IT1212765B - Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile. - Google Patents

Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.

Info

Publication number
IT1212765B
IT1212765B IT8322256A IT2225683A IT1212765B IT 1212765 B IT1212765 B IT 1212765B IT 8322256 A IT8322256 A IT 8322256A IT 2225683 A IT2225683 A IT 2225683A IT 1212765 B IT1212765 B IT 1212765B
Authority
IT
Italy
Prior art keywords
electrically programmable
non volatile
ram type
programmable non
memory cell
Prior art date
Application number
IT8322256A
Other languages
English (en)
Other versions
IT8322256A0 (it
Inventor
Paolo Rosini
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8322256A priority Critical patent/IT1212765B/it
Publication of IT8322256A0 publication Critical patent/IT8322256A0/it
Priority to US06/572,453 priority patent/US4609999A/en
Priority to DE3424760A priority patent/DE3424760C2/de
Priority to GB08417636A priority patent/GB2145891B/en
Priority to FR848411909A priority patent/FR2549999B1/fr
Priority to JP59155715A priority patent/JPH0715796B2/ja
Application granted granted Critical
Publication of IT1212765B publication Critical patent/IT1212765B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
IT8322256A 1983-07-27 1983-07-27 Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile. IT1212765B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8322256A IT1212765B (it) 1983-07-27 1983-07-27 Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.
US06/572,453 US4609999A (en) 1983-07-27 1984-01-20 RAM memory cell with electrically programmable non-volatile memory element
DE3424760A DE3424760C2 (de) 1983-07-27 1984-07-05 Statische Speicherzelle mit elektrisch programmierbarem, nichtflüchtigem Speicherelement
GB08417636A GB2145891B (en) 1983-07-27 1984-07-11 Ram memory cell with electrically programmable non-volatile memory element
FR848411909A FR2549999B1 (fr) 1983-07-27 1984-07-26 Cellule de memoire du type ram comprenant un element de memoire non volatil electriquement programmable
JP59155715A JPH0715796B2 (ja) 1983-07-27 1984-07-27 不揮発性ｒａｍメモリセル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8322256A IT1212765B (it) 1983-07-27 1983-07-27 Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.

Publications (2)

Publication Number Publication Date
IT8322256A0 IT8322256A0 (it) 1983-07-27
IT1212765B true IT1212765B (it) 1989-11-30

Family

ID=11193746

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8322256A IT1212765B (it) 1983-07-27 1983-07-27 Cella di memoria di tipo ram con elemento di memoria non volatile elettricamente programmabile.

Country Status (6)

Country Link
US (1) US4609999A (it)
JP (1) JPH0715796B2 (it)
DE (1) DE3424760C2 (it)
FR (1) FR2549999B1 (it)
GB (1) GB2145891B (it)
IT (1) IT1212765B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4787066A (en) * 1987-08-03 1988-11-22 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with improved level shifting circuit and reduced tunnel device count for improved reliability
US4802124A (en) * 1987-08-03 1989-01-31 Sgs-Thomson Microelectronics, Inc. Non-volatile shadow storage cell with reduced tunnel device count for improved reliability
US5517634A (en) * 1992-06-23 1996-05-14 Quantum Corporation Disk drive system including a DRAM array and associated method for programming initial information into the array
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4132904A (en) * 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
DE2738678C3 (de) * 1977-08-27 1982-03-04 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Speicherzelle
US4207615A (en) * 1978-11-17 1980-06-10 Intel Corporation Non-volatile ram cell
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS5853089A (ja) * 1981-09-25 1983-03-29 Toshiba Corp 半導体不揮発性メモリセル

Also Published As

Publication number Publication date
IT8322256A0 (it) 1983-07-27
FR2549999A1 (fr) 1985-02-01
FR2549999B1 (fr) 1990-02-09
JPS6055595A (ja) 1985-03-30
DE3424760A1 (de) 1985-02-07
US4609999A (en) 1986-09-02
GB2145891A (en) 1985-04-03
GB8417636D0 (en) 1984-08-15
JPH0715796B2 (ja) 1995-02-22
DE3424760C2 (de) 1994-04-21
GB2145891B (en) 1986-12-17

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730