FR2374743A1 - Transistor multicouche a emetteur compose - Google Patents

Transistor multicouche a emetteur compose

Info

Publication number
FR2374743A1
FR2374743A1 FR7638304A FR7638304A FR2374743A1 FR 2374743 A1 FR2374743 A1 FR 2374743A1 FR 7638304 A FR7638304 A FR 7638304A FR 7638304 A FR7638304 A FR 7638304A FR 2374743 A1 FR2374743 A1 FR 2374743A1
Authority
FR
France
Prior art keywords
emitter
layer transistor
surface region
compound emitter
doped layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7638304A
Other languages
English (en)
Other versions
FR2374743B1 (fr
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7638304A priority Critical patent/FR2374743A1/fr
Priority to DE19772754413 priority patent/DE2754413A1/de
Priority to US05/859,601 priority patent/US4151541A/en
Priority to NL7713948A priority patent/NL7713948A/xx
Priority to GB52440/77A priority patent/GB1547126A/en
Priority to CA293,395A priority patent/CA1091362A/fr
Priority to JP15248177A priority patent/JPS5386582A/ja
Publication of FR2374743A1 publication Critical patent/FR2374743A1/fr
Application granted granted Critical
Publication of FR2374743B1 publication Critical patent/FR2374743B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

Transistor épitaxial multicouche dont l'émetteur est formé d'une portion de couche faiblement dopée et d'une région superficielle fortement dopée. La région superficielle d'émetteur est en forme de bande, à distance de la zone de contact de base et de l'axe de la portion de couche faiblement dopée. Protection de transistors de commutation vis-à-vis du second claquage.
FR7638304A 1976-12-20 1976-12-20 Transistor multicouche a emetteur compose Granted FR2374743A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR7638304A FR2374743A1 (fr) 1976-12-20 1976-12-20 Transistor multicouche a emetteur compose
DE19772754413 DE2754413A1 (de) 1976-12-20 1977-12-07 Leistungstransistor
US05/859,601 US4151541A (en) 1976-12-20 1977-12-12 Power transistor
NL7713948A NL7713948A (nl) 1976-12-20 1977-12-16 Vermogenstransistor.
GB52440/77A GB1547126A (en) 1976-12-20 1977-12-16 Transistors
CA293,395A CA1091362A (fr) 1976-12-20 1977-12-19 Transistor de puissance
JP15248177A JPS5386582A (en) 1976-12-20 1977-12-20 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7638304A FR2374743A1 (fr) 1976-12-20 1976-12-20 Transistor multicouche a emetteur compose

Publications (2)

Publication Number Publication Date
FR2374743A1 true FR2374743A1 (fr) 1978-07-13
FR2374743B1 FR2374743B1 (fr) 1980-03-07

Family

ID=9181256

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638304A Granted FR2374743A1 (fr) 1976-12-20 1976-12-20 Transistor multicouche a emetteur compose

Country Status (7)

Country Link
US (1) US4151541A (fr)
JP (1) JPS5386582A (fr)
CA (1) CA1091362A (fr)
DE (1) DE2754413A1 (fr)
FR (1) FR2374743A1 (fr)
GB (1) GB1547126A (fr)
NL (1) NL7713948A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438341A1 (fr) * 1978-07-20 1980-04-30 Gen Electric Transistor de commutation perfectionne
EP0019355A1 (fr) * 1979-04-11 1980-11-26 Fujitsu Limited Structure de transistor
EP0064614A2 (fr) * 1981-04-30 1982-11-17 Kabushiki Kaisha Toshiba Structure d'émetteur pour dispositifs semiconducteurs
EP0096625A1 (fr) * 1982-06-08 1983-12-21 Thomson-Csf Structure de doigt d'émetteur dans un transistor de commutation et procédé de fabrication

