JPS5244583A - Method of treating semiconductor sustrate - Google Patents
Method of treating semiconductor sustrateInfo
- Publication number
- JPS5244583A JPS5244583A JP12098975A JP12098975A JPS5244583A JP S5244583 A JPS5244583 A JP S5244583A JP 12098975 A JP12098975 A JP 12098975A JP 12098975 A JP12098975 A JP 12098975A JP S5244583 A JPS5244583 A JP S5244583A
- Authority
- JP
- Japan
- Prior art keywords
- sustrate
- treating semiconductor
- film
- epitaxial layer
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To form an Si epitaxial layer on an Si surface partially deposited with an Si2N3 film and form grooves in the substrate beneath film end by removing the Si epitaxial layer through etching, thereby making the surface of an oxide film to be formed next flat.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12098975A JPS5244583A (en) | 1975-10-06 | 1975-10-06 | Method of treating semiconductor sustrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12098975A JPS5244583A (en) | 1975-10-06 | 1975-10-06 | Method of treating semiconductor sustrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5244583A true JPS5244583A (en) | 1977-04-07 |
Family
ID=14800016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12098975A Pending JPS5244583A (en) | 1975-10-06 | 1975-10-06 | Method of treating semiconductor sustrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5244583A (en) |
-
1975
- 1975-10-06 JP JP12098975A patent/JPS5244583A/en active Pending
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