FR2401489B1 - - Google Patents

Info

Publication number
FR2401489B1
FR2401489B1 FR7821335A FR7821335A FR2401489B1 FR 2401489 B1 FR2401489 B1 FR 2401489B1 FR 7821335 A FR7821335 A FR 7821335A FR 7821335 A FR7821335 A FR 7821335A FR 2401489 B1 FR2401489 B1 FR 2401489B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7821335A
Other languages
French (fr)
Other versions
FR2401489A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2401489A1 publication Critical patent/FR2401489A1/fr
Application granted granted Critical
Publication of FR2401489B1 publication Critical patent/FR2401489B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7821335A 1977-08-27 1978-07-12 Cellule de memoire integree monolithique et matrice d'emmagasinage en portant application Granted FR2401489A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2738678A DE2738678C3 (de) 1977-08-27 1977-08-27 Monolithisch integrierte Speicherzelle

Publications (2)

Publication Number Publication Date
FR2401489A1 FR2401489A1 (fr) 1979-03-23
FR2401489B1 true FR2401489B1 (de) 1982-02-05

Family

ID=6017443

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7821335A Granted FR2401489A1 (fr) 1977-08-27 1978-07-12 Cellule de memoire integree monolithique et matrice d'emmagasinage en portant application

Country Status (4)

Country Link
US (1) US4158237A (de)
DE (1) DE2738678C3 (de)
FR (1) FR2401489A1 (de)
GB (1) GB1586323A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4221977A (en) * 1978-12-11 1980-09-09 Motorola, Inc. Static I2 L ram
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
JPS594787B2 (ja) * 1979-12-28 1984-01-31 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 低インピ−ダンス感知増幅器を有し読取専用メモリ及び読取一書込メモリに共用可能なメモリ装置
US4404662A (en) * 1981-07-06 1983-09-13 International Business Machines Corporation Method and circuit for accessing an integrated semiconductor memory
US4555776A (en) * 1982-04-19 1985-11-26 International Business Machines Corporation Voltage balancing circuit for memory systems
IT1212765B (it) * 1983-07-27 1989-11-30 Ates Componenti Elettron Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.
JPS6048090A (ja) * 1983-08-26 1985-03-15 伊勢電子工業株式会社 螢光表示装置
US4813017A (en) * 1985-10-28 1989-03-14 International Business Machines Corportion Semiconductor memory device and array
US4992981A (en) * 1987-06-05 1991-02-12 International Business Machines Corporation Double-ended memory cell array using interleaved bit lines and method of fabrication therefore
US5040145A (en) * 1990-04-06 1991-08-13 International Business Machines Corporation Memory cell with active write load
US5020027A (en) * 1990-04-06 1991-05-28 International Business Machines Corporation Memory cell with active write load
US5276638A (en) * 1991-07-31 1994-01-04 International Business Machines Corporation Bipolar memory cell with isolated PNP load
US5297089A (en) * 1992-02-27 1994-03-22 International Business Machines Corporation Balanced bit line pull up circuitry for random access memories
JP2002048098A (ja) * 2000-08-02 2002-02-15 Mitsubishi Heavy Ind Ltd ターボ圧縮機および冷凍機

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1817498C3 (de) * 1968-12-30 1979-11-22 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Speicherzelle
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US4032902A (en) * 1975-10-30 1977-06-28 Fairchild Camera And Instrument Corporation An improved semiconductor memory cell circuit and structure
US4021786A (en) * 1975-10-30 1977-05-03 Fairchild Camera And Instrument Corporation Memory cell circuit and semiconductor structure therefore

Also Published As

Publication number Publication date
DE2738678B2 (de) 1981-06-19
DE2738678C3 (de) 1982-03-04
GB1586323A (en) 1981-03-18
FR2401489A1 (fr) 1979-03-23
DE2738678A1 (de) 1979-03-08
US4158237A (en) 1979-06-12

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Legal Events

Date Code Title Description
ST Notification of lapse