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
WO1982001619A1 (fr) * 1980-10-28 1982-05-13 Aircraft Co Hughes Procede de fabrication d'un transistor bipolaire iii-v par implantation selective d'ions et dispositif obtenu selon ce procede
US4388634A (en) * 1980-12-04 1983-06-14 Rca Corporation Transistor with improved second breakdown capability
JPS5850776A (ja) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp ゲ−ト・タ−ンオフサイリスタ
US4566176A (en) * 1984-05-23 1986-01-28 U.S. Philips Corporation Method of manufacturing transistors
JPS6473669A (en) * 1987-09-14 1989-03-17 Fujitsu Ltd Semiconductor integrated circuit
AU1912595A (en) * 1994-02-03 1995-08-21 Cambridge Neuroscience, Inc. Therapeutic guanidines
US7836620B2 (en) * 2008-07-21 2010-11-23 Andrews McMeel Publishing, LLC Animated media and methods of construction

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141506B2 (fr) * 1971-08-12 1976-11-10
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current
JPS50137478A (fr) * 1974-04-18 1975-10-31
JPS51128269A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2438341A1 (fr) * 1978-07-20 1980-04-30 Gen Electric Transistor de commutation perfectionne
EP0019355A1 (fr) * 1979-04-11 1980-11-26 Fujitsu Limited Structure de transistor
EP0064614A2 (fr) * 1981-04-30 1982-11-17 Kabushiki Kaisha Toshiba Structure d'émetteur pour dispositifs semiconducteurs
EP0064614A3 (en) * 1981-04-30 1984-11-07 Kabushiki Kaisha Toshiba Improved emitter structure for semiconductor devices
EP0096625A1 (fr) * 1982-06-08 1983-12-21 Thomson-Csf Structure de doigt d'émetteur dans un transistor de commutation et procédé de fabrication
US4609414A (en) * 1982-06-08 1986-09-02 Thomson-Csf Emitter finger structure in a switching transistor

Also Published As

Publication number Publication date
JPS5386582A (en) 1978-07-31
FR2374743B1 (fr) 1980-03-07
GB1547126A (en) 1979-06-06
NL7713948A (nl) 1978-06-22
DE2754413A1 (de) 1978-06-22
CA1091362A (fr) 1980-12-09
US4151541A (en) 1979-04-24

Similar Documents

Publication Publication Date Title
FR2374743A1 (fr) Transistor multicouche a emetteur compose
KR860002153A (ko) 반도체 장치
ATE225568T1 (de) Leistung-mosfet aus siliziumkarbid
KR840001392A (ko) 절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor)
JPS57141962A (en) Semiconductor integrated circuit device
KR910003816A (ko) 반도체기억장치의 셀구조
SE8009091L (sv) Halvledaranordning
ATE287127T1 (de) Struktur zur erhöhung der maximalen spannung von siliziumkarbid-leistungstransistoren
SE8007199L (sv) Zener-diod
ATE501526T1 (de) Bipolarer transistor
KR960002880A (ko) 실리콘 온 인슐레이터(soi) 트랜지스터
KR900002462A (ko) 반도체 장치
KR920001749A (ko) 개량된 절연게이트형 트랜지스터를 갖는 반도체장치
KR920005380A (ko) 화합물반도체 장치
KR960019766A (ko) 에스오아이(soi) 기판상의 모스페트(mosfet)
JPS5623780A (en) Manufacture of thin film transistor
KR930018757A (ko) 화합물 반도체장치
KR840005929A (ko) Mos 트랜지스터 집적회로
KR860001488A (ko) 바이폴러 트랜지스터와 iil이 있는 반도체 장치
KR910013565A (ko) 래터럴형 반도체장치
FR2363897A1 (fr) Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions
KR900005561A (ko) 반도체장치
EP0335632A3 (fr) Transistor en couche mince à fort courant
KR970008640A (ko) 반도체 장치
KR920005391A (ko) 바이폴라 트랜지스터 · 절연 게이트형 트랜지스터 혼재 반도체장치

Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse