FR2332802A1 - Procede pour deposer du nitrure de silicium sous vide - Google Patents

Procede pour deposer du nitrure de silicium sous vide

Info

Publication number
FR2332802A1
FR2332802A1 FR7635591A FR7635591A FR2332802A1 FR 2332802 A1 FR2332802 A1 FR 2332802A1 FR 7635591 A FR7635591 A FR 7635591A FR 7635591 A FR7635591 A FR 7635591A FR 2332802 A1 FR2332802 A1 FR 2332802A1
Authority
FR
France
Prior art keywords
silicon nitride
under vacuum
depositing silicon
nitride under
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7635591A
Other languages
English (en)
Other versions
FR2332802B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2332802A1 publication Critical patent/FR2332802A1/fr
Application granted granted Critical
Publication of FR2332802B1 publication Critical patent/FR2332802B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR7635591A 1975-11-25 1976-11-25 Procede pour deposer du nitrure de silicium sous vide Granted FR2332802A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63501275A 1975-11-25 1975-11-25

Publications (2)

Publication Number Publication Date
FR2332802A1 true FR2332802A1 (fr) 1977-06-24
FR2332802B1 FR2332802B1 (fr) 1981-12-24

Family

ID=24546063

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635591A Granted FR2332802A1 (fr) 1975-11-25 1976-11-25 Procede pour deposer du nitrure de silicium sous vide

Country Status (5)

Country Link
JP (1) JPS6010108B2 (fr)
DE (1) DE2652449C2 (fr)
FR (1) FR2332802A1 (fr)
GB (1) GB1518564A (fr)
HK (1) HK881A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118848C2 (de) * 1980-05-12 1983-05-19 Mitsubishi Denki K.K., Tokyo Niederdruck-Beschichtungsvorrichtung
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JPH0248706U (fr) * 1988-09-27 1990-04-04
FR2759362B1 (fr) * 1997-02-10 1999-03-12 Saint Gobain Vitrage Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
JP2004071970A (ja) * 2002-08-08 2004-03-04 Shin Etsu Chem Co Ltd 太陽電池用シリコン基板の製造方法およびその製造システム
CN115142048B (zh) * 2022-06-30 2023-07-07 北海惠科半导体科技有限公司 晶圆载具及氮化硅介质膜的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1521174A (fr) * 1966-05-02 1968-04-12 Siemens Ag Procédé pour réaliser une couche protectrice, notamment sur la surface d'un cristal semi-conducteur
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251287C2 (de) * 1962-09-10 1975-10-09 United Aircraft Corporation, East Hartford, Conn. (V.St.A.) Verfahren zur herstellung von nichtporoesem siliciumnitrid
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1521174A (fr) * 1966-05-02 1968-04-12 Siemens Ag Procédé pour réaliser une couche protectrice, notamment sur la surface d'un cristal semi-conducteur
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate

Also Published As

Publication number Publication date
FR2332802B1 (fr) 1981-12-24
GB1518564A (en) 1978-07-19
HK881A (en) 1981-01-23
JPS6010108B2 (ja) 1985-03-15
JPS5265199A (en) 1977-05-30
DE2652449A1 (de) 1977-05-26
DE2652449C2 (de) 1982-06-09

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