (en) * 1994-05-17 1996-08-13 Allegro Microsystems, Inc. Separate protective transistor
US5475340A (en) * 1994-05-23 1995-12-12 Delco Electronics Corporation Active biasing circuit for an epitaxial region in a fault-tolerant, vertical pnp output transistor
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
JP3513610B2 (ja) * 1996-04-19 2004-03-31 株式会社ルネサステクノロジ 半導体装置
JP3513609B2 (ja) * 1996-04-19 2004-03-31 株式会社ルネサステクノロジ 半導体装置
DE69629458T2 (de) * 1996-05-10 2004-06-24 Allegro Microsystems, Inc., Worcester Ein gesonderter Schutztransistor zur Verminderung des injizierten Stroms von einer PN-Übergangsisolationsinsel zur anderen
US5777352A (en) * 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
WO2003005449A1 (fr) * 2001-07-03 2003-01-16 Tripath Technology, Inc. Connexion de substrat dans un circuit d'alimentation integre
US6787858B2 (en) * 2002-10-16 2004-09-07 Freescale Semiconductor, Inc. Carrier injection protection structure
US6815780B1 (en) * 2003-04-15 2004-11-09 Motorola, Inc. Semiconductor component with substrate injection protection structure
EP1508918A1 (fr) * 2003-08-22 2005-02-23 Freescale Semiconductor, Inc. Dispositif semi-conducteur de puissance
DE10350162B4 (de) * 2003-10-28 2011-07-28 Infineon Technologies AG, 81669 Halbleiterbauteil
FR2884050B1 (fr) * 2005-04-01 2007-07-20 St Microelectronics Sa Circuit integre comprenant un substrat et une resistance
DE102006013203B3 (de) * 2006-03-22 2008-01-10 Infineon Technologies Ag Integrierte Halbleiteranordnung mit Rückstromkomplex zur Verringerung eines Substratstroms und Verfahren zu deren Herstellung
US7898783B2 (en) * 2006-08-10 2011-03-01 Texas Instruments Incorporated Methods and apparatus to reduce substrate voltage bounces and spike voltages in switching amplifiers
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor
US7538396B2 (en) * 2007-01-19 2009-05-26 Episil Technologies Inc. Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
US7514754B2 (en) * 2007-01-19 2009-04-07 Episil Technologies Inc. Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem
KR101418396B1 (ko) * 2007-11-19 2014-07-10 페어차일드코리아반도체 주식회사 전력 반도체 소자
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof
WO2013179078A1 (fr) 2012-05-30 2013-12-05 Freescale Semiconductor, Inc. Dispositif semi-conducteur en boîtier, dispositif à semi-conducteur et procédé de fabrication d'un dispositif à semi-conducteur en boîtier
FR3083919A1 (fr) * 2018-07-13 2020-01-17 Stmicroelectronics (Rousset) Sas Puce electronique protegee

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890634A (en) * 1970-10-23 1975-06-17 Philips Corp Transistor circuit
US3931634A (en) * 1973-06-14 1976-01-06 Rca Corporation Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action
JPS5153483A (fr) * 1974-11-06 1976-05-11 Hitachi Ltd
US4233618A (en) * 1978-07-31 1980-11-11 Sprague Electric Company Integrated circuit with power transistor
JPS5599740A (en) * 1979-01-25 1980-07-30 Toko Inc Semiconductor device
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
US4496849A (en) * 1982-02-22 1985-01-29 General Motors Corporation Power transistor protection from substrate injection
DE3507181A1 (de) * 1985-03-01 1986-09-04 IC - Haus GmbH, 6501 Bodenheim Schaltungsanordnung zur vermeidung parasitaerer substrat-effekte in integrierten schaltkreisen
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi

Also Published As

Publication number Publication date
JP2681498B2 (ja) 1997-11-26
FR2622053A1 (fr) 1989-04-21
IT8722290A0 (it) 1987-10-15
DE3834841A1 (de) 1989-05-24
US5021860A (en) 1991-06-04
IT1231894B (it) 1992-01-15
JPH01134960A (ja) 1989-05-26
DE3834841C2 (de) 1999-03-18

Similar Documents

Publication Publication Date Title
FR2622053B1 (fr) Dispositif integre de protection contre l'injection de charges dans le substrat
FR2613397B1 (fr) Dispositif d'egout sous vide
DK461688A (da) Indretning til beskyttelse af oplagrede genstande
FR2596097B1 (fr) Dispositif de verrouillage d'un chassis ouvrant
FR2694198B1 (fr) Dispositif de protection d'aiguille d'injection.
KR880700869A (ko) 음극 보호 장치
IT8921898A0 (it) Procedimento e dispositivo per l'applicazione di fascette su confezioni.
DE69013631D1 (de) Einkristallsilizium.
FR2636381B1 (fr) Dispositif d'assemblage pour profiles
FR2620572B1 (fr) Dispositif photovoltaique
NO934505D0 (no) Fremgangsmaate for fremstilling av en organisk vaeske
FR2620271B1 (fr) Dispositif semiconducteur de protection contre les surtensions
FI904120A0 (fi) Laite alapään pysäyttimen kiinnittämiseksi vetoketjunauhaan
FR2621184B1 (fr) Dispositif de protection contre les surtensions
FR2635474B3 (fr) Dispositif d'enduction
FR2616470B3 (fr) Dispositif d'etaiement d'elements muraux
KR900011879A (ko) 광학적 할성화합물과 액정조성물 및 그 액정장치.
FR2642277B1 (fr) Dispositif destine a faciliter l'introduction d'un pied dans un article chaussant, notamment a tige
FR2660026B1 (fr) Dispositif d'ancrage.
FR2642162B1 (fr) Dispositif de securite pour charges largables
KR890005926U (ko) 브라운관 기판 보호장치
FR2640019B1 (fr) Dispositif d'etancheite
DK579889A (da) Elektrooptisk halvlederkomponent
IT8953523V0 (it) Dispositivo di raccordo perfezionato per l'alimentazione di un iniettore
CS370987A1 (en) Protective element for silicon plate's tape with semiconductor structure

Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse