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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP12098975ApriorityCriticalpatent/JPS5244583A/en
Publication of JPS5244583ApublicationCriticalpatent/JPS5244583A/en
PURPOSE: To form an Si epitaxial layer on an Si surface partially deposited with an Si2N3 film and form grooves in the substrate beneath film end by removing the Si epitaxial layer through etching, thereby making the surface of an oxide film to be formed next flat.
COPYRIGHT: (C)1977,JPO&Japio
JP12098975A1975-10-061975-10-06Method of treating semiconductor sustrate
PendingJPS5244583A
(en)