FR2884050B1 - Circuit integre comprenant un substrat et une resistance - Google Patents

Circuit integre comprenant un substrat et une resistance

Info

Publication number
FR2884050B1
FR2884050B1 FR0503201A FR0503201A FR2884050B1 FR 2884050 B1 FR2884050 B1 FR 2884050B1 FR 0503201 A FR0503201 A FR 0503201A FR 0503201 A FR0503201 A FR 0503201A FR 2884050 B1 FR2884050 B1 FR 2884050B1
Authority
FR
France
Prior art keywords
substrate
resistance
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0503201A
Other languages
English (en)
Other versions
FR2884050A1 (fr
Inventor
Denis Cottin
Thierry Schwartzmann
Jean Charles Vildeuil
Bertrand Martinet
Sophie Taupin
Mathieu Marin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0503201A priority Critical patent/FR2884050B1/fr
Priority to US11/385,044 priority patent/US7714390B2/en
Publication of FR2884050A1 publication Critical patent/FR2884050A1/fr
Application granted granted Critical
Publication of FR2884050B1 publication Critical patent/FR2884050B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0503201A 2005-04-01 2005-04-01 Circuit integre comprenant un substrat et une resistance Expired - Fee Related FR2884050B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0503201A FR2884050B1 (fr) 2005-04-01 2005-04-01 Circuit integre comprenant un substrat et une resistance
US11/385,044 US7714390B2 (en) 2005-04-01 2006-03-20 Integrated circuit comprising a substrate and a resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0503201A FR2884050B1 (fr) 2005-04-01 2005-04-01 Circuit integre comprenant un substrat et une resistance

Publications (2)

Publication Number Publication Date
FR2884050A1 FR2884050A1 (fr) 2006-10-06
FR2884050B1 true FR2884050B1 (fr) 2007-07-20

Family

ID=35423324

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0503201A Expired - Fee Related FR2884050B1 (fr) 2005-04-01 2005-04-01 Circuit integre comprenant un substrat et une resistance

Country Status (2)

Country Link
US (1) US7714390B2 (fr)
FR (1) FR2884050B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492801B2 (en) * 2007-05-11 2013-07-23 System General Corp. Semiconductor structure with high breakdown voltage and resistance
US9184097B2 (en) * 2009-03-12 2015-11-10 System General Corporation Semiconductor devices and formation methods thereof

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* Cited by examiner, † Cited by third party
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JPS55138267A (en) * 1979-04-12 1980-10-28 Matsushita Electric Ind Co Ltd Manufacture of semiconductor integrated circuit containing resistance element
JPS566463A (en) * 1979-06-27 1981-01-23 Hitachi Ltd Integrated resistor
US4544937A (en) * 1983-04-01 1985-10-01 Sperry Corporation Formation of normal resistors by degenerate doping of substrates
US4560583A (en) * 1984-06-29 1985-12-24 International Business Machines Corporation Resistor design system
GB8426897D0 (en) * 1984-10-24 1984-11-28 Ferranti Plc Fabricating semiconductor devices
JPS621259A (ja) * 1985-06-26 1987-01-07 Sharp Corp 半導体抵抗素子の形成方法
JPS6386565A (ja) 1986-09-30 1988-04-16 Fuji Electric Co Ltd 半導体装置の製造方法
IT1231894B (it) * 1987-10-15 1992-01-15 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato.
JPH01268050A (ja) * 1988-04-19 1989-10-25 Sony Corp 拡散抵抗素子
JPH01268048A (ja) * 1988-04-19 1989-10-25 Sony Corp 拡散抵抗素子
JPH03155661A (ja) * 1989-08-02 1991-07-03 Nec Corp Ｃｍｏｓトランジスタのｎウェルの製造方法
JPH04266047A (ja) * 1991-02-20 1992-09-22 Fujitsu Ltd 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置
KR930006732B1 (ko) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법
US5204541A (en) * 1991-06-28 1993-04-20 Texas Instruments Incorporated Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
US5302534A (en) * 1992-03-02 1994-04-12 Motorola, Inc. Forming a vertical PNP transistor
US5545909A (en) * 1994-10-19 1996-08-13 Siliconix Incorporated Electrostatic discharge protection device for integrated circuit
US5506528A (en) * 1994-10-31 1996-04-09 International Business Machines Corporation High speed off-chip CMOS receiver
US5679593A (en) * 1996-02-01 1997-10-21 Micron Technology, Inc. Method of fabricating a high resistance integrated circuit resistor
TW335557B (en) * 1996-04-29 1998-07-01 Philips Electronics Nv Semiconductor device
US5883566A (en) * 1997-02-24 1999-03-16 International Business Machines Corporation Noise-isolated buried resistor
JPH11297847A (ja) * 1998-04-13 1999-10-29 Nec Kyushu Ltd 半導体装置及びその製造方法
US5994759A (en) * 1998-11-06 1999-11-30 National Semiconductor Corporation Semiconductor-on-insulator structure with reduced parasitic capacitance
US6169310B1 (en) * 1998-12-03 2001-01-02 National Semiconductor Corporation Electrostatic discharge protection device
DE19917370C1 (de) * 1999-04-16 2000-10-05 St Microelectronics Gmbh In einer integrierten halbleiterschaltung gebildeter weitgehend spannungsunabhängiger elektrischer Widerstand
US6180478B1 (en) * 1999-04-19 2001-01-30 Industrial Technology Research Institute Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitance
KR100302189B1 (ko) * 1999-10-05 2001-11-02 윤종용 에스.오.아이(ｓｏｉ)구조를 갖는 반도체 소자 및 그 제조방법
US6218866B1 (en) * 1999-10-12 2001-04-17 National Semiconductor Corporation Semiconductor device for prevention of a floating gate condition on an input node of a MOS logic circuit and a method for its manufacture
TW511268B (en) * 2000-04-21 2002-11-21 Winbond Electronics Corp Output buffer with excellent electrostatic discharge protection effect
JP4599660B2 (ja) * 2000-05-24 2010-12-15 ソニー株式会社 半導体抵抗素子を有する半導体装置とその製造方法
US6690082B2 (en) * 2001-09-28 2004-02-10 Agere Systems Inc. High dopant concentration diffused resistor and method of manufacture therefor
JP4744103B2 (ja) * 2004-06-28 2011-08-10 富士通セミコンダクター株式会社 抵抗素子を含む半導体装置及びその製造方法
US7910450B2 (en) * 2006-02-22 2011-03-22 International Business Machines Corporation Method of fabricating a precision buried resistor

Also Published As

Publication number Publication date
US20060226512A1 (en) 2006-10-12
FR2884050A1 (fr) 2006-10-06
US7714390B2 (en) 2010-05-11

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231