FR2317767A2 - Applications d'un procede de diffusion profonde d'impuretes dans un substrat - Google Patents

Applications d'un procede de diffusion profonde d'impuretes dans un substrat

Info

Publication number
FR2317767A2
FR2317767A2 FR7521766A FR7521766A FR2317767A2 FR 2317767 A2 FR2317767 A2 FR 2317767A2 FR 7521766 A FR7521766 A FR 7521766A FR 7521766 A FR7521766 A FR 7521766A FR 2317767 A2 FR2317767 A2 FR 2317767A2
Authority
FR
France
Prior art keywords
diode
substrate
thyristor
transistor
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7521766A
Other languages
English (en)
Other versions
FR2317767B2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7521766A priority Critical patent/FR2317767A2/fr
Publication of FR2317767A2 publication Critical patent/FR2317767A2/fr
Application granted granted Critical
Publication of FR2317767B2 publication Critical patent/FR2317767B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66393—Lateral or planar thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66098—Breakdown diodes
    • H01L29/66106—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thyristors (AREA)
FR7521766A 1975-07-10 1975-07-10 Applications d'un procede de diffusion profonde d'impuretes dans un substrat Granted FR2317767A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7521766A FR2317767A2 (fr) 1975-07-10 1975-07-10 Applications d'un procede de diffusion profonde d'impuretes dans un substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7521766A FR2317767A2 (fr) 1975-07-10 1975-07-10 Applications d'un procede de diffusion profonde d'impuretes dans un substrat

Publications (2)

Publication Number Publication Date
FR2317767A2 true FR2317767A2 (fr) 1977-02-04
FR2317767B2 FR2317767B2 (fr) 1979-01-05

Family

ID=9157793

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7521766A Granted FR2317767A2 (fr) 1975-07-10 1975-07-10 Applications d'un procede de diffusion profonde d'impuretes dans un substrat

Country Status (1)

Country Link
FR (1) FR2317767A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3053198A1 (fr) * 2013-10-01 2016-08-10 Vishay General Semiconductor LLC Diode zener munie d'une couche en silicium polycristallin pour une capacité améliorée de tenue aux transitoires inverses et un courant de fuite réduit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3053198A1 (fr) * 2013-10-01 2016-08-10 Vishay General Semiconductor LLC Diode zener munie d'une couche en silicium polycristallin pour une capacité améliorée de tenue aux transitoires inverses et un courant de fuite réduit
EP3053198A4 (fr) * 2013-10-01 2017-05-03 Vishay General Semiconductor LLC Diode zener munie d'une couche en silicium polycristallin pour une capacité améliorée de tenue aux transitoires inverses et un courant de fuite réduit

Also Published As

Publication number Publication date
FR2317767B2 (fr) 1979-01-05

Similar Documents

Publication Publication Date Title
EP0322921A3 (fr) Méthode de formation de jonctions peu profondes et dispositif semi-conducteur ayant des jonctions peu profondes
JPS5555559A (en) Method of fabricating semiconductor device
FR2317767A2 (fr) Applications d'un procede de diffusion profonde d'impuretes dans un substrat
JPS5378183A (en) Manufacture of semiconductor device
GB1361303A (en) Manufacture of semiconductor devices
JPS57211734A (en) Manufacture of semiconductor device
JPS55124238A (en) Method of fabricating semiconductor device
JPS52129276A (en) Production of semiconductor device
JPS54153583A (en) Semiconductor device
JPS5544701A (en) Manufacturing transistor
JPS5637663A (en) Capacitor
JPS568849A (en) Manufacture of semiconductor integrated circuit
JPS5544741A (en) Manufacture of semiconductor device
JPS5658248A (en) Production of semiconductor device
JPS5492180A (en) Manufacture of semiconductor device
JPS54155784A (en) Manufacture of semiconductor integrated-circuit device
JPS5749222A (en) Manufacture of semiconductor device
JPS56140645A (en) Manufacture of semiconductor device
FR2317768A1 (fr) Nouvelle diode et son procede de fabrication
FR2068670A1 (fr) Corps semi-conducteurs a conductivites multiples et a substrat unique et procedes pour leur fabrication
JPS5678168A (en) Manufacture of semiconductor device
FR2301921A1 (fr) Nouvelles diodes zener alliees a anneau de garde diffuse et leur procede de fabrication
JPS55146970A (en) Manufacture of transistor
JPS57134939A (en) Semiconductor device
JPS5244583A (en) Method of treating semiconductor sustrate