FR2382745A1 - MEMORY CELL - Google Patents
MEMORY CELLInfo
- Publication number
- FR2382745A1 FR2382745A1 FR7817176A FR7817176A FR2382745A1 FR 2382745 A1 FR2382745 A1 FR 2382745A1 FR 7817176 A FR7817176 A FR 7817176A FR 7817176 A FR7817176 A FR 7817176A FR 2382745 A1 FR2382745 A1 FR 2382745A1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- substrate
- manufacture
- provision
- isolated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Weting (AREA)
- Non-Volatile Memory (AREA)
Abstract
La présente invention concerne un procédé de fabrication de dispositif à semiconducteur. Selon ce procédé, on prévoit en cours de fabrication, la formation de couches de silicium polycristallin de recouvrement qui sont disposées au-dessus de portions sélectionnées d'un substrat semiconducteur 12 et isolées du substrat ainsi que l'une de l'autre. Application notamment à la fabrication de mémoires à accès aléatoire.The present invention relates to a method of manufacturing a semiconductor device. According to this method, during manufacture, provision is made for the formation of polycrystalline silicon covering layers which are arranged above selected portions of a semiconductor substrate 12 and isolated from the substrate as well as from one another. Application in particular to the manufacture of random access memories.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76239877A | 1977-01-26 | 1977-01-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2382745A1 true FR2382745A1 (en) | 1978-09-29 |
FR2382745B1 FR2382745B1 (en) | 1983-06-03 |
Family
ID=25064929
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7802068A Granted FR2382768A1 (en) | 1977-01-26 | 1978-01-25 | METHOD FOR PREPARING A SUBSTRATE SURFACE OF AN ISOPLANAR SEMICONDUCTOR DEVICE |
FR7817176A Granted FR2382745A1 (en) | 1977-01-26 | 1978-06-08 | MEMORY CELL |
FR7817175A Granted FR2382770A1 (en) | 1977-01-26 | 1978-06-08 | PROCESS FOR FORMING VERY SMALL CONTACT OPENINGS IN AN INTEGRATED CIRCUIT DEVICE |
FR7817173A Granted FR2382769A1 (en) | 1977-01-26 | 1978-06-08 | METHOD FOR MANUFACTURING HIGH DEFINITION POLYCRYSTALLINE SILICON LAYERS |
FR7817174A Granted FR2382767A1 (en) | 1977-01-26 | 1978-06-08 | SEMICONDUCTOR DEVICE MANUFACTURING PROCESS |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7802068A Granted FR2382768A1 (en) | 1977-01-26 | 1978-01-25 | METHOD FOR PREPARING A SUBSTRATE SURFACE OF AN ISOPLANAR SEMICONDUCTOR DEVICE |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7817175A Granted FR2382770A1 (en) | 1977-01-26 | 1978-06-08 | PROCESS FOR FORMING VERY SMALL CONTACT OPENINGS IN AN INTEGRATED CIRCUIT DEVICE |
FR7817173A Granted FR2382769A1 (en) | 1977-01-26 | 1978-06-08 | METHOD FOR MANUFACTURING HIGH DEFINITION POLYCRYSTALLINE SILICON LAYERS |
FR7817174A Granted FR2382767A1 (en) | 1977-01-26 | 1978-06-08 | SEMICONDUCTOR DEVICE MANUFACTURING PROCESS |
Country Status (5)
Country | Link |
---|---|
JP (10) | JPS5394190A (en) |
DE (1) | DE2802048A1 (en) |
FR (5) | FR2382768A1 (en) |
GB (5) | GB1595547A (en) |
IT (1) | IT1089299B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1089299B (en) * | 1977-01-26 | 1985-06-18 | Mostek Corp | PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE |
JPS5713772A (en) * | 1980-06-30 | 1982-01-23 | Hitachi Ltd | Semiconductor device and manufacture thereof |
DE19521006C2 (en) | 1994-06-08 | 2000-02-17 | Hyundai Electronics Ind | Semiconductor component and method for its production |
US9954176B1 (en) | 2016-10-06 | 2018-04-24 | International Business Machines Corporation | Dielectric treatments for carbon nanotube devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2310609A1 (en) * | 1975-05-05 | 1976-12-03 | Intel Corp | CELL AND PAIR OF MEMORY CELLS WITH DIRECT CONTACTLESS ACCESS |
US3996658A (en) * | 1975-03-31 | 1976-12-14 | Fujitsu Ltd. | Process for producing semiconductor memory device |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1053069A (en) * | 1963-06-28 | |||
GB1175392A (en) * | 1966-09-14 | 1969-12-23 | Hitachi Ltd | Method of Treating Protective Coatings for Semiconductor Devices |
US3590477A (en) | 1968-12-19 | 1971-07-06 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characeristics |
NL7005296A (en) * | 1969-04-15 | 1970-10-19 | ||
US3825997A (en) * | 1969-10-02 | 1974-07-30 | Sony Corp | Method for making semiconductor device |
DE2040180B2 (en) | 1970-01-22 | 1977-08-25 | Intel Corp, Mountain View, Calif. (V.St.A.) | METHOD FOR PREVENTING MECHANICAL BREAKAGE OF A THIN ELECTRICALLY CONDUCTIVE LAYER COVERING THE SURFACE OF A SEMICONDUCTOR BODY |
NL7109327A (en) * | 1970-07-10 | 1972-01-12 | ||
US3811974A (en) * | 1971-07-19 | 1974-05-21 | North American Rockwell | Silicon nitride-silicon oxide etchant |
JPS5112507B2 (en) | 1971-10-22 | 1976-04-20 | ||
JPS5139835B2 (en) * | 1971-12-27 | 1976-10-29 | ||
DE2218035A1 (en) * | 1972-04-14 | 1973-10-31 | Vepa Ag | METHOD AND DEVICE FOR CONTINUOUS FIXING AND SHRINKING OF SYNTHESIS FIBERS |
DE2320195A1 (en) | 1972-04-24 | 1973-12-13 | Standard Microsyst Smc | STORAGE FIELD EFFECT TRANSISTOR WITH SILICON BASE MANUFACTURED BY ION IMPLANTATION |
US3810795A (en) * | 1972-06-30 | 1974-05-14 | Ibm | Method for making self-aligning structure for charge-coupled and bucket brigade devices |
JPS5910073B2 (en) * | 1972-10-27 | 1984-03-06 | 株式会社日立製作所 | Method for manufacturing silicon gate MOS type semiconductor device |
US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
JPS50123274A (en) * | 1974-03-15 | 1975-09-27 | ||
JPS5912495B2 (en) | 1974-10-01 | 1984-03-23 | カブシキガイシヤ ニツポンジドウシヤブヒンソウゴウケンキユウシヨ | Collision detection device |
US3984822A (en) * | 1974-12-30 | 1976-10-05 | Intel Corporation | Double polycrystalline silicon gate memory device |
JPS51118392A (en) | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Manuforcturing process for semiconductor unit |
JPS51118393A (en) * | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Semicondector unit |
US4002511A (en) * | 1975-04-16 | 1977-01-11 | Ibm Corporation | Method for forming masks comprising silicon nitride and novel mask structures produced thereby |
JPS51142982A (en) * | 1975-05-05 | 1976-12-08 | Intel Corp | Method of producing single crystal silicon ic |
JPS51139263A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of selective oxidation of silicon substrate |
NL7506594A (en) * | 1975-06-04 | 1976-12-07 | Philips Nv | PROCEDURE FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED USING THE PROCESS. |
IT1061530B (en) * | 1975-06-12 | 1983-04-30 | Ncr Co | METHOD FOR THE FORMATION OF ELECTRICAL CONNECTIONS IN SELECTED REGIONS OF A SURFACE OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
DE2532594B2 (en) * | 1975-07-21 | 1980-05-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Semiconductor memory |
GB1540450A (en) | 1975-10-29 | 1979-02-14 | Intel Corp | Self-aligning double polycrystalline silicon etching process |
JPS6034270B2 (en) * | 1976-01-12 | 1985-08-07 | テキサス・インスツルメンツ・インコ−ポレイテツド | Semiconductor memory device and its manufacturing method |
US4240092A (en) | 1976-09-13 | 1980-12-16 | Texas Instruments Incorporated | Random access memory cell with different capacitor and transistor oxide thickness |
US4112575A (en) * | 1976-12-20 | 1978-09-12 | Texas Instruments Incorporated | Fabrication methods for the high capacity ram cell |
IT1089299B (en) * | 1977-01-26 | 1985-06-18 | Mostek Corp | PROCEDURE FOR MANUFACTURING A SEMICONDUCTIVE DEVICE |
FR2584786B1 (en) * | 1985-07-15 | 1989-10-27 | Valeo | ASSEMBLY OF THE RELEASE STOPPER AND RELEASE STOPPER SPECIFIC TO SUCH AN ASSEMBLY |
-
1977
- 1977-12-30 IT IT31506/77A patent/IT1089299B/en active
-
1978
- 1978-01-18 DE DE19782802048 patent/DE2802048A1/en active Granted
- 1978-01-25 GB GB32525/79A patent/GB1595547A/en not_active Expired
- 1978-01-25 GB GB3022/78A patent/GB1595543A/en not_active Expired
- 1978-01-25 GB GB32523/79A patent/GB1595545A/en not_active Expired
- 1978-01-25 GB GB19043/80A patent/GB1595548A/en not_active Expired
- 1978-01-25 FR FR7802068A patent/FR2382768A1/en active Granted
- 1978-01-25 GB GB32524/79A patent/GB1595546A/en not_active Expired
- 1978-01-26 JP JP679578A patent/JPS5394190A/en active Pending
- 1978-06-08 FR FR7817176A patent/FR2382745A1/en active Granted
- 1978-06-08 FR FR7817175A patent/FR2382770A1/en active Granted
- 1978-06-08 FR FR7817173A patent/FR2382769A1/en active Granted
- 1978-06-08 FR FR7817174A patent/FR2382767A1/en active Granted
-
1981
- 1981-08-07 JP JP56123141A patent/JPS5760852A/en active Pending
-
1987
- 1987-01-29 JP JP62017431A patent/JPS62290181A/en active Pending
- 1987-01-29 JP JP62017429A patent/JPS62290180A/en active Pending
- 1987-01-29 JP JP62017430A patent/JPS62290152A/en active Granted
- 1987-01-29 JP JP62017428A patent/JPS62290147A/en active Pending
-
1991
- 1991-08-19 JP JP1991065301U patent/JPH04107840U/en active Pending
-
1995
- 1995-10-09 JP JP7261450A patent/JPH0918003A/en active Pending
- 1995-10-09 JP JP7261151A patent/JPH098299A/en active Pending
- 1995-10-09 JP JP7261375A patent/JP2720911B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3996658A (en) * | 1975-03-31 | 1976-12-14 | Fujitsu Ltd. | Process for producing semiconductor memory device |
FR2310609A1 (en) * | 1975-05-05 | 1976-12-03 | Intel Corp | CELL AND PAIR OF MEMORY CELLS WITH DIRECT CONTACTLESS ACCESS |
Non-Patent Citations (1)
Title |
---|
EXBK/76 * |
Also Published As
Publication number | Publication date |
---|---|
JPS62290180A (en) | 1987-12-17 |
JPH0917799A (en) | 1997-01-17 |
GB1595543A (en) | 1981-08-12 |
FR2382769A1 (en) | 1978-09-29 |
JPH098299A (en) | 1997-01-10 |
GB1595546A (en) | 1981-08-12 |
FR2382768A1 (en) | 1978-09-29 |
FR2382745B1 (en) | 1983-06-03 |
JPS5760852A (en) | 1982-04-13 |
FR2382770A1 (en) | 1978-09-29 |
FR2382767B1 (en) | 1983-06-03 |
JPH0918003A (en) | 1997-01-17 |
JPS62290147A (en) | 1987-12-17 |
FR2382769B1 (en) | 1983-06-03 |
JPS62290152A (en) | 1987-12-17 |
GB1595545A (en) | 1981-08-12 |
GB1595547A (en) | 1981-08-12 |
JP2720911B2 (en) | 1998-03-04 |
JPH04107840U (en) | 1992-09-17 |
FR2382768B1 (en) | 1983-06-10 |
DE2802048A1 (en) | 1978-07-27 |
GB1595548A (en) | 1981-08-12 |
FR2382767A1 (en) | 1978-09-29 |
FR2382770B1 (en) | 1983-06-03 |
IT1089299B (en) | 1985-06-18 |
JPS5394190A (en) | 1978-08-17 |
JPS62290181A (en) | 1987-12-17 |
JPH0362300B2 (en) | 1991-09-25 |
DE2802048C2 (en) | 1993-02-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address | ||
CD | Change of name or company name | ||
TP | Transmission of property |