FR2533369B1 - Circuit de protection pour dispositifs a circuit integre et structure de semi-conducteur pour proteger un circuit integre - Google Patents
Circuit de protection pour dispositifs a circuit integre et structure de semi-conducteur pour proteger un circuit integreInfo
- Publication number
- FR2533369B1 FR2533369B1 FR8315020A FR8315020A FR2533369B1 FR 2533369 B1 FR2533369 B1 FR 2533369B1 FR 8315020 A FR8315020 A FR 8315020A FR 8315020 A FR8315020 A FR 8315020A FR 2533369 B1 FR2533369 B1 FR 2533369B1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- protecting
- semiconductor structure
- circuit
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Protection Of Static Devices (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Details Of Television Scanning (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/421,517 US4484244A (en) | 1982-09-22 | 1982-09-22 | Protection circuit for integrated circuit devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2533369A1 FR2533369A1 (fr) | 1984-03-23 |
FR2533369B1 true FR2533369B1 (fr) | 1987-10-30 |
Family
ID=23670862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8315020A Expired FR2533369B1 (fr) | 1982-09-22 | 1983-09-21 | Circuit de protection pour dispositifs a circuit integre et structure de semi-conducteur pour proteger un circuit integre |
Country Status (7)
Country | Link |
---|---|
US (1) | US4484244A (fr) |
JP (1) | JPH069018B2 (fr) |
CA (1) | CA1195432A (fr) |
DE (1) | DE3333896C2 (fr) |
FR (1) | FR2533369B1 (fr) |
GB (1) | GB2128829B (fr) |
IT (1) | IT1171088B (fr) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3422132C1 (de) * | 1984-06-14 | 1986-01-09 | Texas Instruments Deutschland Gmbh, 8050 Freising | Schutzschaltungsanordnung |
SE455552B (sv) * | 1985-02-26 | 1988-07-18 | Asea Ab | Halvledaranordning innefattande en overspenningsskyddskrets |
US4633283A (en) * | 1985-03-11 | 1986-12-30 | Rca Corporation | Circuit and structure for protecting integrated circuits from destructive transient voltages |
US4665459A (en) * | 1985-04-01 | 1987-05-12 | Motorola, Inc. | Method and circuit for dissipating stored inductive energy |
IT1215281B (it) * | 1985-06-28 | 1990-01-31 | Ates Componenti Elettron | Apparecchio e metodo per la protezione da transitori di tensione/corrente. |
IT1186337B (it) * | 1985-10-29 | 1987-11-26 | Sgs Microelettronica Spa | Dispositivo elettronico per la protezione di circuiti integrati da cariche elettrostatiche,e procedimento per la sua fabbricazione |
US5012317A (en) * | 1986-04-11 | 1991-04-30 | Texas Instruments Incorporated | Electrostatic discharge protection circuit |
US5077591A (en) * | 1986-09-30 | 1991-12-31 | Texas Instruments Incorporated | Electrostatic discharge protection for semiconductor input devices |
US4750078A (en) * | 1987-06-15 | 1988-06-07 | Motorola, Inc. | Semiconductor protection circuit having both positive and negative high voltage protection |
US4835416A (en) * | 1987-08-31 | 1989-05-30 | National Semiconductor Corporation | VDD load dump protection circuit |
JPH01267985A (ja) * | 1988-04-20 | 1989-10-25 | Fuji Photo Film Co Ltd | 発熱抵抗体の駆動回路 |
US4924341A (en) * | 1988-04-20 | 1990-05-08 | Texas Instruments Incorporated | Transient protector |
US4870530A (en) * | 1988-06-27 | 1989-09-26 | Advanced Micro Devices, Inc. | Electrostatic discharge protection circuitry for any two external pins of an I.C. package |
US4876620A (en) * | 1988-09-29 | 1989-10-24 | Northern Telecom Limited | Protection devices and arrangements for telephone lines |
US4849846A (en) * | 1988-12-16 | 1989-07-18 | Northern Telecom Limited | Telephone protection circuit |
US4896243A (en) * | 1988-12-20 | 1990-01-23 | Texas Instruments Incorporated | Efficient ESD input protection scheme |
US4980741A (en) * | 1989-02-10 | 1990-12-25 | General Electric Company | MOS protection device |
GB8911360D0 (en) * | 1989-05-17 | 1989-07-05 | Sarnoff David Res Center | Electronic charge protection devices |
US5274262A (en) * | 1989-05-17 | 1993-12-28 | David Sarnoff Research Center, Inc. | SCR protection structure and circuit with reduced trigger voltage |
US5072273A (en) * | 1990-05-04 | 1991-12-10 | David Sarnoff Research Center, Inc. | Low trigger voltage SCR protection device and structure |
JP3375659B2 (ja) * | 1991-03-28 | 2003-02-10 | テキサス インスツルメンツ インコーポレイテツド | 静電放電保護回路の形成方法 |
US5359211A (en) * | 1991-07-18 | 1994-10-25 | Harris Corporation | High voltage protection using SCRs |
US5144157A (en) * | 1991-09-23 | 1992-09-01 | Raytheon Company | Pin diode driver circuit for radar system |
US5182220A (en) * | 1992-04-02 | 1993-01-26 | United Microelectronics Corporation | CMOS on-chip ESD protection circuit and semiconductor structure |
GB2268328B (en) * | 1992-06-30 | 1995-09-06 | Texas Instruments Ltd | A capacitor with electrostatic discharge protection |
US5600525A (en) * | 1994-08-17 | 1997-02-04 | David Sarnoff Research Center Inc | ESD protection circuit for integrated circuit |
US5519242A (en) * | 1994-08-17 | 1996-05-21 | David Sarnoff Research Center, Inc. | Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor |
US5610425A (en) * | 1995-02-06 | 1997-03-11 | Motorola, Inc. | Input/output electrostatic discharge protection circuit for an integrated circuit |
US5675469A (en) * | 1995-07-12 | 1997-10-07 | Motorola, Inc. | Integrated circuit with electrostatic discharge (ESD) protection and ESD protection circuit |
EP0785576A3 (fr) * | 1995-09-29 | 1998-10-07 | Texas Instruments Incorporated | Circuit comprenant des moyens de protection |
US5644459A (en) * | 1995-11-02 | 1997-07-01 | Integrated Devices Technology | Bipolarity electrostatic discharge protection device and method for making same |
KR100206870B1 (ko) * | 1995-11-28 | 1999-07-01 | 구본준 | 정전 방전 및 래치 업 방지회로 |
US5654661A (en) * | 1995-12-05 | 1997-08-05 | Reltec Corporation | Drive circuit for SCR device |
US5663860A (en) * | 1996-06-28 | 1997-09-02 | Harris Corporation | High voltage protection circuits |
US7327541B1 (en) | 1998-06-19 | 2008-02-05 | National Semiconductor Corporation | Operation of dual-directional electrostatic discharge protection device |
US6365924B1 (en) * | 1998-06-19 | 2002-04-02 | National Semiconductor Corporation | Dual direction over-voltage and over-current IC protection device and its cell structure |
US6188088B1 (en) | 1999-07-08 | 2001-02-13 | Maxim Integrated Products, Inc. | Electrostatic discharge protection for analog switches |
US6674129B1 (en) | 1999-12-17 | 2004-01-06 | Koninklijke Phillips Electronics N.V. | ESD diode structure |
US6501630B1 (en) * | 1999-12-17 | 2002-12-31 | Koninklijke Philips Electronics N.V. | Bi-directional ESD diode structure |
US6538266B2 (en) | 2000-08-11 | 2003-03-25 | Samsung Electronics Co., Ltd. | Protection device with a silicon-controlled rectifier |
GB0030992D0 (en) * | 2000-12-20 | 2001-01-31 | Power Innovations Ltd | Overvoltage protection circuit |
AU2002235347A1 (en) * | 2001-01-09 | 2002-07-24 | Broadcom Corporation | Sub-micron high input voltage tolerant input output (i/o) circuit |
JP4176564B2 (ja) * | 2003-06-23 | 2008-11-05 | 株式会社東芝 | ウェハ移載装置及びこれを用いた半導体装置の製造方法 |
US7566914B2 (en) * | 2005-07-07 | 2009-07-28 | Intersil Americas Inc. | Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits |
US7538409B2 (en) * | 2006-06-07 | 2009-05-26 | International Business Machines Corporation | Semiconductor devices |
US9305687B2 (en) * | 2010-05-13 | 2016-04-05 | Cyntec Co., Ltd. | Current sensing resistor |
US9025296B2 (en) * | 2011-01-06 | 2015-05-05 | Littelfuse, Inc. | Transient voltage suppressor |
US8536012B2 (en) | 2011-07-06 | 2013-09-17 | International Business Machines Corporation | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases |
US8796729B2 (en) * | 2012-11-20 | 2014-08-05 | Analog Devices, Inc. | Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same |
US9093491B2 (en) | 2012-12-05 | 2015-07-28 | International Business Machines Corporation | Bipolar junction transistors with reduced base-collector junction capacitance |
US8956945B2 (en) | 2013-02-04 | 2015-02-17 | International Business Machines Corporation | Trench isolation for bipolar junction transistors in BiCMOS technology |
US9281682B2 (en) | 2013-03-12 | 2016-03-08 | Micron Technology, Inc. | Apparatuses and method for over-voltage event protection |
US9251839B1 (en) | 2013-05-24 | 2016-02-02 | Western Digital Technologies, Inc. | Data storage device with overvoltage protection |
