FR2406288A1 - CHARGE TRANSFER DEVICE - Google Patents

CHARGE TRANSFER DEVICE

Info

Publication number
FR2406288A1
FR2406288A1 FR7828997A FR7828997A FR2406288A1 FR 2406288 A1 FR2406288 A1 FR 2406288A1 FR 7828997 A FR7828997 A FR 7828997A FR 7828997 A FR7828997 A FR 7828997A FR 2406288 A1 FR2406288 A1 FR 2406288A1
Authority
FR
France
Prior art keywords
analog
charge transfer
charge
electrode
transfer device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7828997A
Other languages
French (fr)
Other versions
FR2406288B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2406288A1 publication Critical patent/FR2406288A1/en
Application granted granted Critical
Publication of FR2406288B1 publication Critical patent/FR2406288B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Analogue/Digital Conversion (AREA)
  • Filters That Use Time-Delay Elements (AREA)

Abstract

L'invention concerne une nouvelle méthode pour traiter les signaux dans des dispositifs de transfert de charge dans lesquels au moins une électrode de commande doit remplir deux fonctions. D'une part, l'électrode est utilisée normalement pour le transfert de la charge alors que d'autre part elle est utilisée comme électrode de blocage pour arrêter la charge sous-Jacente durant au moins une phase d'horloge. Par cette méthode, on peut réaliser de manière simple et peu coûteuse des filtres, des convertisseurs analogiques-numériques, et des convertisseurs numériques-analogiques. Application : convertisseurs analogiques-numériques.The invention relates to a new method for processing signals in charge transfer devices in which at least one control electrode is to perform two functions. On the one hand, the electrode is normally used for the transfer of the charge while on the other hand it is used as a blocking electrode to stop the underlying charge during at least one clock phase. By this method, filters, analog-to-digital converters, and digital-to-analog converters can be produced in a simple and inexpensive manner. Application: analog-to-digital converters.

FR7828997A 1977-10-13 1978-10-11 CHARGE TRANSFER DEVICE Granted FR2406288A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7711228,A NL186666C (en) 1977-10-13 1977-10-13 CARGO TRANSFER.
NLAANVRAGE7801242,A NL186788C (en) 1977-10-13 1978-02-03 CARGO TRANSFER.

Publications (2)

Publication Number Publication Date
FR2406288A1 true FR2406288A1 (en) 1979-05-11
FR2406288B1 FR2406288B1 (en) 1983-01-07

Family

ID=26645353

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7828997A Granted FR2406288A1 (en) 1977-10-13 1978-10-11 CHARGE TRANSFER DEVICE

Country Status (11)

Country Link
US (1) US4266146A (en)
JP (1) JPS5465465A (en)
BE (1) BE871174A (en)
CA (1) CA1135858A (en)
DE (1) DE2844248C3 (en)
ES (1) ES474113A1 (en)
FR (1) FR2406288A1 (en)
GB (1) GB2005948B (en)
IT (1) IT1099379B (en)
NL (2) NL186666C (en)
SE (1) SE438931B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55164937U (en) * 1979-05-17 1980-11-27
DE2936682A1 (en) * 1979-09-11 1981-09-10 Siemens AG, 1000 Berlin und 8000 München INPUT STAGE FOR A MONOLITICALLY INTEGRATED LOAD SHIFTING ARRANGEMENT
DE3019437C2 (en) * 1980-05-21 1985-08-29 Siemens AG, 1000 Berlin und 8000 München CTD line consisting of several CTD elements
JPS62230053A (en) * 1986-03-31 1987-10-08 Toshiba Corp Charge transfer device
JPS6316670A (en) * 1986-07-09 1988-01-23 Fuji Photo Film Co Ltd Delay element using charge coupled device
NL8701030A (en) * 1987-05-01 1988-12-01 Philips Nv LOAD-COUPLED DEVICE.
US5653153A (en) * 1996-02-09 1997-08-05 Greenwald; Christopher L. On-vehicle brake lathe and alignment device therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2271716A1 (en) * 1974-05-16 1975-12-12 Western Electric Co

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919468A (en) * 1972-11-27 1975-11-11 Rca Corp Charge transfer circuits
US3876952A (en) * 1973-05-02 1975-04-08 Rca Corp Signal processing circuits for charge-transfer, image-sensing arrays
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US3931463A (en) * 1974-07-23 1976-01-06 Rca Corporation Scene brightness compensation system with charge transfer imager
US4031315A (en) * 1974-09-27 1977-06-21 Siemens Aktiengesellschaft Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation
FR2349236A1 (en) * 1976-04-23 1977-11-18 Thomson Csf INPUT STAGE FOR LOAD TRANSFER LOW PASS FILTER AND LOW PASS FILTER INCLUDING SUCH INPUT STAGE

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2271716A1 (en) * 1974-05-16 1975-12-12 Western Electric Co

Also Published As

Publication number Publication date
IT1099379B (en) 1985-09-18
ES474113A1 (en) 1979-05-01
IT7828601A0 (en) 1978-10-10
GB2005948A (en) 1979-04-25
NL186666C (en) 1992-03-16
US4266146A (en) 1981-05-05
NL186666B (en) 1990-08-16
GB2005948B (en) 1982-03-31
DE2844248B2 (en) 1980-05-14
SE438931B (en) 1985-05-13
FR2406288B1 (en) 1983-01-07
DE2844248A1 (en) 1979-04-19
JPS5533188B2 (en) 1980-08-29
BE871174A (en) 1979-04-11
CA1135858A (en) 1982-11-16
NL7801242A (en) 1979-08-07
JPS5465465A (en) 1979-05-26
NL7711228A (en) 1979-04-18
NL186788C (en) 1991-02-18
SE7810569L (en) 1979-04-14
DE2844248C3 (en) 1981-02-05

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