FR2068670A1 - Corps semi-conducteurs a conductivites multiples et a substrat unique et procedes pour leur fabrication - Google Patents

Corps semi-conducteurs a conductivites multiples et a substrat unique et procedes pour leur fabrication

Info

Publication number
FR2068670A1
FR2068670A1 FR7042563A FR7042563A FR2068670A1 FR 2068670 A1 FR2068670 A1 FR 2068670A1 FR 7042563 A FR7042563 A FR 7042563A FR 7042563 A FR7042563 A FR 7042563A FR 2068670 A1 FR2068670 A1 FR 2068670A1
Authority
FR
France
Prior art keywords
oxide layer
substrate
cavity
layer
prodn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7042563A
Other languages
English (en)
Inventor
Stein Leonard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2068670A1 publication Critical patent/FR2068670A1/fr
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
FR7042563A 1969-11-26 1970-11-26 Corps semi-conducteurs a conductivites multiples et a substrat unique et procedes pour leur fabrication Pending FR2068670A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88020369A 1969-11-26 1969-11-26

Publications (1)

Publication Number Publication Date
FR2068670A1 true FR2068670A1 (fr) 1971-08-27

Family

ID=25375718

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7042563A Pending FR2068670A1 (fr) 1969-11-26 1970-11-26 Corps semi-conducteurs a conductivites multiples et a substrat unique et procedes pour leur fabrication

Country Status (3)

Country Link
DE (1) DE2057895A1 (fr)
FR (1) FR2068670A1 (fr)
NL (1) NL7017085A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2194048A1 (fr) * 1972-07-26 1974-02-22 Texas Instruments Inc
FR2465316A1 (fr) * 1979-09-17 1981-03-20 Nippon Telegraph & Telephone Dispositifs semi-conducteurs pourvus d'elements semi-conducteurs complementaires et procede de fabrication d'un dispositif semi-conducteur compose

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2194048A1 (fr) * 1972-07-26 1974-02-22 Texas Instruments Inc
FR2465316A1 (fr) * 1979-09-17 1981-03-20 Nippon Telegraph & Telephone Dispositifs semi-conducteurs pourvus d'elements semi-conducteurs complementaires et procede de fabrication d'un dispositif semi-conducteur compose

Also Published As

Publication number Publication date
NL7017085A (fr) 1971-05-28
DE2057895A1 (de) 1971-06-24

Similar Documents

Publication Publication Date Title
BE788374A (fr) Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
ES351652A1 (es) Un dispositivo semiconductor integrado.
GB1263617A (en) Semiconductor devices and methods of making the same
GB1379414A (en) Forming an epitaxial layer on a semiconductor substrate
CA968674A (en) Method of depositing an epitaxial semiconductor layer from the liquid phase
ES442102A1 (es) Un dispositivo semiconductor.
GB1338358A (en) Semiconductor devices
GB1317014A (en) Contact system for semiconductor devices
GB988903A (en) Semiconductor devices and methods of making same
JPS5334484A (en) Forming method for multi layer wiring
GB1230686A (fr)
GB1130718A (en) Improvements in or relating to the epitaxial deposition of a semiconductor material
GB1154607A (en) Multiple Semiconductor Device.
GB1501483A (en) Semiconductor device
FR2068670A1 (fr) Corps semi-conducteurs a conductivites multiples et a substrat unique et procedes pour leur fabrication
GB1190992A (en) Improved method of Depositing Semiconductor Material
GB1066911A (en) Semiconductor devices
JPS6450439A (en) Manufacture of semiconductor device
GB1285917A (en) Semiconductor device fabrication
GB1126338A (en) A method of producing semiconductor bodies with an extremely low-resistance substrate
CA966040A (en) Method of forming an epitaxial semiconductor layer with smooth surface
GB1173912A (en) Improvements in or relating to Semiconductor Devices
GB1061060A (en) Semiconductor structure and method
FR2183709A1 (en) Semiconductor resistance - in epitaxial layer buried below insulating layer, for high element density
GB1362512A (en) Semiconductor device and method for manufacture