JP2014241537A (ja) * | 2013-06-12 | 2014-12-25 | 株式会社東芝 | 静電気保護回路 |
US9304560B2 (en) | 2013-06-19 | 2016-04-05 | Western Digital Technologies, Inc. | Backup power for reducing host current transients |
US9564796B1 (en) | 2014-01-15 | 2017-02-07 | Western Digital Technologies, Inc. | Power circuit with overvoltage protection |
US9722419B2 (en) * | 2014-12-02 | 2017-08-01 | Nxp Usa, Inc. | Electrostatic discharge protection |
US10177564B2 (en) | 2015-09-25 | 2019-01-08 | Nxp Usa, Inc. | Hot plugging protection |
CN113540070B (zh) * | 2020-04-20 | 2023-12-12 | 长鑫存储技术有限公司 | 静电保护电路 |
EP4020551A4 (fr) * | 2020-05-12 | 2022-12-28 | Changxin Memory Technologies, Inc. | Circuit de protection électrostatique |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB877040A (en) * | 1959-06-26 | 1961-09-13 | Racal Engineering Ltd | Improvements in or relating to radio receivers |
US3401319A (en) * | 1966-03-08 | 1968-09-10 | Gen Micro Electronics Inc | Integrated latch circuit |
GB1191763A (en) * | 1968-04-02 | 1970-05-13 | Ass Elect Ind | Improvements in or relating to Protective Arrangements for Transformers |
DE1901075A1 (de) * | 1969-01-10 | 1970-08-13 | Bosch Gmbh Robert | Zweipoliges elektrisches Schaltelement |
GB1288383A (fr) * | 1969-01-28 | 1972-09-06 | ||
US3573550A (en) * | 1969-03-07 | 1971-04-06 | M & T Chemicals Inc | Automatically resetting transient protection device |
JPS5321838B2 (fr) * | 1973-02-28 | 1978-07-05 | ||
GB1467057A (en) * | 1973-05-24 | 1977-03-16 | Rca Corp | Amplifier with over-current protection |
JPS515633U (fr) * | 1974-06-28 | 1976-01-16 | ||
JPS5332362A (en) * | 1976-09-07 | 1978-03-27 | Seiko Instr & Electronics Ltd | Constant voltage electronic circuit |
JPS53120159A (en) * | 1977-03-30 | 1978-10-20 | Hitachi Ltd | Voltage clamp circuit |
US4114072A (en) * | 1977-07-26 | 1978-09-12 | Rca Corporation | High voltage protection circuit having predictable firing point |
JPS5434044A (en) * | 1977-08-19 | 1979-03-13 | Seiko Instr & Electronics Ltd | Constant voltage circuit |
US4264941A (en) * | 1979-02-14 | 1981-04-28 | National Semiconductor Corporation | Protective circuit for insulated gate field effect transistor integrated circuits |
JPS55113358A (en) * | 1979-02-23 | 1980-09-01 | Hitachi Ltd | Semiconductor device |
US4288830A (en) * | 1979-04-16 | 1981-09-08 | The Boeing Company | Overvoltage protector |
JPS5662355A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Electrostatic breakage preventive element |
JPS5710822A (en) * | 1980-06-23 | 1982-01-20 | Toshiba Corp | Integrated circuit device |
IT1150062B (it) * | 1980-11-19 | 1986-12-10 | Ates Componenti Elettron | Protezione di ingresso per circuito integrato di tipo mos, a bassa tensione di alimentazione e ad alta densita' di integrazione |
GB2088634B (en) * | 1980-12-03 | 1984-08-15 | Rca Corp | Protection circuit for integrated circuit devices |
IT1151504B (it) * | 1981-01-30 | 1986-12-24 | Rca Corp | Circuito di protezione per dispositivi a circuito integrato |
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
JPS5948951A (ja) * | 1982-09-14 | 1984-03-21 | Toshiba Corp | 半導体保護装置 |
-
1982
- 1982-09-22 US US06/421,517 patent/US4484244A/en not_active Expired - Lifetime
-
1983
- 1983-09-13 GB GB08324445A patent/GB2128829B/en not_active Expired
- 1983-09-16 CA CA000436839A patent/CA1195432A/fr not_active Expired
- 1983-09-20 DE DE3333896A patent/DE3333896C2/de not_active Expired - Lifetime
- 1983-09-20 JP JP58174037A patent/JPH069018B2/ja not_active Expired - Lifetime
- 1983-09-21 FR FR8315020A patent/FR2533369B1/fr not_active Expired
- 1983-09-21 IT IT22946/83A patent/IT1171088B/it active
Also Published As
Publication number | Publication date |
---|---|
IT8322946A1 (it) | 1985-03-21 |
DE3333896A1 (de) | 1984-03-22 |
CA1195432A (fr) | 1985-10-15 |
GB8324445D0 (en) | 1983-10-12 |
DE3333896C2 (de) | 1994-04-14 |
JPS5990120A (ja) | 1984-05-24 |
IT8322946A0 (it) | 1983-09-21 |
JPH069018B2 (ja) | 1994-02-02 |
GB2128829B (en) | 1986-01-15 |
FR2533369A1 (fr) | 1984-03-23 |
IT1171088B (it) | 1987-06-10 |
GB2128829A (en) | 1984-05-02 |
US4484244A (en) | 1984-11-20 |
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